公开(公告)号：US20170365512A1

公开(公告)日：2017-12-21

申请号：US15438490

申请日：2017-02-21

申请人： Applied Materials, Inc.

发明人： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA ,  Shankar MUTHUKRISHNAN ,  Rene GEORGE

IPC分类号： H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76856 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/7685 ,  H01L21/76889

摘要： Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.

公开(公告)号：US20180082847A1

公开(公告)日：2018-03-22

申请号：US15822435

申请日：2017-11-27

申请人： Applied Materials, Inc.

发明人： Wei LIU ,  Theresa Kramer GUARINI ,  Huy Q. NGUYEN ,  Malcolm BEVAN ,  Houda GRAOUI ,  Philip A. BOTTINI ,  Bernard L. HWANG ,  Lara HAWRYLCHAK ,  Rene GEORGE

IPC分类号： H01L21/28 ,  H01J37/32 ,  H01L21/3105 ,  H01L29/51

CPC分类号： H01L21/28176 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01L21/3105 ,  H01L29/517

摘要： Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

公开(公告)号：US20160358781A1

公开(公告)日：2016-12-08

申请号：US15171001

申请日：2016-06-02

申请人： Applied Materials, Inc.

发明人： Wei LIU ,  Theresa Kramer GUARINI ,  Huy Q. NGUYEN ,  Malcolm BEVAN ,  Houda GRAOUI ,  Philip A. BOTTINI ,  Bernard L. HWANG ,  Lara HAWRYLCHAK ,  Rene GEORGE

IPC分类号： H01L21/28 ,  H01L21/67 ,  H01L21/3105

CPC分类号： H01L21/28176 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01L21/3105 ,  H01L29/517

摘要： Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

摘要翻译： 本文描述的实施例一般涉及用于等离子体处理处理室的方法和装置。 其上形成有栅极叠层的基板可以放置在处理室中，并且可以使用含氢等离子体来处理栅极堆叠，以便固化栅极堆叠中的缺陷。 作为含氢等离子体处理的结果，栅极堆叠具有较低的泄漏和改进的可靠性。 为了保护处理室免受由含氢等离子体产生的Hx +离子和H *基团的影响，处理室可以用等离子体处理，而不需要将基板放置在其中并且在含氢等离子体处理之前。 此外，由介电材料制成的处理室的部件可以涂覆有包含含钇的氧化物的陶瓷涂层，以保护组分免受等离子体的影响。

公开(公告)号：US20190157143A1

公开(公告)日：2019-05-23

申请号：US16260084

申请日：2019-01-28

申请人： Applied Materials, Inc.

发明人： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA ,  Shankar MUTHUKRISHNAN ,  Rene GEORGE

IPC分类号： H01L21/768 ,  H01L21/285

摘要： Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.

公开(公告)号：US20190115219A1

公开(公告)日：2019-04-18

申请号：US16159461

申请日：2018-10-12

申请人： Applied Materials, Inc.

发明人： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA

IPC分类号： H01L21/28 ,  H01L29/45 ,  H01L21/285 ,  H01L21/02 ,  H01L21/321 ,  H01L21/324 ,  H01L29/40

CPC分类号： H01L21/28255 ,  H01L21/02186 ,  H01L21/0234 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28575 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76862 ,  H01L29/401 ,  H01L29/45 ,  H01L29/452

摘要： Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.

公开(公告)号：US20150311067A1

公开(公告)日：2015-10-29

申请号：US14261017

申请日：2014-04-24

申请人： Applied Materials, Inc.

发明人： Shashank SHARMA ,  Jau-Jiun CHEN ,  Wolfgang R. ADERHOLD ,  Kai NG ,  Houda GRAOUI ,  Shankar MUTHUKRISHNAN ,  Abhilash J. MAYUR ,  Gia PHAM

IPC分类号： H01L21/02

CPC分类号： H01L21/02337 ,  H01L21/02332 ,  H01L21/02345 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/28202

摘要： Embodiments of the present disclosure relate to methods for processing a substrate. In one embodiment, the method includes forming a dielectric layer over a substrate, wherein the dielectric layer has a dielectric value of about 3.9 or greater, heating the substrate to a first temperature of about 600 degrees Celsius or less by a heater of a substrate support disposed within a process chamber, and incorporating nitrogen into the dielectric layer in the process chamber by annealing the dielectric layer at a second temperature between about 650 and about 1450 degrees Celsius in an ambient nitrogen environment, wherein the annealing is performed on the order of millisecond scale.

摘要翻译： 本公开的实施例涉及用于处理衬底的方法。 在一个实施例中，该方法包括在衬底上形成电介质层，其中电介质层的电介质值约为3.9或更大，通过衬底支撑件的加热器将衬底加热至约600摄氏度或更低的第一温度 设置在处理室内，并且通过在环境氮环境中在约650℃和约1450摄氏度之间的第二温度下退火介电层，将氮气并入处理室中的介电层中，其中退火是在毫秒级 规模。

公开(公告)号：US20190287805A1

公开(公告)日：2019-09-19

申请号：US16421804

申请日：2019-05-24

申请人： Applied Materials, Inc.

发明人： Steven C. H. HUNG ,  Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI

IPC分类号： H01L21/28 ,  H01L21/321 ,  H01L29/49

摘要： A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.

公开(公告)号：US20180218911A1

公开(公告)日：2018-08-02

申请号：US15874132

申请日：2018-01-18

申请人： Applied Materials, Inc.

发明人： Steven C. H. HUNG ,  Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI

IPC分类号： H01L21/28 ,  H01L21/321 ,  H01L29/49

CPC分类号： H01L21/28088 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/67017 ,  H01L21/67167 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.

公开(公告)号：US20170365480A1

公开(公告)日：2017-12-21

申请号：US15442311

申请日：2017-02-24

申请人： Applied Materials, Inc.

发明人： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA

IPC分类号： H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L29/40 ,  H01L21/324

CPC分类号： H01L21/28255 ,  H01L21/02186 ,  H01L21/0234 ,  H01L21/3212 ,  H01L21/324 ,  H01L29/401

摘要： Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.