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公开(公告)号：US20130039115A1
公开(公告)日：2013-02-14
申请号：US13551571
申请日：2012-07-17
Applicant: Meinolf Blawat , Holger Kropp
Inventor： Meinolf Blawat , Holger Kropp
CPC classification number: G11C17/14 , B82Y10/00 , G11C13/025 , G11C17/00 , G11C23/00 , G11C2213/16 , G11C2213/19 , G11C2213/35 , H01L29/0665 , H01L51/0048 , Y10S977/709 , Y10S977/731 , Y10S977/743 , Y10S977/745
Abstract: The field programmable read-only memory device comprises a memory cell having a switching element for storing bit information. The switching element provides a switchable electrical connection between word line and a bit line and comprises a static body and a moveable connecting element. The switchable electrical connection is non-volatile.
Abstract translation: 现场可编程只读存储器件包括具有用于存储位信息的开关元件的存储单元。 开关元件在字线和位线之间提供可切换的电连接，并且包括静态主体和可移动的连接元件。 可切换的电气连接是非易失性的。
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公开(公告)号：US07391235B2
公开(公告)日：2008-06-24
申请号：US11790713
申请日：2007-04-27
Applicant: Blaise Laurent Mouttet
Inventor： Blaise Laurent Mouttet
IPC: H03K19/177
CPC classification number: H03K19/177 , Y10S977/708 , Y10S977/709 , Y10S977/712 , Y10S977/94
Abstract: A device including a crossbar array including a programmable material layer and an array of op-amps connected to outputs of the crossbar array.
Abstract translation: 一种包括交叉开关阵列的装置，包括可编程材料层和连接到交叉开关阵列的输出的运算放大器阵列。
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公开(公告)号：US07302513B2
公开(公告)日：2007-11-27
申请号：US11395237
申请日：2006-04-03
Applicant: Blaise Laurent Mouttet
Inventor： Blaise Laurent Mouttet
IPC: G06F13/00
CPC classification number: H03K19/177 , Y10S977/708 , Y10S977/709 , Y10S977/712 , Y10S977/94
Abstract: A signal processing system is taught to be formed by combining a crossbar array with programming circuitry and signal input circuitry so as to provide a linear transformation from a set of input signals to a set of output signals. Applications of such a system to waveform generation, signal filtering, communications, and pattern recognition are explained. In one embodiment the crossbar array of the signal processing system may be a molecular nanowire crossbar array in which the crossbar interconnects are addressed via dual arrays of scanning probe tips so as to provide an interface between the molecular crossbar electronics and conventional solid state electronics used in the programming and signal processing circuitry.
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公开(公告)号：US20070241942A1
公开(公告)日：2007-10-18
申请号：US11395237
申请日：2006-04-03
Applicant: Blaise Mouttet
Inventor： Blaise Mouttet
IPC: H03M7/00
CPC classification number: H03K19/177 , Y10S977/708 , Y10S977/709 , Y10S977/712 , Y10S977/94
Abstract: A signal processing system is taught to be formed by combining a crossbar array with programming circuitry and signal input circuitry so as to provide a linear transformation from a set of input signals to a set of output signals. Applications of such a system to waveform generation, signal filtering, communications, and pattern recognition are explained. In one embodiment the crossbar array of the signal processing system may be a molecular nanowire crossbar array in which the crossbar interconnects are addressed via dual arrays of scanning probe tips so as to provide an interface between the molecular crossbar electronics and conventional solid state electronics used in the programming and signal processing circuitry.
Abstract translation: 教导通过将交叉开关阵列与编程电路和信号输入电路组合以形成从一组输入信号到一组输出信号的线性变换来形成信号处理系统。 说明了这种系统对波形生成，信号滤波，通信和模式识别的应用。 在一个实施例中，信号处理系统的交叉开关阵列可以是分子纳米线交叉开关阵列，其中通过扫描探针尖端的双阵列寻址交叉开关互连，以便在分子交叉电子电路和常规固态电子器件之间提供界面 编程和信号处理电路。
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公开(公告)号：US20070229112A1
公开(公告)日：2007-10-04
申请号：US11790713
申请日：2007-04-27
Applicant: Blaise Laurent Mouttet
Inventor： Blaise Laurent Mouttet
IPC: H03K19/177
CPC classification number: H03K19/177 , Y10S977/708 , Y10S977/709 , Y10S977/712 , Y10S977/94
Abstract: A device including a crossbar array including a programmable material layer and an array of op-amps connected to outputs of the crossbar array.
Abstract translation: 一种包括交叉开关阵列的装置，包括可编程材料层和连接到交叉开关阵列的输出的运算放大器阵列。
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Patent Agency Ranking
公开(公告)号：US20070229111A1
公开(公告)日：2007-10-04
申请号：US11790712
申请日：2007-04-27
Applicant: Blaise Laurent Mouttet
Inventor： Blaise Laurent Mouttet
IPC: H03K19/177
CPC classification number: H03K19/177 , Y10S977/708 , Y10S977/709 , Y10S977/712 , Y10S977/94
Abstract: A device includes a rectifying layer having a first side and a second side, a first array of wires formed above the first side of the rectifying layer, and a second array of wires formed below the second side of the rectifying layer.
Abstract translation: 一种器件包括具有第一侧和第二侧的整流层，形成在整流层的第一侧上方的第一阵列阵列，以及形成在精整层的第二侧下方的第二阵列阵列。
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7.发明申请Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same 有权使用多壁碳纳米管的非挥发性碳纳米管记忆装置及其操作和制造方法公开(公告)号：US20070171707A1
公开(公告)日：2007-07-26
申请号：US11648807
申请日：2007-01-03
Applicant: Leonid Maslov , Jin-Gyoo Yoo , Cheol-Soon Kim
Inventor： Leonid Maslov , Jin-Gyoo Yoo , Cheol-Soon Kim
IPC: G11C16/04
CPC classification number: G11C13/025 , B82Y10/00 , G11C13/0069 , G11C23/00 , G11C2013/009 , G11C2213/16 , H01L51/0048 , Y10S977/709 , Y10S977/724 , Y10S977/752 , Y10S977/943
Abstract: A nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same are provided. The nonvolatile memory device may include a substrate, at least one first electrode on the substrate, first and second vertical walls on the at least one first electrode spaced from each other, a multiwall carbon nanotube on the at least one first electrode between the first and second vertical walls, second and third electrodes on the first and second vertical walls respectively and at least one fourth electrode spaced a variable distance D (where D≧0) from the multiwall carbon nanotubes.
Abstract translation: 提供了一种使用多壁碳纳米管的非挥发性碳纳米管记忆装置及其操作及制造方法。 所述非易失性存储器件可以包括衬底，所述衬底上的至少一个第一电极，所述至少一个彼此间隔开的所述至少一个第一电极的第一和第二垂直壁，所述至少一个第一电极上的第一和第二电极之间的多壁碳纳米管， 分别在第一和第二垂直壁上的第二垂直壁，第二和第三电极以及与多壁碳纳米管隔开可变距离D（其中D> = 0）的至少一个第四电极。
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公开(公告)号：US07447828B2
公开(公告)日：2008-11-04
申请号：US11790495
申请日：2007-04-26
Applicant: Blaise Laurent Mouttet
Inventor： Blaise Laurent Mouttet
IPC: G06F13/00
CPC classification number: H03K19/177 , Y10S977/708 , Y10S977/709 , Y10S977/712 , Y10S977/94
Abstract: A method includes providing a crossbar array including a programmable material layer, wherein the crossbar array is configured to function as part of a signal processing system and reprogramming at least one impedance value of the programmable material layer formed at crosspoints of the crossbar array to change the signal processing system.
Abstract translation: 一种方法包括提供包括可编程材料层的交叉开关阵列，其中所述交叉开关阵列被配置为用作信号处理系统的一部分，并且重新编程在所述交叉开关阵列的交叉点处形成的所述可编程材料层的至少一个阻抗值， 信号处理系统。
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公开(公告)号：US20070257704A1
公开(公告)日：2007-11-08
申请号：US11790495
申请日：2007-04-26
Applicant: Blaise Mouttet
Inventor： Blaise Mouttet
IPC: H03K19/173
CPC classification number: H03K19/177 , Y10S977/708 , Y10S977/709 , Y10S977/712 , Y10S977/94
Abstract: A method includes providing a crossbar array including a programmable material layer, wherein the crossbar array is configured to function as part of a signal processing system and reprogramming at least one impedance value of the programmable material layer formed at crosspoints of the crossbar array to change the signal processing system.
Abstract translation: 一种方法包括提供包括可编程材料层的交叉开关阵列，其中所述交叉开关阵列被配置为用作信号处理系统的一部分，并且重新编程在所述交叉开关阵列的交叉点处形成的所述可编程材料层的至少一个阻抗值， 信号处理系统。
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10.发明授权公开(公告)号：US07132678B2
公开(公告)日：2006-11-07
申请号：US10392983
申请日：2003-03-21
Applicant: Cherie Renee Kagan , Richard Martel
Inventor： Cherie Renee Kagan , Richard Martel
CPC classification number: H01L51/0541 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0062 , H01L51/0078 , H01L51/0545 , Y10S977/709 , Y10S977/731
Abstract: An electronic device includes a source region and a drain region, a self-assembled monolayer disposed adjacent to the source region and the drain region, the self-assembled monolayer including at least one conjugated molecule, and a conductive substrate disposed adjacent to the self-assembled monolayer.
Abstract translation: 电子器件包括源极区和漏极区，邻近源极区和漏极区设置的自组装单层，包含至少一个共轭分子的自组装单层和邻近自组装的导电衬底， 组装单层。
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