公开(公告)号：US20220028656A1

公开(公告)日：2022-01-27

申请号：US16939898

申请日：2020-07-27

申请人： Applied Materials, Inc.

发明人： Kin Pong LO ,  Vladimir NAGORNY ,  Wei LIU ,  Theresa Kramer GUARINI ,  Bernard L. HWANG ,  Malcolm J. BEVAN ,  Jacob ABRAHAM ,  Swayambhu Prasad BEHERA

IPC分类号： H01J37/32 ,  H01L21/67 ,  C23C16/455

摘要： Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

公开(公告)号：US20240192055A1

公开(公告)日：2024-06-13

申请号：US18581626

申请日：2024-02-20

申请人： Applied Materials, Inc.

发明人： Kin Pong LO ,  Lara HAWRYLCHAK ,  Malcolm J. BEVAN ,  Theresa Kramer GUARINI ,  Wei LIU ,  Bernard L. HWANG

IPC分类号： G01J3/28 ,  G01J3/02 ,  G01J3/10 ,  G01J3/443

CPC分类号： G01J3/28 ,  G01J3/0218 ,  G01J3/10 ,  G01J3/443 ,  G01J2003/2879

摘要： One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

公开(公告)号：US20220178747A1

公开(公告)日：2022-06-09

申请号：US17604814

申请日：2020-03-27

申请人： Applied Materials, Inc.

发明人： Kin Pong LO ,  Lara HAWRYLCHAK ,  Malcolm J. BEVAN ,  Theresa Kramer GUARINI ,  Wei LIU ,  Bernard L. HWANG

IPC分类号： G01J3/10 ,  G01J3/443 ,  G01J3/02

摘要： One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

公开(公告)号：US20170314124A1

公开(公告)日：2017-11-02

申请号：US15461172

申请日：2017-03-16

申请人： Applied Materials, Inc.

发明人： Bernard L. HWANG

IPC分类号： C23C16/40 ,  H01L21/67 ,  C23C16/458

CPC分类号： C23C16/405 ,  C23C16/40 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4585 ,  H01L21/67063

摘要： Implementations of the present disclosure include methods and apparatuses utilized to reduce particle generation within a processing chamber. In one implementation, a lid for a substrate processing chamber is provided. The lid includes a cover member having a first surface and a second surface opposite the first surface, a central opening through the cover member, wherein an inner profile of the central opening includes a first section having a first diameter, a second section having a second diameter, and a third section having a third diameter, wherein the second diameter is between the first diameter and the third diameter, and the first diameter increases from the second section toward the first surface of the cover member, and a trench formed along a closed path in the first surface and having a recess formed in an inner surface of the trench.

公开(公告)号：US20230057432A1

公开(公告)日：2023-02-23

申请号：US17981575

申请日：2022-11-07

申请人： Applied Materials, Inc.

发明人： Bernard L. HWANG

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  H01L21/67

摘要： Embodiments of the present disclosure include methods and apparatuses utilized to reduce particle generation within a processing chamber. In one or more embodiments, a lid for a substrate processing chamber is provided and includes a cover member, a central opening, and a trench. An inner profile of the central opening contains a first section having a first diameter, a second section having a second diameter, and a third section having a third diameter. The second section is disposed between and connected to the first section and the third section. The first diameter gradually increases from the second section toward the surface of the cover member, the second diameter cylindrically extends from the first section to the third section, and the third diameter is less than the second diameter. The trench surrounds the central opening and is formed along a closed path in the surface of the cover member.

公开(公告)号：US20220301920A1

公开(公告)日：2022-09-22

申请号：US17832775

申请日：2022-06-06

申请人： Applied Materials, Inc.

发明人： Kin Pong LO ,  Vladimir NAGORNY ,  Wei LIU ,  Theresa Kramer GUARINI ,  Bernard L. HWANG ,  Malcolm J. BEVAN ,  Jacob ABRAHAM ,  Swayambhu Prasad BEHERA

IPC分类号： H01L21/687 ,  H01J37/32 ,  C23C16/455 ,  H01L21/67 ,  C23C16/458

摘要： Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

公开(公告)号：US20210272774A1

公开(公告)日：2021-09-02

申请号：US17324798

申请日：2021-05-19

申请人： Applied Materials, Inc.

发明人： Bernard L. HWANG

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  H01L21/67

摘要： Implementations of the present disclosure include methods and apparatuses utilized to reduce particle generation within a processing chamber. In one implementation, a lid for a substrate processing chamber is provided. The lid includes a cover member having a first surface and a second surface opposite the first surface, a central opening through the cover member, wherein an inner profile of the central opening includes a first section having a first diameter, a second section having a second diameter, and a third section having a third diameter, wherein the second diameter is between the first diameter and the third diameter, and the first diameter increases from the second section toward the first surface of the cover member, and a trench formed along a closed path in the first surface and having a recess formed in an inner surface of the trench.

公开(公告)号：US20190088485A1

公开(公告)日：2019-03-21

申请号：US16102275

申请日：2018-08-13

申请人： Applied Materials, Inc.

发明人： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Ken Kaung LAI ,  Bernard L. HWANG ,  Jeffrey TOBIN ,  Christopher S. OLSEN ,  Malcolm BEVAN

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L27/11524 ,  H01J37/32 ,  H01L21/321

摘要： Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

公开(公告)号：US20220013336A1

公开(公告)日：2022-01-13

申请号：US16926104

申请日：2020-07-10

申请人： Applied Materials, Inc.

发明人： Jian WU ,  Lara A. HAWRYLCHAK ,  Ren-Guan DUAN ,  Bernard L. HWANG ,  Malcolm J. BEVAN ,  Wei LIU

IPC分类号： H01J37/32 ,  H01L21/683 ,  B08B7/00

摘要： A method and apparatus for the use of hydrogen plasma treatments is described herein. The process chamber includes a plurality of chamber components. The plurality of chamber components may be coated with a yttrium zirconium oxide composition, such as a Y2O3—ZrO2 solid solution. Some of the plurality of chamber components are replaced with a bulk yttrium zirconium oxide ceramic. Yet other chamber components are replaced with similar components of different materials.

公开(公告)号：US20210202702A1

公开(公告)日：2021-07-01

申请号：US17202131

申请日：2021-03-15

申请人： Applied Materials, Inc.

发明人： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Canfeng LAI ,  Bernard L. HWANG ,  Jeffrey A. TOBIN ,  Christopher S. OLSEN ,  Malcolm J. BEVAN

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01J37/32 ,  H01L21/321 ,  H01L27/11524

摘要： Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.