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公开(公告)号:US20240162256A1
公开(公告)日:2024-05-16
申请号:US18344398
申请日:2023-06-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoungeun Chang , Sungin Kim , Jameyung Kim , Incheol Cho
IPC: H01L27/146 , H01L29/10 , H01L29/423
CPC classification number: H01L27/14614 , H01L29/1033 , H01L29/4236 , H01L29/42376 , H01L29/4238
Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, and a gate electrode on the active region, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, wherein the gate electrode includes a lateral gate portion on a portion of the top surface of the active region, a vertical gate portion on a sidewall of the active region, and a round inner corner portion integrally connected to the lateral gate portion and the vertical gate portion, the round inner corner portion facing the local round edge portion.
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公开(公告)号:US20240355841A1
公开(公告)日:2024-10-24
申请号:US18761524
申请日:2024-07-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoungeun Chang , Sungin Kim , Jameyung Kim , Incheol Cho
IPC: H01L27/146
CPC classification number: H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14643
Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, a gate electrode on the active region, and a source region and a drain region formed in the active region on both sides of the gate electrode, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, and a distance from the local round edge portion to the drain region is less than a distance from the local round edge portion to the source region, wherein the gate electrode includes a round inner corner portion facing the local round edge portion.
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公开(公告)号:US20230352510A1
公开(公告)日:2023-11-02
申请号:US18164228
申请日:2023-02-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Junghye Kim , Donghyun Kim , Sung In Kim , Kyoungeun Chang , Jae Ho Kim
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14607 , H01L27/14621 , H01L27/14627 , H01L27/14645
Abstract: An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first pixel, a first source follower gate electrode on the first pixel and adjacent to the first sidewall and the second sidewall, a first impurity region adjacent to a first corner where the first sidewall and the second sidewall meet, a second impurity region adjacent to a second corner where the second sidewall and the third sidewall meet, and a third impurity region adjacent to a third corner where the first sidewall and the fourth sidewall meet. The first to third impurity regions are adjacent to the first source follower gate electrode. The second impurity region and the third impurity region are electrically connected to each other.
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公开(公告)号:US20220392930A1
公开(公告)日:2022-12-08
申请号:US17671651
申请日:2022-02-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoungeun Chang , Hyunchul Kim , Jinyoung Kim , Donghyun Kim , Sungin Kim
IPC: H01L27/146
Abstract: An image sensor includes: a substrate having a first surface on which light is incident and a second surface opposite to the first surface; a pixel isolation structure enclosing a pixel region in the substrate; a photoelectric conversion region in the pixel region; and a device isolation layer defining a pattern in the pixel region, wherein the device isolation layer includes a first portion contacting the pixel isolation structure and a second portion spaced apart from the pixel isolation structure, the device isolation layer extends from a second surface of the substrate into the substrate, and a length of the second portion of the device isolation layer in a vertical direction perpendicular to the first surface of the substrate is less than a length of the first portion of the device isolation layer in the vertical direction.
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