摘要:
A method and apparatus for conditioning a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge. The method includes providing a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge, wherein the primary edge and the secondary edge are both in contact with the polishing pad, and wherein the primary edge is generally parallel to the secondary edge. The method also includes moving the polishing pad in a forward direction, and pressing the conditioning member against the polishing pad.
摘要:
A computer implemented method for endpointing an etch process comprising the acts of monitoring an attribute of a pressure control valve and determining an endpoint of the process based upon the monitored attribute. The monitored attribute includes the position of the pressure control valve or the rate of change of the pressure control valve. The method is advantageously employed in an in-situ cleaning process of a polymerized plasma chamber.