公开(公告)号：US20230369017A1

公开(公告)日：2023-11-16

申请号：US18199780

申请日：2023-05-19

申请人： Applied Materials, Inc.

发明人： Vladimir NAGORNY ,  Wei LIU ,  Rene GEORGE

IPC分类号： H01J37/32

CPC分类号： H01J37/3211 ,  H01J37/3244 ,  H01J2237/332

摘要： Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.

公开(公告)号：US20210262093A1

公开(公告)日：2021-08-26

申请号：US17317418

申请日：2021-05-11

申请人： Applied Materials, Inc.

发明人： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC分类号： C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  C23C14/56

摘要： A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20190157143A1

公开(公告)日：2019-05-23

申请号：US16260084

申请日：2019-01-28

申请人： Applied Materials, Inc.

发明人： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA ,  Shankar MUTHUKRISHNAN ,  Rene GEORGE

IPC分类号： H01L21/768 ,  H01L21/285

摘要： Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.

公开(公告)号：US20220223383A1

公开(公告)日：2022-07-14

申请号：US17600243

申请日：2020-03-13

申请人： Applied Materials, Inc.

发明人： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Hansel LO ,  Christopher S. OLSEN ,  Tobin KAUFMAN-OSBORN ,  Tobin MAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK

IPC分类号： H01J37/32 ,  C23C16/455

摘要： Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly that in one embodiment includes a body including a first opening and a second opening opposing the first opening, wherein the opening comprises a first end and a second end opposing the first end, and a flow valve disposed between the first opening and the second opening, the flow valve coupled to the body by a rotatable shaft that provides movement of the flow valve in angles between about 0 degrees and about 90 degrees relative to a central axis of the processing chamber.

公开(公告)号：US20220165547A1

公开(公告)日：2022-05-26

申请号：US17103697

申请日：2020-11-24

申请人： Applied Materials, Inc.

发明人： Vishwas Kumar PANDEY ,  Eric Kihara SHONO ,  Christopher S. OLSEN ,  Tobin KAUFMAN-OSBORN ,  Erika HANSEN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Hansel LO ,  Kartik Bhupendra SHAH

IPC分类号： H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/455

摘要： Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.

公开(公告)号：US20170365512A1

公开(公告)日：2017-12-21

申请号：US15438490

申请日：2017-02-21

申请人： Applied Materials, Inc.

发明人： Johanes S. SWENBERG ,  Wei LIU ,  Houda GRAOUI ,  Shashank SHARMA ,  Shankar MUTHUKRISHNAN ,  Rene GEORGE

IPC分类号： H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76856 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/7685 ,  H01L21/76889

摘要： Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.

公开(公告)号：US20240266146A1

公开(公告)日：2024-08-08

申请号：US18106981

申请日：2023-02-07

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Rene GEORGE ,  Victor CALDERON

IPC分类号： H01J37/32

CPC分类号： H01J37/32422 ,  H01J2237/15 ,  H01J2237/3323

摘要： A process chamber is provided including a chamber body disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support in the process volume; a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector positioned at least partially in the process volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom. The one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume.

公开(公告)号：US20220411927A1

公开(公告)日：2022-12-29

申请号：US17753524

申请日：2020-09-09

申请人： Applied Materials, Inc.

发明人： Vishwas Kumar PANDEY ,  Christopher OLSEN ,  Rene GEORGE ,  Eric SHONO ,  Lara HAWRYLCHAK ,  Erika HANSEN ,  Tobin KAUFMAN-OSBORN ,  Hansel LO ,  Kartik SHAH

IPC分类号： C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

摘要： Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

公开(公告)号：US20220223374A1

公开(公告)日：2022-07-14

申请号：US17149254

申请日：2021-01-14

申请人： Applied Materials, Inc.

发明人： Vladimir NAGORNY ,  Wei LIU ,  Rene GEORGE

IPC分类号： H01J37/32

摘要： Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.

公开(公告)号：US20240170263A1

公开(公告)日：2024-05-23

申请号：US18521948

申请日：2023-11-28

申请人： Applied Materials, Inc.

发明人： Wei LIU ,  Vladimir NAGORNY ,  Rene GEORGE

IPC分类号： H01J37/32 ,  H01L21/02

CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/0228 ,  H01J2237/334

摘要： Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.