公开(公告)号：US20160368070A1

公开(公告)日：2016-12-22

申请号：US14772639

申请日：2015-04-21

Applicant: NINGBO POWERWAY MATERIALISE CO., LTD.

Inventor： Zhining Liang ,  Fanglin Guo ,  Linhui Wan ,  Tong Wu

IPC: B23H7/24 ,  C22C1/02 ,  B22D21/00 ,  B22D25/02 ,  C22C9/04 ,  C22F1/08 ,  C23G1/10 ,  C23G1/24 ,  C25D3/22 ,  C25D7/06 ,  C25D5/34 ,  C25D5/50 ,  C22F1/16 ,  B23H7/08 ,  B21C23/08 ,  B21C1/02 ,  C22C18/02

CPC classification number: B23H7/24 ,  B21C1/02 ,  B21C23/08 ,  B22D21/005 ,  B22D25/02 ,  B23H7/08 ,  C22C1/02 ,  C22C9/04 ,  C22C18/02 ,  C22F1/08 ,  C22F1/165 ,  C23G1/103 ,  C23G1/24 ,  C25D3/22 ,  C25D5/34 ,  C25D5/50 ,  C25D7/0607

Abstract: The invention discloses a high-precision zinc-based alloy electrode wire, the external shell thereof consisting of: Zn: 70.5-95%; Cu: 2.5-27%; X: 0.02-4.0%; Y: 0.002-0.4%, and unavoidable impurities; where, X refers to any two kinds of metals selected from Ni, Ag, Cr, Si and Zr, and the weight percentage of each of these two kinds of metals is 0.01-2.0%; and Y refers to any two kinds of metals selected from Ti, Al, Co, B, and P, and the weight percentage of each of these two kinds of metals is 0.001-0.2%; the ε-phase in a metallurgical structure of the external shell is above 80 wt %. The invention also provides a method for manufacturing the electrode wire, which has high surface smoothness of the cut metal workpieces to improve the cutting precision. The method has simple process, high maneuverability, less steps, so as to facilitate large-scale and automated production.

Abstract translation: 本发明公开了一种高精度锌基合金电极线，其外壳由Zn：70.5-95％组成。 Cu：2.5-27％; X：0.02-4.0％; Y：0.002-0.4％，不可避免的杂质; 其中X是指选自Ni，Ag，Cr，Si和Zr中的任何两种金属，这两种金属的重量百分比为0.01-2.0％; Y是指选自Ti，Al，Co，B和P中的任何两种金属，这两种金属的重量百分比为0.001-0.2％; 外壳的冶金结构中的ε相高于80重量％。 本发明还提供了一种用于制造电极丝的方法，其具有高切削金属工件的表面平滑度以提高切割精度。 该方法工艺简单，机动性高，步骤少，便于大规模自动化生产。

公开(公告)号：US20150344826A1

公开(公告)日：2015-12-03

申请号：US14826840

申请日：2015-08-14

Applicant: Advanced Technology Materials, Inc.

Inventor： William A. Wojtczak ,  Ma. Fatima Seijo ,  David Bernhard ,  Long Nguyen

IPC: C11D7/10 ,  H01L21/3213 ,  H01L21/02 ,  C11D7/32 ,  C11D11/00

CPC classification number: C11D3/30 ,  C09K13/00 ,  C09K13/08 ,  C11D3/32 ,  C11D3/33 ,  C11D7/10 ,  C11D7/264 ,  C11D7/265 ,  C11D7/266 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3254 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23F11/142 ,  C23F11/146 ,  C23G1/103 ,  C23G1/106 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/32136

Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract translation: 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

公开(公告)号：US09017563B2

公开(公告)日：2015-04-28

申请号：US13527751

申请日：2012-06-20

Applicant: Emi Ushioda ,  Tetsuo Imai

Inventor： Emi Ushioda ,  Tetsuo Imai

IPC: H01B13/00 ,  C03C15/00 ,  C25D5/54 ,  H01L21/30 ,  C09K13/00 ,  C23G1/10 ,  C23C22/52 ,  C23C22/63 ,  C23G1/20 ,  C23C18/18 ,  C23C18/12 ,  C23C18/16 ,  H05K3/24 ,  H05K1/03 ,  H05K3/12

CPC classification number: C23G1/103 ,  C23C18/1216 ,  C23C18/1651 ,  C23C18/1844 ,  C23C22/52 ,  C23C22/63 ,  C23G1/20 ,  H05K1/0306 ,  H05K3/1291 ,  H05K3/246 ,  H05K2203/0796

Abstract: Provided is a plating method of a circuit substrate comprising a conductive pattern in which a metal layer containing at least silver and copper is exposed on an outer surface. The plating method comprises: step (A) of treating the circuit substrate with a first liquid agent containing an oxidizing agent; step (B) of treating the circuit substrate after the step (A) with a second liquid agent which dissolves copper oxide, and thereby removing copper oxide from the conductive pattern's surface; step (C) of treating the circuit substrate after the step (B) with a third liquid agent whose rate of dissolving silver oxide (I) at 25° C. is 1000 times or more faster than its rate of dissolving copper (0) at 25° C., and thereby removing silver oxide from the conductive pattern's surface; and step (D) of performing electroless plating on the conductive pattern of the circuit substrate after the step (C).

Abstract translation: 提供一种电路基板的电镀方法，该电路基板包括导体图案，其中至少含有银和铜的金属层在外表面上露出。 电镀方法包括：用含有氧化剂的第一液体试剂处理电路基板的工序（A） 在步骤（A）之后用溶解氧化铜的第二液体试剂处理电路基板的步骤（B），从而从导电图案的表面除去氧化铜; 在步骤（B）之后用第三液体试剂处理电路基板的步骤（C），其中溶解氧化银（I）在25℃下的速率比其溶解铜（0）的速率快1000倍或更快 25℃，从而从导电图案的表面除去氧化银; 以及在步骤（C）之后在电路基板的导电图案上进行无电镀的步骤（D）。

公开(公告)号：US07947637B2

公开(公告)日：2011-05-24

申请号：US11770382

申请日：2007-06-28

Applicant: Emil Kneer

Inventor： Emil Kneer

IPC: C11D7/50

CPC classification number: C23G1/103 ,  C11D1/54 ,  C11D3/046 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/245 ,  C11D11/0047 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071

Abstract: The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, optionally, at least one fluoride-containing compound, and, optionally, at least one corrosion inhibitor not containing a carboxyl group. The present disclosure also provides a method of cleaning residues from a semiconductor substrate using the non-corrosive cleaning composition.

Abstract translation: 本公开提供了一种非腐蚀性清洁组合物，其可用于从半导体衬底去除残余物。 该组合物可以包含水，至少一种肼基羧酸酯，至少一种水溶性羧酸，任选的至少一种含氟化物的化合物，和任选的至少一种不含羧基的腐蚀抑制剂。 本公开还提供了使用非腐蚀性清洁组合物来清洁半导体衬底的残留物的方法。

公开(公告)号：US20110056516A1

公开(公告)日：2011-03-10

申请号：US12948383

申请日：2010-11-17

Applicant: Richard E. ADAIR ,  Andreas Lindert

Inventor： Richard E. ADAIR ,  Andreas Lindert

IPC: C23G1/02 ,  C22C28/00

CPC classification number: C11D3/042 ,  C11D3/044 ,  C11D3/046 ,  C11D3/30 ,  C11D7/04 ,  C11D7/08 ,  C11D7/10 ,  C11D11/0029 ,  C23G1/081 ,  C23G1/10 ,  C23G1/103 ,  C23G1/125

Abstract: An environmentally acceptable and comparatively safe acid cleaning solution containing sulfuric acid, water and amine containing inhibitors that adequately remove oxidation or contaminants from surfaces without excessively damaging equipment. The sulfuric acid is effective in removing impurities and contaminants, while the amine moieties or amine salts reduce the otherwise damaging effect of sulfuric acid on equipment and on human skin and tissue.

Abstract translation: 含有硫酸，水和胺的抑制剂的环境可接受和比较安全的酸洗液，可充分去除表面的氧化或污染物，而不会对设备造成严重破坏。 硫酸可有效去除杂质和污染物，而胺部分或胺盐可以减少硫酸对设备和人体皮肤和组织的其他破坏作用。

公开(公告)号：US20100213173A1

公开(公告)日：2010-08-26

申请号：US12774712

申请日：2010-05-05

Applicant: Andrew D. Bailey, III ,  Yunsang Kim

Inventor： Andrew D. Bailey, III ,  Yunsang Kim

IPC: C23F1/00

CPC classification number: C23G1/24 ,  C23G1/103 ,  C23G5/00 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/6708

Abstract: The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.

Abstract translation: 在说明书中描述的各种实施例提供了改进的机理，去除斜边上的不需要的沉积物以提高工艺产量。 实施例提供了处理镀铜衬底的斜边缘以将斜面边缘处的铜转化为铜化合物的设备和方法，铜化合物可以与铜相比以高蚀刻选择性用流体进行湿蚀刻。 在一个实施方案中，铜化合物对铜的高选择性的湿法蚀刻允许在湿蚀刻处理室中在衬底斜面边缘处去除非挥发性铜。 在斜边缘处的等离子体处理允许在精确的空间控制下将斜角边缘处的铜去除到衬底的最边缘约2mm或更小，例如约1mm，约0.5mm或约0.25mm。 此外，上述用于斜边铜剥离的装置和方法不存在铜蚀刻流体溅射在器件区域上以引起铜膜缺陷和变薄的问题。 因此，可以大大提高器件产量。

公开(公告)号：US20100197136A1

公开(公告)日：2010-08-05

申请号：US12668695

申请日：2008-07-03

Applicant: Kenji Shimada ,  Hiroshi Matsunaga ,  Kojiro Abe ,  Kenji Yamada

Inventor： Kenji Shimada ,  Hiroshi Matsunaga ,  Kojiro Abe ,  Kenji Yamada

IPC: H01L21/768 ,  C11D3/28 ,  G03F7/20 ,  H01L21/306

CPC classification number: C23G1/103 ,  C11D3/0073 ,  C11D3/28 ,  C11D3/33 ,  C11D7/10 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3263 ,  C11D7/3281 ,  C11D11/0047 ,  C23G1/06 ,  H01L21/02063 ,  H01L21/02068

Abstract: A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.

Abstract translation: 提供了用于制造半导体器件或具有含铜金属布线的显示器件的步骤中用于清洁和腐蚀抑制的组合物，其中所述腐蚀抑制剂成分是吡唑，吡唑衍生物如3， 咪唑衍生物如1,2,4-三唑，氨基羧酸如亚氨基二乙酸或乙二胺二丙酸盐酸盐，或二硫化物化合物如二异丙基二硫化物或二乙基二硫醚; 清洗剂成分为氟化铵，四甲基氟化铵，乙酸铵，乙酸，乙醛酸，草酸，抗坏血酸，1,2-二氨基丙烷或二甲基乙酰胺中的任一种。 另外，提供了使用该清洗抑制组合物制造半导体装置等的方法。

公开(公告)号：US20090286382A1

公开(公告)日：2009-11-19

申请号：US12232657

申请日：2008-09-22

Applicant: Michael A. Huff

Inventor： Michael A. Huff

IPC: H01L21/30 ,  C23G1/00 ,  H01L21/44

CPC classification number: C23F4/00 ,  C23G1/103 ,  H01L21/187 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8389 ,  H01L2224/92247 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/3512

Abstract: A method of wafer or substrate bonding a substrate made of a semiconductor material with a substrate made from a metallic material is disclosed. The method allows the bonding of the two substrates together without the use of any intermediate joining gluing, or solder layer(s) between the two substrates. The method allows the moderate or low temperature bonding of the metal and semiconductor substrates, combined with methods to modify the materials so as to enable low electrical resistance interfaces to be realized between the bonded substrates, and also combined with methods to obtain a low thermal resistance interface between the bonded substrates, thereby enabling various useful improvements for fabrication, packaging and manufacturing of semiconductor devices and systems.

Abstract translation: 公开了一种将由半导体材料制成的衬底与由金属材料制成的衬底结合的晶片或衬底的方法。 该方法允许将两个基板结合在一起，而不需要在两个基板之间使用任何中间连接胶合或焊接层。 该方法允许金属和半导体衬底的中温或低温结合，以及改进材料的方法，以便在接合的衬底之间实现低电阻界面，并且还与获得低热阻的方法相结合 在接合的基板之间的界面，从而能够对半导体器件和系统的制造，封装和制造进行各种有用的改进。

公开(公告)号：US07524801B2

公开(公告)日：2009-04-28

申请号：US10652308

申请日：2003-09-02

Applicant: Emil Anton Kneer

Inventor： Emil Anton Kneer

IPC: B24B37/04

CPC classification number: H01L21/02074 ,  C09K13/00 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103 ,  H01L21/3212 ,  H01L2224/0381

Abstract: Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing a fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof or amine group containing acid.

Abstract translation: 使用包含二羧酸和/或其盐的无氟化水性组合物从表面除去含有铜镶嵌或双镶嵌特征的半导体晶片的颗粒和金属离子污染物; 和羟基羧酸和/或其盐或含有酸的酸基团。

公开(公告)号：US20080125341A1

公开(公告)日：2008-05-29

申请号：US11924138

申请日：2007-10-25

Applicant: Ashutosh MISRA ,  Matthew L. Fisher

Inventor： Ashutosh MISRA ,  Matthew L. Fisher

IPC: C11D7/32 ,  C11D7/26

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/2072 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/2096 ,  C11D3/221 ,  C11D3/28 ,  C11D3/33 ,  C11D3/3427 ,  C11D3/3472 ,  C11D3/3481 ,  C11D3/349 ,  C11D7/264 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3245 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C23G1/103

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Abstract translation: 本公开内容讨论了半导体器件制造期间晶片的化学机械平面化（CMP）之后的半导体晶片的清洁。 公开了用于后CMP清洗含有金属，特别是铜互连的晶片的酸性化学品。 剩余的浆料颗粒，特别是铜或其他金属颗粒，从晶片表面去除，而不会明显地蚀刻金属，使沉积物沉积在表面上，或者给晶片带来显着的有机（如碳）污染，同时也保护金属不被氧化， 腐蚀。 此外，存在至少一种强螯合剂以使溶液中的金属离子复合，有助于从电介质去除金属并防止再沉积到晶片上。 使用酸性化学，可以将CMP之后使用的清洗溶液的pH与在晶片表面上使用的最后一种浆料的pH相匹配。