公开(公告)号：US20240145547A1

公开(公告)日：2024-05-02

申请号：US18409045

申请日：2024-01-10

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Yuniarto Widjaja ,  Zvi Or-Bach ,  Dinesh Maheshwari

IPC: H01L29/10 ,  G11C11/404 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L21/761 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H01L27/12 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H10B63/00

CPC classification number: H01L29/1087 ,  G11C11/404 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L21/761 ,  H01L21/823892 ,  H01L27/0218 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42356 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H10B63/30 ,  G11C13/004

Abstract: A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

公开(公告)号：US20230035384A1

公开(公告)日：2023-02-02

申请号：US17963024

申请日：2022-10-10

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Dinesh Maheshwari ,  Yuniarto Widjaja

IPC: H01L29/78 ,  H01L27/12 ,  H01L27/108

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

公开(公告)号：US11489073B2

公开(公告)日：2022-11-01

申请号：US17092659

申请日：2020-11-09

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Dinesh Maheshwari ,  Yuniarto Widjaja

IPC: H01L29/78 ,  H01L27/12 ,  H01L27/108 ,  G11C29/12 ,  G11C11/408 ,  G11C11/4096 ,  G06F11/10 ,  G11C29/52 ,  G11C7/02

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

公开(公告)号：US20200083373A1

公开(公告)日：2020-03-12

申请号：US16682259

申请日：2019-11-13

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Dinesh Maheshwari ,  Yuniarto Widjaja

IPC: H01L29/78 ,  H01L27/108 ,  H01L27/12

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

公开(公告)号：US10529853B2

公开(公告)日：2020-01-07

申请号：US16105579

申请日：2018-08-20

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Dinesh Maheshwari ,  Yuniarto Widjaja

IPC: H01L29/78 ,  H01L27/108 ,  H01L27/12 ,  G11C29/12 ,  G11C11/408 ,  G11C11/4096 ,  G06F11/10 ,  G11C29/52 ,  G11C7/02

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

公开(公告)号：US11769832B2

公开(公告)日：2023-09-26

申请号：US17963024

申请日：2022-10-10

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Dinesh Maheshwari ,  Yuniarto Widjaja

IPC: H01L29/78 ,  H01L27/12 ,  H10B12/00 ,  G11C29/12 ,  G11C11/408 ,  G11C11/4096 ,  G06F11/10 ,  G11C29/52 ,  G11C7/02

CPC classification number: H01L29/7841 ,  H01L27/1211 ,  H10B12/20 ,  G06F11/1068 ,  G11C7/02 ,  G11C11/4082 ,  G11C11/4087 ,  G11C11/4096 ,  G11C29/12 ,  G11C29/52 ,  H01L29/785

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

公开(公告)号：US10553683B2

公开(公告)日：2020-02-04

申请号：US15724989

申请日：2016-04-27

Applicant: Jin-Woo Han ,  Yuniarto Widjaja ,  Zvi Or-Bach ,  Dinesh Maheshwari ,  Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Yuniarto Widjaja ,  Zvi Or-Bach ,  Dinesh Maheshwari

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L27/02 ,  H01L27/092 ,  G11C16/10 ,  G11C16/26 ,  H01L27/24 ,  H01L27/12 ,  H01L29/788 ,  H01L29/792 ,  H01L29/32 ,  H01L21/265 ,  H03K19/20 ,  H03K19/21 ,  H01L29/06 ,  H03K19/0948 ,  G11C16/04 ,  G11C13/00

Abstract: A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

公开(公告)号：US20240347634A1

公开(公告)日：2024-10-17

申请号：US18752060

申请日：2024-06-24

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Dinesh Maheshwari ,  Yuniarto Widjaja

IPC: H01L29/78 ,  G06F11/10 ,  G11C7/02 ,  G11C11/408 ,  G11C11/4096 ,  G11C29/12 ,  G11C29/52 ,  H01L27/12 ,  H10B12/00

CPC classification number: H01L29/7841 ,  H01L27/1211 ,  H10B12/20 ,  G06F11/1068 ,  G11C7/02 ,  G11C11/4082 ,  G11C11/4087 ,  G11C11/4096 ,  G11C29/12 ,  G11C29/52 ,  H01L29/785

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

公开(公告)号：US11908899B2

公开(公告)日：2024-02-20

申请号：US17535473

申请日：2021-11-24

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Yuniarto Widjaja ,  Zvi Or-Bach ,  Dinesh Maheshwari

IPC: H01L29/10 ,  H01L21/8238 ,  H01L29/786 ,  H10B63/00 ,  G11C13/00 ,  G11C11/404 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L21/761 ,  H01L27/02 ,  H01L27/092 ,  H01L27/12 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L21/265 ,  H01L29/06 ,  H01L29/32 ,  H01L29/788 ,  H01L29/792 ,  H03K19/0948 ,  H03K19/20 ,  H03K19/21

CPC classification number: H01L29/1087 ,  G11C11/404 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L21/761 ,  H01L21/823892 ,  H01L27/0218 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42356 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H10B63/30 ,  G11C13/004 ,  G11C13/0069 ,  G11C16/0408 ,  G11C16/0466 ,  G11C2213/79 ,  H01L21/26513 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/4238 ,  H01L29/42328 ,  H01L29/42344 ,  H01L29/7881 ,  H01L29/792 ,  H03K19/0948 ,  H03K19/20 ,  H03K19/21

Abstract: A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

公开(公告)号：US10079301B2

公开(公告)日：2018-09-18

申请号：US15798342

申请日：2017-10-30

Applicant: Zeno Semiconductor, Inc.

Inventor： Jin-Woo Han ,  Dinesh Maheshwari ,  Yuniarto Widjaja

IPC: H01L29/78 ,  H01L27/108 ,  H01L27/12 ,  G11C29/12 ,  G11C11/408 ,  G11C11/4096 ,  G06F11/10 ,  G11C29/52

CPC classification number: H01L29/7841 ,  G06F11/1068 ,  G11C7/02 ,  G11C11/4082 ,  G11C11/4087 ,  G11C11/4096 ,  G11C29/12 ,  G11C29/52 ,  H01L27/10802 ,  H01L27/1211 ,  H01L29/785

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.