公开(公告)号：US10043565B2

公开(公告)日：2018-08-07

申请号：US15131881

申请日：2016-04-18

申请人： U.S. Army Research Laboratory ATTN: RDRL-LOC-I

发明人： Glen Richard Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

IPC分类号： H01L21/02 ,  G11C11/22 ,  G11C11/50 ,  G11C23/00 ,  H01L41/09 ,  H01H57/00

摘要： A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

公开(公告)号：US20170076822A1

公开(公告)日：2017-03-16

申请号：US14853044

申请日：2015-09-14

申请人： Elwha LLC

发明人： Kenneth G. Caldeira ,  Peter L. Hagelstein ,  Roderick A. Hyde ,  Muriel Y. Ishikawa ,  Edward K.Y. Jung ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  John Brian Pendry ,  David Schurig ,  Clarence T. Tegreene ,  David B. Tuckerman ,  Thomas Allan Weaver ,  Charles Whitmer ,  Lowell L. Wood,, JR.

IPC分类号： G11C23/00

CPC分类号： G11C23/00 ,  G11C11/21 ,  G11C11/50 ,  H01H57/00

摘要： A digital memory device includes a moveable element that is configured to move between a first stable position and a second stable position, where the moveable element comprises a first conducting area. The digital memory device further includes a second conducting area on the surface of a substrate. At the first stable position of the moveable element, a first gap exists between the first conducting area and the second conducting area. At the second stable position of the moveable element, a second gap that is smaller than the first gap exists between the first conducting area and the second conducting area. In at least the second stable position, an attractive Casimir force between the moveable element and the substrate holds the moveable element in the stable position.

摘要翻译： 数字存储装置包括被配置为在第一稳定位置和第二稳定位置之间移动的可移动元件，其中可移动元件包括第一导电区域。 数字存储器件还包括在衬底的表面上的第二导电区域。 在可移动元件的第一稳定位置处，在第一导电区域和第二导电区域之间存在第一间隙。 在可移动元件的第二稳定位置处，在第一导电区域和第二导电区域之间存在小于第一间隙的第二间隙。 在至少第二稳定位置中，可移动元件和基板之间的有吸引力的卡西米尔力将可移动元件保持在稳定位置。

公开(公告)号：US20160328578A1

公开(公告)日：2016-11-10

申请号：US15109747

申请日：2014-12-23

申请人： STC.UNM ,  CASE WESTERN RESERVE UNIVERSITY

发明人： James Plusquellic ,  Swarup Bhunia

IPC分类号： G06F21/75 ,  G06F21/60 ,  G11C16/26 ,  G11C13/00 ,  G11C23/00 ,  G11C16/10

CPC分类号： G06F21/75 ,  G06F7/588 ,  G06F21/604 ,  G09C1/00 ,  G11C13/004 ,  G11C13/0069 ,  G11C16/10 ,  G11C16/26 ,  G11C23/00 ,  H04L9/0866 ,  H04L2209/12

摘要： This disclosure describes techniques for generating physically unclonable functions (PUF) from non-volatile memory cells. The PUFs leverage resistance variations in non-volatile memory cells. Resistance variations in array of non-volatile memory cells may be produce a bitstring during an enrollment process. The bitstring may be stored in the non-volatile memory array. Regeneration may include retrieving the bitstring from the non-volatile memory array.

摘要翻译： 本公开描述了用于从非易失性存储器单元生成物理不可克隆功能（PUF）的技术。 PUF利用非易失性存储单元中的电阻变化。 非易失性存储器单元阵列中的电阻变化可能在注册过程中产生位串。 位串可以存储在非易失性存储器阵列中。 再生可以包括从非易失性存储器阵列检索位串。

公开(公告)号：US09431100B1

公开(公告)日：2016-08-30

申请号：US14820127

申请日：2015-08-06

申请人： International Business Machines Corporation

发明人： Urs T. Duerig ,  Armin W. Knoll ,  Elad Koren ,  Emanuel Loertscher

IPC分类号： G11C13/00 ,  G11C23/00

CPC分类号： G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C23/00 ,  G11C2013/0045 ,  G11C2213/35 ,  H01L51/0591

摘要： A method for storing or switching. The method comprises: arranging a first layer including a first molecular network having a first 2D lattice structure and a second layer including a second molecular network having a second 2D lattice structure at a distance from each other such that the first and the second molecular network interact electronically via molecular orbital interactions, and rotating the first layer relative to the second layer by a rotation angle with a rotation device, wherein an electrical resistance between the first molecular network and the second molecular network changes as a function of the rotation angle, thereby storing information by switching the electrical resistance.

摘要翻译： 一种存储或切换的方法。 该方法包括：布置包括具有第一2D晶格结构的第一分子网络的第一层和包括具有彼此间隔一定距离的第二2D晶格结构的第二分子网络的第二层，使得第一和第二分子网络相互作用 通过分子轨道相互作用电子地转动，并且使第一层相对于第二层旋转与旋转装置的旋转角度，其中第一分子网络和第二分子网络之间的电阻作为旋转角度的函数而改变，由此存储 信息切换电阻。

公开(公告)号：US09390790B2

公开(公告)日：2016-07-12

申请号：US13716453

申请日：2012-12-17

申请人： Nantero Inc.

发明人： Claude L. Bertin ,  C. Rinn Cleavelin ,  Thomas Rueckes ,  X. M. Henry Huang ,  H. Montgomery Manning

IPC分类号： H01L29/02 ,  G11C13/00 ,  G11C13/02 ,  G11C23/00 ,  H01L45/00 ,  H01L29/861 ,  H01L29/872 ,  H01L27/24 ,  H01L29/16 ,  H01L29/06 ,  H01L51/00 ,  H01L27/28 ,  B82Y10/00

CPC分类号： B62J7/06 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/0097 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/35 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L27/285 ,  H01L29/0669 ,  H01L29/1606 ,  H01L29/861 ,  H01L29/872 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675 ,  H01L51/0048 ,  H01L51/0579

摘要： The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

摘要翻译： 本公开涉及基于碳的二极管，基于碳的电阻变化存储元件，具有电阻变化存储元件和基于碳的二极管的电阻变化存储器，制造碳基二极管的方法，制造具有碳基二极管的电阻变化存储元件的方法，以及 制造具有基于碳的二极管的电阻变化存储元件的电阻变化存储器的方法。 碳基二极管可以是可以使用碳同素异形体形成的任何合适类型的二极管，例如半导体单壁碳纳米管（s-SWCNT），半导体Buckminsterfulleren（例如C60 Buckyballs）或半导体石墨层（层状石墨烯）。 碳基二极管可以是pn结二极管，肖特基二极管，其他任何其他类型的使用碳同素异形体形成的二极管。 碳基二极管可以放置在三维（3D）电子器件中的任何集成度，例如与部件或布线层集成。

公开(公告)号：US09047957B2

公开(公告)日：2015-06-02

申请号：US13557179

申请日：2012-07-24

申请人： Holger Kropp ,  Meinolf Blawat

发明人： Holger Kropp ,  Meinolf Blawat

IPC分类号： G11C17/00 ,  H01L29/06 ,  H01L31/00 ,  G11C17/10 ,  B82Y10/00 ,  G11C13/02 ,  G11C23/00 ,  H01L27/10 ,  H01L27/102 ,  B82Y30/00

CPC分类号： G11C17/10 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/19 ,  G11C2213/35 ,  G11C2213/81 ,  H01L27/101 ,  H01L27/1021 ,  H01L29/0665

摘要： A bit cell of the PROM-device comprises a carbon nanotube having a tilted portion comprising a free end and a fixed portion which is to the reference node. The carbon nanotube comprises a structural defect between the fixed and the tilted portion which causes the carbon nanotube to tilt such that the free end is electrically connected to either the storage electrode or an opposite release electrode.

摘要翻译： PROM装置的位单元包括具有包括自由端的倾斜部分和到参考节点的固定部分的碳纳米管。 碳纳米管包括在固定和倾斜部分之间的结构缺陷，这导致碳纳米管倾斜，使得自由端电连接到存储电极或相对的释放电极。

公开(公告)号：US08923029B2

公开(公告)日：2014-12-30

申请号：US13551571

申请日：2012-07-17

申请人： Meinolf Blawat ,  Holger Kropp

发明人： Meinolf Blawat ,  Holger Kropp

IPC分类号： G11C17/00 ,  G11C17/14 ,  G11C13/02 ,  G11C23/00 ,  H01L29/06 ,  H01L51/00 ,  B82Y10/00

CPC分类号： G11C17/14 ,  B82Y10/00 ,  G11C13/025 ,  G11C17/00 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/19 ,  G11C2213/35 ,  H01L29/0665 ,  H01L51/0048 ,  Y10S977/709 ,  Y10S977/731 ,  Y10S977/743 ,  Y10S977/745

摘要： The field programmable read-only memory device includes a memory cell having a switching element for storing bit information. The switching element provides a switchable electrical connection between a word line and a bit line and includes a static body and a movable connecting element. The switchable electrical connection is non-volatile.

摘要翻译： 现场可编程只读存储器件包括具有用于存储位信息的开关元件的存储单元。 开关元件在字线和位线之间提供可切换的电连接，并且包括静态主体和可移动连接元件。 可切换的电气连接是非易失性的。

公开(公告)号：US08788906B2

公开(公告)日：2014-07-22

申请号：US13860211

申请日：2013-04-10

申请人： Apple Inc.

发明人： Dotan Sokolov ,  Naftali Sommer ,  Uri Perlmutter ,  Ofir Shalvi

IPC分类号： G11C23/00 ,  G06F12/00 ,  G06F11/10 ,  G11C11/56

CPC分类号： G06F11/1072 ,  G06F11/1044 ,  G06F11/1048 ,  G06F11/1076 ,  G06F12/00 ,  G11C11/56 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004

摘要： A method for operating a memory includes storing data in a plurality of analog memory cells that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller, which is fabricated on a second semiconductor die that is different from the first semiconductor die. so as to enable the memory controller to reconstruct the data responsively to the preprocessed data.

摘要翻译： 一种用于操作存储器的方法包括：通过将输入存储值写入到一组模拟存储器单元中，将数据存储在制造在第一半导体管芯上的多个模拟存储器单元中。 在存储数据之后，使用相应的不同的阈值集合读取组中每个模拟存储器单元的多个输出存储值，从而提供分别对应于阈值集合的输出存储值的多个输出组。 输出存储值的多个输出组由在第一半导体管芯上制造的电路预处理，以产生预处理的数据。 预处理数据被提供给存储器控制器，该存储器控制器制造在与第一半导体管芯不同的第二半导体管芯上。 以使得存储器控制器能够响应于预处理的数据重构数据。

公开(公告)号：US06919592B2

公开(公告)日：2005-07-19

申请号：US09915093

申请日：2001-07-25

申请人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

发明人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

IPC分类号： B82B1/00 ,  B81B3/00 ,  B82B3/00 ,  G11C13/02 ,  G11C23/00 ,  H01H59/00 ,  H01L21/768 ,  H01L27/10 ,  H01L29/06 ,  H01L29/73

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L27/10 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/796 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/943 ,  Y10T428/24893 ,  Y10T428/24917

摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

摘要翻译： 公开了诸如存储单元的机电电路及其制造方法。 这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。 电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。 在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。 每个带包括一个或多个纳米管。

公开(公告)号：US20050104085A1

公开(公告)日：2005-05-19

申请号：US10886648

申请日：2004-07-07

申请人： Joseph Pinkerton ,  John Harlan ,  Jeffrey Mullen

发明人： Joseph Pinkerton ,  John Harlan ,  Jeffrey Mullen

IPC分类号： G11C13/02 ,  G11C23/00 ,  H01H1/00 ,  H01H1/027 ,  H01L31/072 ,  H01L21/336

CPC分类号： G11C23/00 ,  B81B3/0021 ,  B81B2201/014 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  G11C2213/16 ,  H01H1/0094 ,  H01H1/027 ,  Y10S977/732

摘要： Nanoelectromechanical switch systems (NEMSS) that are structured around the mechanical manipulation of nanotubes are provided. Such NEMSS can realize the functionality of, for example, automatic switches, adjustable diodes, amplifiers, inverters, variable resistors, pulse position modulators (PPMs), and transistors. In one embodiment, a nanotube is anchored at one end to a base member. The nanotube is also coupled to a voltage source. This voltage source creates an electric charge at the tip of the free-moving-end of the nanotube that is representative of the polarity and intensity of the voltage source. The free-moving end of this nanotube can be electrically controlled by applying an electric charge to a nearby charge member layer that is either of the same (repelling) or opposite (attracting) polarity of the nanotube. A contact layer is then placed in the proximity of the free-moving end of the nanotube such that when a particular electric charge is placed on the nanotube, the nanotube electrically couples the contact layer.

摘要翻译： 提供了围绕纳米管的机械操作构建的纳米机电开关系统（NEMSS）。 这样的NEMSS可以实现例如自动开关，可调二极管，放大器，反相器，可变电阻器，脉冲位置调制器（PPM）和晶体管的功能。 在一个实施方案中，纳米管在一端锚定到基底构件。 纳米管还耦合到电压源。 该电压源在纳米管的自由移动端的尖端处产生代表电压源的极性和强度的电荷。 该纳米管的自由移动端可以通过将电荷施加到与纳米管相同（排斥）或相反（吸引））极性的附近的电荷元件层来进行电控制。 然后将接触层放置在纳米管的自由移动端附近，使得当在纳米管上放置特定的电荷时，纳米管电耦合接触层。