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    Microetching and cleaning of printed wiring boards
    95.
    发明授权
    Microetching and cleaning of printed wiring boards 失效
    印刷电路板的微蚀刻和清洁

    公开(公告)号：US5855805A

    公开(公告)日：1999-01-05

    申请号：US899033

    申请日：1997-07-23

    Applicant: Nancy D. Arabinick

    Inventor： Nancy D. Arabinick

    IPC: C11D1/72 ,  C11D3/02 ,  C11D3/39 ,  C11D11/00 ,  C23F1/18 ,  C23G1/10 ,  H05K3/28 ,  H05K3/38 ,  C11D9/04 ,  B44C1/22 ,  C03C15/00

    CPC classification number: C11D3/046 ,  C11D11/0047 ,  C11D3/3942 ,  C23F1/18 ,  C23G1/103 ,  H05K3/383 ,  C11D1/72 ,  H05K2203/0392 ,  H05K2203/0796 ,  H05K2203/125 ,  H05K3/28

    Abstract: The microetching and cleaning of copper clad substrates in printed wiring board production with solutions containing alkali metal persulfate and sulfuric acid is controlled to provide slower and more consistent copper etch rates by the presence of high proportions of alkali metal sulfate or an alkali metal sulfate/bisulfate mixture in the solutions, in a mole ratio of persulfate to sulfate or sulfate/bisulfate mixture of 1:0.1 to 1:10. When bisulfate is present with the sulfate, the sulfate will comprise at least about 10 mole % of the sulfate/bisulfate mixture. A surfactant may be present in the solutions to aid wettability on the copper clad substrates.

    Abstract translation: 控制印刷电路板生产中包含碱金属过硫酸盐和硫酸的溶液中的铜包覆基板的微蚀刻和清洗，以通过高比例的碱金属硫酸盐或碱金属硫酸盐/硫酸氢盐的存在来提供更慢和更一致的铜蚀刻速率 溶液中的摩尔比为1:0.1至1:10的过硫酸盐与硫酸盐或硫酸盐/硫酸氢盐混合物的摩尔比。 当硫酸氢盐与硫酸盐一起存在时，硫酸盐将包含至少约10摩尔％的硫酸盐/硫酸氢盐混合物。 溶液中可能存在表面活性剂，以有助于铜包覆基材上的润湿性。

    Etching solution for copper or copper alloy
    98.
    发明授权
    Etching solution for copper or copper alloy 失效
    铜或铜合金蚀刻溶液

    公开(公告)号：US5700389A

    公开(公告)日：1997-12-23

    申请号：US510299

    申请日：1995-08-02

    Applicant: Toshiko Nakagawa

    Inventor： Toshiko Nakagawa

    IPC: C23F1/18 ,  C23G1/10 ,  H05K3/06 ,  H05K3/28 ,  H05K3/38 ,  C23F3/00 ,  C23F1/00

    CPC classification number: C23G1/103 ,  C23F1/18 ,  H05K3/383 ,  H05K2203/0796 ,  H05K2203/124 ,  H05K3/064 ,  H05K3/28

    Abstract: An etching solution for copper or copper alloys comprising, (a) sulfuric acid, (b) a persulfate, (c) at least one compound selected from imidazole, imidazole derivatives, pyridine derivatives, triazine, and triazine derivatives, and (d) water. The etching solution exhibits a high etching speed and does not oxidize the copper surfaces after etching.

    Abstract translation: 一种用于铜或铜合金的蚀刻溶液，其包含（a）硫酸，（b）过硫酸盐，（c）至少一种选自咪唑，咪唑衍生物，吡啶衍生物，三嗪和三嗪衍生物的化合物，和（d）水 。 蚀刻溶液表现出高蚀刻速度，并且在蚀刻后不会氧化铜表面。

    Process for through-hole plating of two-layer printed circuit boards and multilayers
    99.
    发明授权
    Process for through-hole plating of two-layer printed circuit boards and multilayers 失效
    双层印刷电路板和多层通孔电镀工艺

    公开(公告)号：US5575898A

    公开(公告)日：1996-11-19

    申请号：US530998

    申请日：1995-09-20

    Applicant: Gerhard-Dieter Wolf ,  Friedrich Jonas ,  Reinhard Schomacker

    Inventor： Gerhard-Dieter Wolf ,  Friedrich Jonas ,  Reinhard Schomacker

    IPC: C25D5/54 ,  C25D7/00 ,  H05K3/42 ,  H05K3/46 ,  C25D5/02 ,  C25D5/56

    CPC classification number: C25D5/54 ,  H05K3/424 ,  H05K2201/0329 ,  H05K2203/0796 ,  H05K3/427

    Abstract: Process for through-hole plating of printed circuit boards and multilayers by applying a conductive layer of a polythiophene onto the walls of the through-holes and electrodeposition of copper onto the walls of the through-holes, characterized in that a microemulsion of a monomeric thiophene of the formula (I) is used to form the conductive polythiophene layer, ##STR1## in which X denotes oxygen or a single bond,R.sub.1 and R.sub.2 mutually independently denote hydrogen or a C.sub.1 -C.sub.4 alkyl group or together form an optionally substituted C.sub.1 -C.sub.4 alkylene residue or a 1,2-cyclohexylene residue,and in that the conductive layer of polythiophene is produced on the walls of the through-holes by subsequent or simultaneous treatment with acid and, finally, a metal is electro-deposited on this conductive base.

    Abstract translation: 通过在通孔的壁上施加聚噻吩的导电层并将铜电沉积在通孔的壁上，印刷电路板和多层的通孔电镀工艺，其特征在于单体噻吩的微乳液 （I）的化合物用于形成导电性聚噻吩层，其中X表示氧或单键，R1和R2相互独立地表示氢或C1-C4烷基，或一起形成任选地 取代的C1-C4亚烷基残基或1,2-亚环己基残基，并且通过随后或同时用酸处理，在通孔的壁上产生聚噻吩的导电层，最后将金属电沉积 在这个导电基底上。

    Process for manufacturing metalized ceramic substrates
    100.
    发明授权
    Process for manufacturing metalized ceramic substrates 失效
    金属化陶瓷基板的制造工艺

    公开(公告)号：US5352326A

    公开(公告)日：1994-10-04

    申请号：US69304

    申请日：1993-05-28

    Applicant: Douglas Cywar ,  Don H. Hess ,  Christian Lalonde

    Inventor： Douglas Cywar ,  Don H. Hess ,  Christian Lalonde

    IPC: C23F1/00 ,  C23F1/38 ,  H01L21/48 ,  H01L23/12 ,  H05K3/00 ,  H05K3/06 ,  H05K3/38 ,  B44C1/22 ,  B29C37/00

    CPC classification number: H01L21/4846 ,  H05K3/064 ,  H05K2203/0796 ,  H05K3/0082 ,  H05K3/067 ,  H05K3/388

    Abstract: The present invention provides a process for rendering acrylic based negative photoresists resistant to hot alkaline permanganate etchant and the iron chloride etchant and for improving the adhesion of the photoresist to the substrate, yet does not require halogenated reagents to develop or strip the photoresist. It has been discovered that the degradation of acrylic based negative photoresists by the permanganate etchant may be overcome by exposing an imaged acrylic based negative photoresist to select wavelengths of actinic radiation either ultraviolet light that is rich in deep UV, about 254 nm wavelength; or infrared radiation from about 2.4 to about 8 microns. Where UV radiation is used, the photoresist is then baked to reduce undercutting of the photoresist. Thereafter, the photoresist is stripped using nonhalocarbon solvents.

    Abstract translation: 本发明提供了一种用于制备耐热碱性高锰酸盐蚀刻剂和氯化铁蚀刻剂的丙烯酸类负性光致抗蚀剂的方法，并且用于改善光致抗蚀剂与基材的粘附性，但不需要卤化试剂来显影或剥离光致抗蚀剂。 已经发现，高锰酸盐蚀刻剂对丙烯酸类负性光致抗蚀剂的降解可以通过曝光成像的丙烯酸类负性光致抗蚀剂来选择波长的光化辐射来克服，紫外光富含深紫外光，约254nm波长; 或约2.4至约8微米的红外辐射。 在使用UV辐射的情况下，然后烘烤光致抗蚀剂以减少光刻胶的底切。 此后，使用非卤代烃溶剂汽提光致抗蚀剂。

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