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110 条记录 (耗时 0.026 秒)

    Mechanical memory and tunable nano-electromechanical systems (NEMS) resonator
    1.
    发明申请
    Mechanical memory and tunable nano-electromechanical systems (NEMS) resonator 有权

    公开(公告)号：US20220238172A1

    公开(公告)日：2022-07-28

    申请号：US17613192

    申请日：2020-05-27

    申请人： University of Oregon

    发明人： Benjamín J. Alemán ,  David J. Miller

    IPC分类号： G11C23/00 ,  G02B26/00 ,  G11C11/56

    摘要： A method of timing a resonant frequency of a nanoelectromechanical systems (NEMS) drum device is performed by applying a gate voltage between the drum membrane [100] and a back gate [104] to alter the resonant frequency of the membrane to a desired frequency; photoionizing the drum membrane with a laser to detune the membrane resonant frequency to a ground state frequency; and releasing the gate voltage to set the membrane to the desired resonant frequency. The method provides the basis for various applications including NEMS memory and photodetection techniques. The NEMS device may be implemented as a graphene/hBN membrane [100] suspended on a Si02 layer [102] deposited on a Si substrate [104].

    Non-volatile memory array using electromechanical switches for cell storage
    2.
    发明授权
    Non-volatile memory array using electromechanical switches for cell storage 有权

    公开(公告)号：US09911504B2

    公开(公告)日：2018-03-06

    申请号：US14558505

    申请日：2014-12-02

    申请人： IMEC vzw

    发明人： Stefan Cosemans

    IPC分类号： G11C23/00 ,  G11C11/54 ,  H01H1/00

    CPC分类号： G11C23/00 ,  G11C11/54 ,  H01H1/0094

    摘要： A data storage cell for storing data is disclosed. In one aspect, the data storage cell comprises a first nano electromechanical switch comprising a first moveable beam fixed to a first anchor, a first control gate and a second control gate, a first output node against which the first moveable beam can be positioned. The data storage cell also comprises a second nano electromechanical switch comprising a second moveable beam fixed to a second anchor, a third control gate and a fourth control gate. The second moveable beam can be positioned against the first output node. Further, the first nano electromechanical switch and the second nano electromechanical switch are configured for selecting a first or a second state of the data storage cell and are configured for having their moveable beam complementary positioned to the first output node. A memory arrangement of such data storage cells is also disclosed, as well as methods for writing data to the data storage cells and for reading data from the data storage cells.

    QUANTUM TECHNOLOGY
    3.
    发明申请
    QUANTUM TECHNOLOGY 审中-公开
    量子技术

    公开(公告)号：US20170018312A1

    公开(公告)日：2017-01-19

    申请号：US15120578

    申请日：2015-02-23

    申请人： OXFORD UNIVERSITY INNOVATION LIMITED

    发明人： Simon Benjamin ,  John Morton

    IPC分类号： G11C23/00 ,  G06N99/00

    CPC分类号： G11C23/00 ,  G06N99/002

    摘要： A device for the storage and/or processing of quantum information comprises: a body (6), formed from a material having negligible net nuclear or electronic magnetic field; a set of data entities (4) embedded in said body, each having a plurality of magnetic field states; a set of probes (2), offset from the body, arranged to acquire internal phase shifts due to the magnetic fields of said data entities; wherein the probes (2) are each arranged to move relative to a plurality of data entities (4) in order that each probe (2) acquires an internal phase shift from the plurality of data entities (4); and means for reading each probe (2), thereby establishing a parity of the plurality of data entities (4).

    摘要翻译： 用于存储和/或处理量子信息的装置包括：由具有可忽略的净核或电磁场的材料形成的主体（6）; 嵌入在所述主体中的数据实体（4）的集合，每个具有多个磁场状态; 从身体偏移的一组探头（2），被布置成由于所述数据实体的磁场而获取内部相移; 其中所述探针（2）各自布置成相对于多个数据实体（4）移动，以便每个探测器（2）从所述多个数据实体（4）获取内部相移; 以及用于读取每个探测器（2）的装置，从而建立所述多个数据实体（4）的奇偶校验。

    FERROELECTRIC MECHANICAL MEMORY AND METHOD
    4.
    发明申请
    FERROELECTRIC MECHANICAL MEMORY AND METHOD 有权
    电力机械记忆与方法

    公开(公告)号：US20160315090A1

    公开(公告)日：2016-10-27

    申请号：US15200816

    申请日：2016-07-01

    申请人： U.S. Army Research Laboratory

    发明人： GLEN R. Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

    IPC分类号： H01L27/115 ,  G11C23/00 ,  G11C11/22

    CPC分类号： H01L27/11507 ,  G11C11/22 ,  G11C11/221 ,  G11C11/2273 ,  G11C11/50 ,  G11C23/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

    摘要翻译： 一种制造包括基底的存储器件的方法; 包括铁电层和至少两个导电层的电容器，所述铁电层位于所述至少两个导电层之间; 所述至少两个导电层中的每一个可操作地连接到电流源; 在第一端附接到基座并在第二端处可移动的悬臂，铁电电容器被安装到悬臂上，使得悬臂的第二端在施加电流到铁电层时移动预定的位移，这引起了 铁电层，从而引起悬臂的位移，其与接触件可操作地相关联，使得当悬臂的预定位移时，触头能够进行电连接。 连接的存在或不存在形成存储器单元的两个状态。

    Architecture for device having cantilever electrode
    6.
    发明授权
    Architecture for device having cantilever electrode 有权
    具有悬臂电极的器件结构

    公开(公告)号：US09019756B2

    公开(公告)日：2015-04-28

    申请号：US12070151

    申请日：2008-02-14

    申请人： Robertus Petrus van Kampen

    发明人： Robertus Petrus van Kampen

    IPC分类号： G11C11/50 ,  H01H59/00 ,  G11C23/00

    CPC分类号： H01H59/0009 ,  G11C11/50 ,  G11C23/00

    摘要： In one embodiment, a non-volatile memory bitcell includes a program electrode, an erase electrode, a cantilever electrode connected to a bi-stable cantilever positioned between the program electrode and the erase electrode, and switching means connected to the program electrode arranged to apply a voltage potential onto the program electrode, or to detect or to prevent the flow of current from the cantilever to the program electrode. The switching means may comprise a switch having a first node, a second node, and a control node, wherein voltage is applied to the control node to activate the switch to provide a connection between the first node and the second node. The switching means may comprise a pass-gate. The switching means may comprise an NMOS transistor. The switching means may comprise a PMOS transistor. The switching means may comprise a MEMS switch.

    摘要翻译： 在一个实施例中，非易失性存储器位单元包括编程电极，擦除电极，连接到位于编程电极和擦除电极之间的双稳态悬臂的悬臂电极，以及连接到编程电极的开关装置， 编程电极上的电压电位，或者检测或防止从悬臂到编程电极的电流流动。 切换装置可以包括具有第一节点，第二节点和控制节点的交换机，其中电压被施加到控制节点以激活交换机以在第一节点和第二节点之间提供连接。 开关装置可以包括通孔。 开关装置可以包括NMOS晶体管。 开关装置可以包括PMOS晶体管。 开关装置可以包括MEMS开关。

    MEMS device and method of manufacture
    7.
    发明授权
    MEMS device and method of manufacture 有权
    MEMS器件及其制造方法

    公开(公告)号：US08975722B2

    公开(公告)日：2015-03-10

    申请号：US14282892

    申请日：2014-05-20

    申请人： Texas Instruments Incorporated

    发明人： James N. Hall ,  Lance W. Barron ,  Cuiling Gong

    IPC分类号： H01L21/70 ,  H01L27/118 ,  G11C23/00 ,  H01L21/77

    CPC分类号： H01L27/118 ,  G11C23/00 ,  H01L21/77 ,  H01L27/11803

    摘要： A MEMS logic device comprising agate which pivots on a torsion hinge, two conductive channels on the gate, one on each side of the torsion hinge, source and drain landing pads under the channels, and two body bias elements under the gate, one on each side of the torsion hinge, so that applying a threshold bias between one body bias element and the gate will pivot the gate so that one channel connects the respective source and drain landing pad, and vice versa. An integrated circuit with MEMS logic devices on the dielectric layer, with the source and drain landing pads connected to metal interconnects of the integrated circuit. A process of forming the MEM switch.

    摘要翻译： MEMS逻辑器件包括在扭转铰链上枢转的玛瑙，门上的两个导电通道，扭转铰链的每一侧上的一个，通道下的源极和漏极着陆焊盘以及栅极下方的两个体偏置元件 扭转铰链的一侧，使得在一个主体偏置元件和门之间施加阈值偏压将使浇口枢转，使得一个通道连接相应的源极和漏极着陆焊盘，反之亦然。 在介质层上具有MEMS逻辑器件的集成电路，源极和漏极着陆焊盘连接到集成电路的金属互连。 形成MEM开关的过程。