公开(公告)号：US20220349088A1

公开(公告)日：2022-11-03

申请号：US17243158

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO ,  Tao SHENG ,  Yong ZHENG

IPC: C30B25/16 ,  C30B23/00 ,  C30B25/12 ,  C30B25/10 ,  C30B23/06 ,  C23C14/54 ,  C23C16/46 ,  C23C16/52 ,  C23C16/458 ,  C23C14/50 ,  G01N21/55

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US20240318351A1

公开(公告)日：2024-09-26

申请号：US18733504

申请日：2024-06-04

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Shu-Kwan LAU ,  Brian BURROWS ,  Lori D. WASHINGTON ,  Herman DINIZ ,  Martin A. HILKENE ,  Richard O. COLLINS ,  Nyi Oo MYO ,  Manish HEMKAR ,  Schubert S. CHU

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US20230167581A1

公开(公告)日：2023-06-01

申请号：US17919896

申请日：2021-07-16

Applicant: Applied Materials, Inc.

Inventor： Kartik Bhupendra SHAH ,  Schubert S. CHU ,  Adel George TANNOUS ,  Ala MORADIAN ,  Nyi Oo MYO ,  Surajit KUMAR ,  Zuoming ZHU ,  Brian Hayes BURROWS ,  Vishwas Kumar PANDEY ,  Shu-Kwan LAU ,  Srinivasa RANGAPPA

IPC: C30B25/10 ,  H01L21/687 ,  H01L21/67 ,  C30B25/18 ,  C30B25/08 ,  C23C16/02

CPC classification number: C30B25/105 ,  H01L21/68771 ,  H01L21/68764 ,  H01L21/67248 ,  H01L21/68757 ,  C30B25/186 ,  C30B25/08 ,  C23C16/0209 ,  C23C16/0227

Abstract: A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.

公开(公告)号：US20250066918A1

公开(公告)日：2025-02-27

申请号：US18943136

申请日：2024-11-11

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA ,  Zuoming ZHU ,  Zhiyuan YE ,  Joseph M. RANISH ,  Nyi Oo MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: C23C16/46 ,  B23K26/00 ,  B23K26/03 ,  B23K26/06 ,  B23K26/08 ,  B23K26/12 ,  B23K26/352 ,  C23C16/52 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US20220262658A1

公开(公告)日：2022-08-18

申请号：US17178204

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/458

Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes an inner region having a pattern formed in a top surface thereof, the pattern including a plurality of substrate support features separated by a plurality of venting channels. The susceptor includes a rim surrounding and coupled to the inner region, wherein the inner region is recessed relative to the rim to form a recessed pocket configured to receive a substrate. The susceptor includes a plurality of bumps extending radially inward from an inner diameter of the rim, the plurality of bumps configured to contact an outer edge of a substrate supported by the plurality of substrate support features for positioning the substrate within the recessed pocket.

公开(公告)号：US20240410078A1

公开(公告)日：2024-12-12

申请号：US18805150

申请日：2024-08-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO ,  Tao SHENG ,  Yong ZHENG

IPC: C30B25/16 ,  B41J2/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01B11/06 ,  G01N21/55 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US20220325400A1

公开(公告)日：2022-10-13

申请号：US17224537

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Schubert CHU ,  Nyi Oo MYO ,  Karlik Bhupendra SHAH ,  Zhiyuan YE ,  Richard O. COLLINS

IPC: C23C14/24 ,  H01L21/67 ,  C23C14/50

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

公开(公告)号：US20240044004A1

公开(公告)日：2024-02-08

申请号：US18381543

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA ,  Zuoming ZHU ,  Zhiyuan YE ,  Joseph M. RANISH ,  Nyi Oo MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52 ,  B23K26/352

CPC classification number: C23C16/46 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68785 ,  B23K26/0006 ,  B23K26/128 ,  B23K26/0604 ,  B23K26/034 ,  B23K26/08 ,  C23C16/52 ,  H01L21/68742 ,  B23K26/352 ,  H01L21/6719 ,  B23K26/127 ,  B23K26/126 ,  B23K26/032 ,  B23K26/123 ,  H01L21/68757

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US20240026522A1

公开(公告)日：2024-01-25

申请号：US18479297

申请日：2023-10-02

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Schubert CHU ,  Nyi Oo MYO ,  Kartik Bhupendra SHAH ,  Zhiyuan YE ,  Richard O. COLLINS

IPC: C23C14/24 ,  C23C14/50 ,  H01L21/67

CPC classification number: C23C14/24 ,  C23C14/50 ,  H01L21/67017

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

公开(公告)号：US20230114751A1

公开(公告)日：2023-04-13

申请号：US17450418

申请日：2021-10-08

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO ,  Hui CHEN ,  Huy D. NGUYEN ,  Shaofeng CHEN ,  Xinning LUAN ,  Kirk Allen FISHER ,  Aimee S. ERHARDT ,  Shawn Joseph BONHAM ,  Philip Michael AMOS ,  James M. AMOS

IPC: C23C16/458

Abstract: A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.