Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process
    1.
    发明授权
    Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process 失效
    用于在化学机械平面化处理中调节抛光垫的装置和方法

    公开(公告)号:US06767427B2

    公开(公告)日:2004-07-27

    申请号:US09876451

    申请日:2001-06-07

    IPC分类号: B24B700

    CPC分类号: B24B53/017 H01L21/30625

    摘要: A method and apparatus for conditioning a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge. The method includes providing a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge, wherein the primary edge and the secondary edge are both in contact with the polishing pad, and wherein the primary edge is generally parallel to the secondary edge. The method also includes moving the polishing pad in a forward direction, and pressing the conditioning member against the polishing pad.

    摘要翻译: 描述了用于调节在半导体晶片的化学机械平面化中使用的抛光垫的方法和装置。 该装置包括配置成接合抛光垫的不可旋转的调节部件。 调理部件包括与副边缘相对的主边缘。 该方法包括提供构造成接合抛光垫的不可旋转的调节部件。 调理构件包括与副边缘相对的主边缘,其中主边缘和次边缘都与抛光垫接触,并且其中主边缘大致平行于次边缘。 该方法还包括沿前进方向移动抛光垫,并且将调节构件压靠在抛光垫上。

    Process control via valve position and rate of position change monitoring
    2.
    发明授权
    Process control via valve position and rate of position change monitoring 有权
    通过阀门位置和位置变化监测速率进行过程控制

    公开(公告)号:US06265231B1

    公开(公告)日:2001-07-24

    申请号:US09410189

    申请日:1999-09-30

    申请人: Joseph W. Walters

    发明人: Joseph W. Walters

    IPC分类号: H01L2100

    CPC分类号: H01L22/26

    摘要: A computer implemented method for endpointing an etch process comprising the acts of monitoring an attribute of a pressure control valve and determining an endpoint of the process based upon the monitored attribute. The monitored attribute includes the position of the pressure control valve or the rate of change of the pressure control valve. The method is advantageously employed in an in-situ cleaning process of a polymerized plasma chamber.

    摘要翻译: 一种用于终止蚀刻过程的计算机实现的方法,包括监视压力控制阀的属性并基于所监视的属性来确定过程的端点的动作。 被监控的属性包括压力控制阀的位置或压力控制阀的变化率。 该方法有利地用于聚合等离子体室的原位清洗工艺。