公开(公告)号：US20240052521A1

公开(公告)日：2024-02-15

申请号：US18492482

申请日：2023-10-23

申请人： Applied Materials, Inc.

发明人： Yen Lin LEOW ,  Xinning LUAN ,  Hui CHEN ,  Kirk Allen FISHER ,  Shawn THOMAS

IPC分类号： C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

CPC分类号： C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

摘要： Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

公开(公告)号：US20240014065A1

公开(公告)日：2024-01-11

申请号：US17860891

申请日：2022-07-08

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Balakrishnam R. JAMPANA ,  Masato ISHII ,  Shawn Joseph BONHAM ,  James M. AMOS ,  Kirk Allen FISHER ,  Philip Michael AMOS ,  Cathryne A. RYAN ,  Aimee S. ERHARDT ,  Xinning LUAN ,  Hui CHEN

IPC分类号： H01L21/687

CPC分类号： H01L21/68757 ,  H01L21/68785

摘要： A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a susceptor ledge on an outer circumferential edge of a front side of the susceptor substrate, wherein a pocket within the susceptor ledge is configured to hold a wafer to be processed in a processing chamber, and a coating layer deposited on the susceptor substrate, wherein a surface of the susceptor ledge is textured with a plurality of venting groove lines, a surface of the pocket is textured with a first pattern, and a surface of a back side of the susceptor substrate opposite the front side is textured with a second pattern.

公开(公告)号：US20230114751A1

公开(公告)日：2023-04-13

申请号：US17450418

申请日：2021-10-08

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Nyi Oo MYO ,  Hui CHEN ,  Huy D. NGUYEN ,  Shaofeng CHEN ,  Xinning LUAN ,  Kirk Allen FISHER ,  Aimee S. ERHARDT ,  Shawn Joseph BONHAM ,  Philip Michael AMOS ,  James M. AMOS

IPC分类号： C23C16/458

摘要： A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.

公开(公告)号：US20220364263A1

公开(公告)日：2022-11-17

申请号：US17731414

申请日：2022-04-28

申请人： Applied Materials, Inc.

发明人： Shawn Joseph BONHAM ,  Xinning LUAN ,  Hui CHEN ,  James M. AMOS ,  John NEWMAN ,  Kirk Allen FISHER ,  Aimee S. ERHARDT ,  Philip Michael AMOS ,  Zhiyuan YE ,  Shu-Kwan LAU ,  Lori D. WASHINGTON

IPC分类号： C30B25/12 ,  C23C16/458

摘要： Systems and apparatus for a reduced mass substrate support are disclosed, according to certain embodiments. A front side pocket is provided for support of a substrate, while a backside pocket is provided that reduces the mass of the substrate support. By providing the backside pocket, the mass of the overall substrate support is reduced, providing faster thermal cycling times for the substrate support and reducing the weight of the substrate support for transport. Lift pin systems, according to disclosed embodiments, are compatible with existing pedestal systems by providing a hollow extension from each lift pin hole that extends from a bottom of the backside pocket to provide support for lift pin insertion and operation.

公开(公告)号：US20240145281A1

公开(公告)日：2024-05-02

申请号：US18050384

申请日：2022-10-27

申请人： Applied Materials, Inc.

发明人： Martin Jeffrey SALINAS ,  Zhepeng CONG ,  Hui CHEN ,  Xinning LUAN ,  Ashur J. ATANOS

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67294 ,  H01L21/67259 ,  H01L21/68785

摘要： An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus coupled to the process chamber to provide information related to the substrate support via imaging when the substrate support is disposed within the process chamber.

公开(公告)号：US20220220635A1

公开(公告)日：2022-07-14

申请号：US17146572

申请日：2021-01-12

申请人： Applied Materials, Inc.

发明人： Yen Lin LEOW ,  Xinning LUAN ,  Hui CHEN ,  Kirk Allen FISHER ,  Shawn THOMAS

IPC分类号： C30B25/16 ,  C30B29/36 ,  C30B25/10 ,  C30B25/18 ,  C30B29/68

摘要： Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

公开(公告)号：US20170274497A1

公开(公告)日：2017-09-28

申请号：US15456320

申请日：2017-03-10

申请人： Applied Materials, Inc.

发明人： Eric LAU ,  Hui CHEN ,  King Yi HEUNG ,  Wei-Cheng LEE ,  Chih Chung CHOU ,  Edwin C. SUAREZ ,  Garrett Ho Yee SIN ,  Charles C. GARRETSON ,  Jeonghoon OH

IPC分类号： B24B37/26 ,  B24B37/30

CPC分类号： B24B37/26 ,  B24B37/30

摘要： A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

公开(公告)号：US20150027491A1

公开(公告)日：2015-01-29

申请号：US13951913

申请日：2013-07-26

申请人： Applied Materials, Inc.

发明人： Clinton SAKATA ,  Hui CHEN ,  Jim K. ATKINSON ,  Tomohiko KITAJIMA ,  Brian J. BROWN

IPC分类号： H01L21/67

CPC分类号： H01L21/67046

摘要： A buff module and method for using the same are provided. In one embodiment, a buff module includes housing having an interior volume, a plurality of drive rollers and a pair of buff heads. The drive rollers are arranged to rotate a substrate within the interior volume on a substantially horizontal axis. The buff heads are disposed in the housing, each buff head rotatable on an axis substantially aligned with the horizontal axis and movable to a position substantially parallel with the horizontal axis.

摘要翻译： 提供了一种buff模块及其使用方法。 在一个实施例中，抛光模块包括具有内部容积的壳体，多个驱动辊和一对抛光头。 驱动辊被布置成在基本上水平的轴线上旋转内部容积内的基板。 抛光头设置在壳体中，每个抛光头可在与水平轴线基本上对准的轴上旋转并且可移动到基本上与水平轴线平行的位置。

公开(公告)号：US20140261539A1

公开(公告)日：2014-09-18

申请号：US14198150

申请日：2014-03-05

申请人： Applied Materials, Inc.

发明人： Hui CHEN ,  Sen-Hou KO

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/02065 ,  B08B1/002 ,  B08B1/006 ,  B08B1/04 ,  B08B3/10 ,  H01L21/02041 ,  H01L21/02087 ,  H01L21/31053 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67178 ,  H01L21/67219 ,  H01L21/68764

摘要： A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and space apart relation, the first pad holder rotatable on a second axis rotatable parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance defined between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, wherein the second pad holder is couple with a rotary arm.

摘要翻译： 提供了一种用于在化学机械平面化（CMP）之后清洁衬底的方法和设备。 该装置包括壳体，可在第一轴线上旋转并被配置为将基片保持在基本垂直取向的衬底保持器，第一衬垫保持器具有以平行且间隔开的关系面对衬底保持器的衬垫保持表面，第一衬垫 保持器可在平行于第一轴线旋转的第二轴线上旋转，第一致动器可操作以相对于衬底保持器移动衬垫保持器以改变限定在第一轴线和第二轴线之间的距离，以及设置在壳体中的第二衬垫保持架 ，所述第二焊盘保持器具有以平行和间隔的关系面对所述衬底保持器的焊盘保持表面，其中所述第二焊盘保持器与旋转臂耦合。

公开(公告)号：US20240363390A1

公开(公告)日：2024-10-31

申请号：US18540680

申请日：2023-12-14

申请人： Applied Materials, Inc.

发明人： Xinning LUAN ,  Shawn THOMAS ,  Hui CHEN

IPC分类号： H01L21/687 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC分类号： H01L21/68735 ,  C23C16/4586 ,  C30B25/10 ,  C30B25/12 ,  H01L21/68742

摘要： The present disclosure relates to gas flow substrate supports, processing chambers, and related methods and apparatus, for semiconductor manufacturing. In one or more embodiments, a substrate support applicable for semiconductor manufacturing includes a first outer surface, a ledge disposed inwardly of the first outer surface and recessed relative to the first outer surface, and a pocket defining a pocket surface that is disposed inwardly of the ledge and recessed relative to the ledge. The substrate support includes a plurality of first flow openings extending into the pocket surface, a plurality of second flow openings extending into the ledge, and a plurality of third flow openings extending into the first outer surface.