Invention Publication
- Patent Title: MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application
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Application No.: US18409045Application Date: 2024-01-10
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Publication No.: US20240145547A1Publication Date: 2024-05-02
- Inventor: Jin-Woo Han , Yuniarto Widjaja , Zvi Or-Bach , Dinesh Maheshwari
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- The original application number of the division: US16714443 2019.12.13
- Main IPC: H01L29/10
- IPC: H01L29/10 ; G11C11/404 ; G11C16/04 ; G11C16/10 ; G11C16/26 ; H01L21/761 ; H01L21/8238 ; H01L27/02 ; H01L27/092 ; H01L27/12 ; H01L29/08 ; H01L29/423 ; H01L29/78 ; H01L29/786 ; H10B63/00
Abstract:
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.
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