公开(公告)号：US20050266695A1

公开(公告)日：2005-12-01

申请号：US11173788

申请日：2005-07-01

申请人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

发明人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

IPC分类号： C23F1/20 ,  C23F1/44 ,  H01L21/3213 ,  H01L21/60 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/44 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041

摘要： The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

摘要翻译： 本发明提供了一种用于在存在焊料凸块的情况下蚀刻铝表面的铝蚀刻剂溶液。 蚀刻剂溶液包括约42％至约80％的磷酸; 约0.1％至约6％的硝酸; 约5％至约40％乙酸; 约0.005％至约5％的氧化胺表面活性剂; 约0.1％至约8％的Pb增溶添加剂; 和约5至约25％的去离子水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。 还提供了一种用于在存在焊料凸块的情况下蚀刻半导体结构中的暴露的铝表面的方法，包括以下步骤：使暴露的铝表面与蚀刻剂溶液接触; 用去离子水冲洗半导体结构; 并干燥半导体结构以除去残留水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。

公开(公告)号：US07147798B2

公开(公告)日：2006-12-12

申请号：US10921785

申请日：2004-08-19

申请人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

发明人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

IPC分类号： C09K13/00 ,  H01L21/302

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/44 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041

摘要： The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.

摘要翻译： 本发明提供了一种用于在存在焊料凸块的情况下蚀刻铝表面的铝蚀刻剂溶液。 蚀刻剂溶液包括约42％至约80％的磷酸; 约0.1％至约6％的硝酸; 约5％至约40％乙酸; 约0.005％至约5％的氧化胺表面活性剂; 约0.1％至约8％的Pb增溶添加剂; 和约5至约25％的去离子水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。 还提供了一种用于在存在焊料凸块的情况下蚀刻半导体结构中的暴露的铝表面的方法，包括以下步骤：使暴露的铝表面与蚀刻剂溶液接触; 用去离子水冲洗半导体结构; 并干燥半导体结构以除去残留水; 其中在蚀刻之后，焊料凸块基本上不含磷酸盐。

公开(公告)号：US20050040139A1

公开(公告)日：2005-02-24

申请号：US10921785

申请日：2004-08-19

申请人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

发明人： Frank Gonzalez ,  Emil Kneer ,  Michelle Elderkin ,  Vince Leon

IPC分类号： C23F1/20 ,  C23F1/44 ,  H01L21/3213 ,  H01L21/60 ,  C23F1/00

CPC分类号： H01L21/32134 ,  C23F1/20 ,  C23F1/44 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041

摘要： The present invention provides an aluminum etchant solution for etching an aluminum surface in the presence of solder bumps. The etchant solution includes about 42% to about 80% phosphoric acid; about 0.1% to about 6% nitric acid; about 5% to about 40% acetic acid; about 0.005% to about 5% of an amine oxide surfactant; about 0.1% to about 8% of a Pb solubilizing additive; and about 5 to about 25% de-ionized water; wherein the solder bumps are substantially phosphate free after the etching. Also provided is a process for etching an exposed aluminum surface in a semiconductor structure in the presence of solder bumps including the steps of: contacting the exposed aluminum surface with the etchant solution; rinsing the semiconductor structure with de-ionized water; and drying the semiconductor structure to remove residual water; wherein the solder bumps are substantially phosphate free after the etching.