- 专利标题： METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION
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申请号： US17477808申请日： 2021-09-17
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公开(公告)号： US20220005705A1公开(公告)日： 2022-01-06
- 发明人: Xuebin LI , Wei LIU , Gaurav THAREJA , Shashank SHARMA , Patricia M. LIU , Schubert CHU
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/321
- IPC分类号： H01L21/321 ; H01L21/285 ; H01L21/768 ; H01L21/67 ; H01L29/40 ; H01L21/02 ; H01L23/532 ; H01L21/8234 ; H01L21/3205 ; H01L29/417
摘要：
Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.
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