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公开(公告)号：US12116376B2
公开(公告)日：2024-10-15
申请号：US18097406
申请日：2023-01-16
摘要： Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
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公开(公告)号：US20240304492A1
公开(公告)日：2024-09-12
申请号：US18667082
申请日：2024-05-17
发明人： Hui CHEN , Xinning LUAN , Kirk Allen FISHER , Shawn Joseph BONHAM , Aimee S. ERHARDT , Zhepeng CONG , Shaofeng CHEN , Schubert S. CHU , James M. AMOS , Philip Michael AMOS , John NEWMAN
IPC分类号： H01L21/687 , C23C16/32 , C23C16/458
CPC分类号： H01L21/68757 , C23C16/325 , C23C16/4583
摘要： A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.
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公开(公告)号：US20240290611A1
公开(公告)日：2024-08-29
申请号：US18609238
申请日：2024-03-19
发明人： Bo Xie , Kang S. Yim , Yijun Liu , Li-Qun Xia , Ruitong Xiong
CPC分类号： H01L21/02126 , C23C16/325 , H01L21/02167 , H01L21/02274 , H01L21/02205 , H01L21/02211 , H01L21/02216
摘要： Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.
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公开(公告)号：US20240287673A1
公开(公告)日：2024-08-29
申请号：US18649133
申请日：2024-04-29
CPC分类号： C23C16/24 , B01D15/22 , C23C16/045 , C23C16/325 , C23C16/401 , C23C16/403 , C23C16/405 , C23C16/44 , C23C16/45555 , Y10T428/13
摘要： The invention provides metal liquid chromatography components with uniformly coated internal surfaces and methods for achieving the same. The invention addresses the problem of corrosion or interference of metal components in the flow path for LC analyses in which the sample interacts with metal ions or surfaces. The invention also alleviates the difficulties in coating very long metal tubes and very small metal channels with an inert, continuous coating that adheres well to metal surfaces. The metal flow path is rendered inert by the coating, and thus compatible with bioanalytical separations, for example, by using a vapor phase deposition process to coat the inner surfaces with a coating that continuously covers all metal surfaces in the flow path.
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公开(公告)号：US20240282632A1
公开(公告)日：2024-08-22
申请号：US18109365
申请日：2023-02-14
发明人： Zachary J. Devereaux , Bhaskar Jyoti Bhuyan , Thomas Joseph Knisley , Zeqing Shen , Susmit Singha Roy , Mark J. Saly , Abhijit Basu Mallick
IPC分类号： H01L21/768 , C23C16/04 , C23C16/32 , C23C16/40 , C23C16/455 , H01L21/02
CPC分类号： H01L21/76897 , C23C16/042 , C23C16/32 , C23C16/402 , C23C16/45527 , H01L21/02126 , H01L21/02164 , H01L21/0228 , H01L21/02304 , H01L21/76802
摘要： A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.
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公开(公告)号：US20240271273A1
公开(公告)日：2024-08-15
申请号：US18636677
申请日：2024-04-16
发明人： Ichiro MIZUSHIMA , Shigeaki ISHII
CPC分类号： C23C16/0227 , C23C16/325 , C23C16/4405 , C23C16/4412 , C23C16/46 , H01L21/02041
摘要： A vapor phase growth method of an embodiment is a vapor phase growth method using a vapor phase growth apparatus including a reactor, an exhaust pump, a pressure control valve, and an exhaust pipe. The vapor phase growth method includes: loading a first substrate into the reactor, heating the first substrate, supplying a process gas, and forming a silicon carbide film on a surface of the first substrate and depositing a by-product containing carbon in the first portion or the second portion by adjusting a pressure in the reactor by controlling the pressure control valve; unloading the first substrate from the reactor; removing the by-product by supplying a gas including a gas containing fluorine to the exhaust pipe by controlling a pressure in the exhaust pipe; and then loading a second substrate into the reactor to form a silicon carbide film on a surface of the second substrate.
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公开(公告)号：US12014925B2
公开(公告)日：2024-06-18
申请号：US17330035
申请日：2021-05-25
IPC分类号： H01L21/033 , C23C16/30 , C23C16/32 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/311
CPC分类号： H01L21/0332 , C23C16/30 , C23C16/32 , C23C16/50 , H01J37/32449 , H01J37/32816 , H01L21/02115 , H01L21/02274 , H01J2237/332 , H01L21/02205 , H01L21/31122 , H01L21/31144
摘要： Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.
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公开(公告)号：US11967498B2
公开(公告)日：2024-04-23
申请号：US16914960
申请日：2020-06-29
发明人： Bo Xie , Kang S. Yim , Yijun Liu , Li-Qun Xia , Ruitong Xiong
CPC分类号： H01L21/02126 , C23C16/325 , H01L21/02167 , H01L21/02274 , H01L21/02205 , H01L21/02211 , H01L21/02216
摘要： Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.
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公开(公告)号：US11932942B2
公开(公告)日：2024-03-19
申请号：US17842205
申请日：2022-06-16
CPC分类号： C23C16/545 , C04B35/62863 , C04B35/62868 , C04B35/62873 , C04B35/62884 , C04B35/80 , C23C16/26 , C23C16/325 , C23C16/342 , C23C16/46 , C04B2235/5244 , C04B2235/5248
摘要： A process for depositing a coating on a continuous fibre of carbon or silicon carbide from a precursor of the coating, includes heating a segment of the fibre in the presence of the coating precursor in a microwave field so as to bring the surface of the segment to a temperature allowing the coating to form on the segment from the coating precursor, wherein the segment of fibre is in the presence of a supercritical phase of the precursor of the coating in the reactor and the coating is formed by supercritical phase chemical deposition in the reactor.
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公开(公告)号：US11914328B2
公开(公告)日：2024-02-27
申请号：US16418023
申请日：2019-05-21
申请人： ROLEX SA
IPC分类号： G04B17/06 , C23C16/40 , C23C16/455 , C23C16/32 , C23C16/34
CPC分类号： G04B17/066 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/45525 , Y10T428/24942
摘要： A method for treating a surface (2) of a base (1) of a timepiece component (10), in particular a balance spring, e.g. a balance spring made of a paramagnetic NbZr alloy, includes: a first step of depositing a first layer (41) of a first oxide or first nitride or first carbide; and a second step of depositing a second layer (51) of a second oxide or second nitride or second carbide.
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