公开(公告)号：US20210265416A1

公开(公告)日：2021-08-26

申请号：US16797807

申请日：2020-02-21

申请人： Applied Materials, Inc.

发明人： Papo CHEN ,  Schubert CHU ,  Errol Antonio C SANCHEZ ,  John Timothy BOLAND ,  Zhiyuan YE ,  Lori WASHINGTON ,  Xianzhi TAO ,  Yi-Chiau HUANG ,  Chen-Ying WU

IPC分类号： H01L27/146 ,  H01L31/18

摘要： A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

公开(公告)号：US20200266068A1

公开(公告)日：2020-08-20

申请号：US16784460

申请日：2020-02-07

申请人： Applied Materials, Inc.

发明人： Xuebin LI ,  Wei LIU ,  Gaurav THAREJA ,  Shashank SHARMA ,  Patricia M. LIU ,  Schubert CHU

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01L29/40 ,  H01L21/67

摘要： Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

公开(公告)号：US20230243068A1

公开(公告)日：2023-08-03

申请号：US18131255

申请日：2023-04-05

申请人： Applied Materials, Inc.

发明人： Errol Antonio C. SANCHEZ ,  Mark J. SALY ,  Schubert CHU ,  Abhishek DUBE ,  Srividya NATARAJAN

IPC分类号： C30B29/54 ,  H01L21/02 ,  C07F9/50 ,  C30B25/02 ,  H01L29/08

CPC分类号： C30B29/54 ,  H01L21/02521 ,  C07F9/5009 ,  C30B25/02 ,  H01L21/0262 ,  H01L29/0843

摘要： Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR′z, where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

公开(公告)号：US20220325400A1

公开(公告)日：2022-10-13

申请号：US17224537

申请日：2021-04-07

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Schubert CHU ,  Nyi Oo MYO ,  Karlik Bhupendra SHAH ,  Zhiyuan YE ,  Richard O. COLLINS

IPC分类号： C23C14/24 ,  H01L21/67 ,  C23C14/50

摘要： Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

公开(公告)号：US20220005705A1

公开(公告)日：2022-01-06

申请号：US17477808

申请日：2021-09-17

申请人： Applied Materials, Inc.

发明人： Xuebin LI ,  Wei LIU ,  Gaurav THAREJA ,  Shashank SHARMA ,  Patricia M. LIU ,  Schubert CHU

IPC分类号： H01L21/321 ,  H01L21/285 ,  H01L21/768 ,  H01L21/67 ,  H01L29/40 ,  H01L21/02 ,  H01L23/532 ,  H01L21/8234 ,  H01L21/3205 ,  H01L29/417

摘要： Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

公开(公告)号：US20240026522A1

公开(公告)日：2024-01-25

申请号：US18479297

申请日：2023-10-02

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Schubert CHU ,  Nyi Oo MYO ,  Kartik Bhupendra SHAH ,  Zhiyuan YE ,  Richard O. COLLINS

IPC分类号： C23C14/24 ,  C23C14/50 ,  H01L21/67

CPC分类号： C23C14/24 ,  C23C14/50 ,  H01L21/67017

摘要： Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

公开(公告)号：US20220005704A1

公开(公告)日：2022-01-06

申请号：US17477741

申请日：2021-09-17

申请人： Applied Materials, Inc.

发明人： Xuebin LI ,  Wei LIU ,  Gaurav THAREJA ,  Shashank SHARMA ,  Patricia M. LIU ,  Schubert CHU

IPC分类号： H01L21/321 ,  H01L21/285 ,  H01L21/768 ,  H01L21/67 ,  H01L29/40 ,  H01L21/02 ,  H01L23/532 ,  H01L21/8234 ,  H01L21/3205 ,  H01L29/417

摘要： Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

公开(公告)号：US20200040451A1

公开(公告)日：2020-02-06

申请号：US16521826

申请日：2019-07-25

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Schubert CHU ,  Nyi O. MYO ,  Kartik SHAH ,  Surajit KUMAR

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/458 ,  C30B25/08

摘要： Embodiments herein relate to chamber liners with a multi-piece design for use in processing chambers. The multi-piece design can have an inner portion and an outer portion. A portion of the inner surface of the outer portion may be designed to be in contact with the outer surface of the inner portion at a single junction point, creating a thermal barrier between the inner portion and outer portion, thus reducing heat transfer from the inner portion and outer portion. The thermal barrier creates higher temperatures at the chamber liner inner surface and therefore leads to shorter heat up times within the chamber. Additionally, the thermal barrier also creates lower temperatures near the base ring and outer surface of the outer ring, thereby protecting the chamber walls and requiring less thermal regulation/dissipation at the chamber walls.