公开(公告)号：US20220028656A1

公开(公告)日：2022-01-27

申请号：US16939898

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Vladimir NAGORNY ,  Wei LIU ,  Theresa Kramer GUARINI ,  Bernard L. HWANG ,  Malcolm J. BEVAN ,  Jacob ABRAHAM ,  Swayambhu Prasad BEHERA

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

公开(公告)号：US20220005705A1

公开(公告)日：2022-01-06

申请号：US17477808

申请日：2021-09-17

Applicant: Applied Materials, Inc.

Inventor： Xuebin LI ,  Wei LIU ,  Gaurav THAREJA ,  Shashank SHARMA ,  Patricia M. LIU ,  Schubert CHU

IPC: H01L21/321 ,  H01L21/285 ,  H01L21/768 ,  H01L21/67 ,  H01L29/40 ,  H01L21/02 ,  H01L23/532 ,  H01L21/8234 ,  H01L21/3205 ,  H01L29/417

Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

公开(公告)号：US20170365512A1

公开(公告)日：2017-12-21

申请号：US15438490

申请日：2017-02-21

Applicant: Applied Materials, Inc.

Inventor： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA ,  Shankar MUTHUKRISHNAN ,  Rene GEORGE

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76856 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/7685 ,  H01L21/76889

Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.

公开(公告)号：US20250132147A1

公开(公告)日：2025-04-24

申请号：US18922507

申请日：2024-10-22

Applicant: Applied Materials, Inc.

Inventor： Jae Young PARK ,  Wei LIU ,  Minghang LI ,  Moon Hee SEO ,  Dileep Venkata Sai VADLADI ,  Sahil TAHILIANI ,  Sandip NIYOGI ,  Dimitrios PAVLOPOULOS ,  Amit JAIN ,  Vladimir NAGORNY ,  Victor CALDERON ,  Edric TONG ,  Rene GEORGE

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.

公开(公告)号：US20250069859A1

公开(公告)日：2025-02-27

申请号：US18468790

申请日：2023-09-18

Applicant: Applied Materials, Inc.

Inventor： Edric H. TONG ,  Wei LIU ,  Victor CALDERON ,  Rene GEORGE ,  Dileep Venkata Sai VADLADI ,  Vladimir NAGORNY

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to high efficiency inductively coupled plasma sources and plasma processing apparatus. Specifically, embodiments relate to grids to improve plasma uniformity. In one embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. The grid is coupled to the grid support and disposed above the substrate support. The grid has a plurality of holes and one or more outer openings defined between a circumference of the grid and the grid support. Plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid towards the substrate support.

公开(公告)号：US20240192055A1

公开(公告)日：2024-06-13

申请号：US18581626

申请日：2024-02-20

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Lara HAWRYLCHAK ,  Malcolm J. BEVAN ,  Theresa Kramer GUARINI ,  Wei LIU ,  Bernard L. HWANG

IPC: G01J3/28 ,  G01J3/02 ,  G01J3/10 ,  G01J3/443

CPC classification number: G01J3/28 ,  G01J3/0218 ,  G01J3/10 ,  G01J3/443 ,  G01J2003/2879

Abstract: One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

公开(公告)号：US20240170263A1

公开(公告)日：2024-05-23

申请号：US18521948

申请日：2023-11-28

Applicant: Applied Materials, Inc.

Inventor： Wei LIU ,  Vladimir NAGORNY ,  Rene GEORGE

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/0228 ,  H01J2237/334

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.

公开(公告)号：US20220178747A1

公开(公告)日：2022-06-09

申请号：US17604814

申请日：2020-03-27

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Lara HAWRYLCHAK ,  Malcolm J. BEVAN ,  Theresa Kramer GUARINI ,  Wei LIU ,  Bernard L. HWANG

IPC: G01J3/10 ,  G01J3/443 ,  G01J3/02

Abstract: One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

公开(公告)号：US20210287900A1

公开(公告)日：2021-09-16

申请号：US16817378

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yixiong YANG ,  Wei LIU ,  Yuan-hui LO ,  Srinivas GANDIKOTA ,  Jacqueline Samantha WRENCH ,  Yongjing LIN ,  Wen Ting CHEN ,  ShihChung CHEN

IPC: H01L21/02

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.

公开(公告)号：US20200266068A1

公开(公告)日：2020-08-20

申请号：US16784460

申请日：2020-02-07

Applicant: Applied Materials, Inc.

Inventor： Xuebin LI ,  Wei LIU ,  Gaurav THAREJA ,  Shashank SHARMA ,  Patricia M. LIU ,  Schubert CHU

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01L29/40 ,  H01L21/67

Abstract: Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.