公开(公告)号：US20050266695A1

公开(公告)日：2005-12-01

申请号：US11173788

申请日：2005-07-01

申请人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

发明人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

IPC分类号： C23F1/20 ,  C23F1/44 ,  H01L21/3213 ,  H01L21/60 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/44 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041

摘要： The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

摘要翻译： 本发明提供了一种用于在存在焊料凸块的情况下蚀刻铝表面的铝蚀刻剂溶液。 蚀刻剂溶液包括约42％至约80％的磷酸; 约0.1％至约6％的硝酸; 约5％至约40％乙酸; 约0.005％至约5％的氧化胺表面活性剂; 约0.1％至约8％的Pb增溶添加剂; 和约5至约25％的去离子水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。 还提供了一种用于在存在焊料凸块的情况下蚀刻半导体结构中的暴露的铝表面的方法，包括以下步骤：使暴露的铝表面与蚀刻剂溶液接触; 用去离子水冲洗半导体结构; 并干燥半导体结构以除去残留水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。

公开(公告)号：US06767427B2

公开(公告)日：2004-07-27

申请号：US09876451

申请日：2001-06-07

申请人： Joseph W. Walters ,  Emil Kneer ,  Eric Cooper ,  Richard Grizzard

发明人： Joseph W. Walters ,  Emil Kneer ,  Eric Cooper ,  Richard Grizzard

IPC分类号： B24B700

CPC分类号： B24B53/017 ,  H01L21/30625

摘要： A method and apparatus for conditioning a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge. The method includes providing a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge, wherein the primary edge and the secondary edge are both in contact with the polishing pad, and wherein the primary edge is generally parallel to the secondary edge. The method also includes moving the polishing pad in a forward direction, and pressing the conditioning member against the polishing pad.

摘要翻译： 描述了用于调节在半导体晶片的化学机械平面化中使用的抛光垫的方法和装置。 该装置包括配置成接合抛光垫的不可旋转的调节部件。 调理部件包括与副边缘相对的主边缘。 该方法包括提供构造成接合抛光垫的不可旋转的调节部件。 调理构件包括与副边缘相对的主边缘，其中主边缘和次边缘都与抛光垫接触，并且其中主边缘大致平行于次边缘。 该方法还包括沿前进方向移动抛光垫，并且将调节构件压靠在抛光垫上。

公开(公告)号：US07947637B2

公开(公告)日：2011-05-24

申请号：US11770382

申请日：2007-06-28

申请人： Emil Kneer

发明人： Emil Kneer

IPC分类号： C11D7/50

CPC分类号： C23G1/103 ,  C11D1/54 ,  C11D3/046 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/245 ,  C11D11/0047 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071

摘要： The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, optionally, at least one fluoride-containing compound, and, optionally, at least one corrosion inhibitor not containing a carboxyl group. The present disclosure also provides a method of cleaning residues from a semiconductor substrate using the non-corrosive cleaning composition.

摘要翻译： 本公开提供了一种非腐蚀性清洁组合物，其可用于从半导体衬底去除残余物。 该组合物可以包含水，至少一种肼基羧酸酯，至少一种水溶性羧酸，任选的至少一种含氟化物的化合物，和任选的至少一种不含羧基的腐蚀抑制剂。 本公开还提供了使用非腐蚀性清洁组合物来清洁半导体衬底的残留物的方法。

公开(公告)号：US20080004197A1

公开(公告)日：2008-01-03

申请号：US11770382

申请日：2007-06-28

申请人： Emil Kneer

发明人： Emil Kneer

IPC分类号： C23G1/00 ,  B08B3/00 ,  C23G1/02 ,  C11D3/20

CPC分类号： C23G1/103 ,  C11D1/54 ,  C11D3/046 ,  C11D3/2075 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/245 ,  C11D11/0047 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071

摘要： The present disclosure provides a non-corrosive cleaning composition that is useful for removing residues from a semiconductor substrate. The composition can comprise water, at least one hydrazinocarboxylic acid ester, at least one water soluble carboxylic acid, optionally, at least one fluoride-containing compound, and, optionally, at least one corrosion inhibitor not containing a carboxyl group. The present disclosure also provides a method of cleaning residues from a semiconductor substrate using the non-corrosive cleaning composition.

摘要翻译： 本公开提供了一种非腐蚀性清洁组合物，其可用于从半导体衬底去除残余物。 该组合物可以包含水，至少一种肼基羧酸酯，至少一种水溶性羧酸，任选的至少一种含氟化物的化合物，和任选的至少一种不含羧基的腐蚀抑制剂。 本公开还提供了使用非腐蚀性清洁组合物来清洁半导体衬底的残留物的方法。

公开(公告)号：US07147798B2

公开(公告)日：2006-12-12

申请号：US10921785

申请日：2004-08-19

申请人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

发明人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

IPC分类号： C09K13/00 ,  H01L21/302

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/44 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041

摘要： The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

摘要翻译： 本发明提供了一种用于在存在焊料凸块的情况下蚀刻铝表面的铝蚀刻剂溶液。 蚀刻剂溶液包括约42％至约80％的磷酸; 约0.1％至约6％的硝酸; 约5％至约40％乙酸; 约0.005％至约5％的氧化胺表面活性剂; 约0.1％至约8％的Pb增溶添加剂; 和约5至约25％的去离子水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。 还提供了一种用于在存在焊料凸块的情况下蚀刻半导体结构中的暴露的铝表面的方法，包括以下步骤：使暴露的铝表面与蚀刻剂溶液接触; 用去离子水冲洗半导体结构; 并干燥半导体结构以除去残留水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。

公开(公告)号：US20050040139A1

公开(公告)日：2005-02-24

申请号：US10921785

申请日：2004-08-19

申请人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

发明人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

IPC分类号： C23F1/20 ,  C23F1/44 ,  H01L21/3213 ,  H01L21/60 ,  C23F1/00

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/44 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041

摘要： The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.