公开(公告)号：US20230028054A1

公开(公告)日：2023-01-26

申请号：US17958282

申请日：2022-09-30

申请人： Applied Materials, Inc.

发明人： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Kartik SHAH ,  Hansel LO ,  Tobin KAUFMAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Erika HANSEN

IPC分类号： C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

摘要： A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20200251331A1

公开(公告)日：2020-08-06

申请号：US16849713

申请日：2020-04-15

申请人： Applied Materials, Inc.

发明人： Hansel LO ,  Christopher S. OLSEN ,  Eric Kihara SHONO ,  Johanes S. SWENBERG ,  Erika HANSEN ,  Taewan KIM ,  Lara HAWRYLCHAK

IPC分类号： H01L21/02 ,  H01J37/32 ,  H01L21/311

摘要： Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.

公开(公告)号：US20200219703A1

公开(公告)日：2020-07-09

申请号：US16823936

申请日：2020-03-19

申请人： Applied Materials, Inc.

发明人： Vishwas Kumar PANDEY ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Hansel LO ,  Eric Kihara SHONO ,  Hemantha RAJU

IPC分类号： H01J37/32 ,  C23C16/455

摘要： Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20190032216A1

公开(公告)日：2019-01-31

申请号：US16049239

申请日：2018-07-30

申请人： Applied Materials, Inc.

发明人： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC分类号： C23C16/455

摘要： A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20220223383A1

公开(公告)日：2022-07-14

申请号：US17600243

申请日：2020-03-13

申请人： Applied Materials, Inc.

发明人： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Hansel LO ,  Christopher S. OLSEN ,  Tobin KAUFMAN-OSBORN ,  Tobin MAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK

IPC分类号： H01J37/32 ,  C23C16/455

摘要： Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly that in one embodiment includes a body including a first opening and a second opening opposing the first opening, wherein the opening comprises a first end and a second end opposing the first end, and a flow valve disposed between the first opening and the second opening, the flow valve coupled to the body by a rotatable shaft that provides movement of the flow valve in angles between about 0 degrees and about 90 degrees relative to a central axis of the processing chamber.

公开(公告)号：US20220165547A1

公开(公告)日：2022-05-26

申请号：US17103697

申请日：2020-11-24

申请人： Applied Materials, Inc.

发明人： Vishwas Kumar PANDEY ,  Eric Kihara SHONO ,  Christopher S. OLSEN ,  Tobin KAUFMAN-OSBORN ,  Erika HANSEN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Hansel LO ,  Kartik Bhupendra SHAH

IPC分类号： H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/455

摘要： Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.

公开(公告)号：US20220081767A1

公开(公告)日：2022-03-17

申请号：US17539080

申请日：2021-11-30

申请人： Applied Materials, Inc.

发明人： Eric Kihara SHONO

IPC分类号： C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C30B25/14

摘要： Embodiments of the present disclosure provide apparatuses for improving gas distribution during thermal processing. In one or more embodiments, an apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas from the center toward the edge of the substrate advantageously controls growth uniformity throughout the substrate. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.

公开(公告)号：US20190221427A1

公开(公告)日：2019-07-18

申请号：US16226862

申请日：2018-12-20

申请人： Applied Materials, Inc.

发明人： Hansel LO ,  Christopher S. OLSEN ,  Eric Kihara SHONO ,  Johanes S. SWENBERG ,  Erika HANSEN ,  Taewan KIM ,  Lara HAWRYLCHAK

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/02252 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02236 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/311

摘要： Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.

公开(公告)号：US20240360996A1

公开(公告)日：2024-10-31

申请号：US18139057

申请日：2023-04-25

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Sameh HELMY ,  Hansel LO ,  Eric Kihara SHONO

IPC分类号： F23D99/00 ,  C01B33/12 ,  H01L21/02

CPC分类号： F23D91/00 ,  C01B33/126 ,  H01L21/02164 ,  H01L21/0223 ,  F23D2900/14003

摘要： Systems and methods for hydroxyl driven combustion include introducing a first gas via at least a first orifice into a processing chamber having a substrate disposed on a substrate support. A second gas is introduced into the processing chamber via a plurality of second orifices. The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least a first orifice of the plurality of first orifices. A radical is produced as a function of the first gas and the second gas while heating the chamber.

公开(公告)号：US20240360559A1

公开(公告)日：2024-10-31

申请号：US18139103

申请日：2023-04-25

申请人： Applied Materials, Inc.

发明人： Christopher S. OLSEN ,  Sameh HELMY ,  Hansel LO ,  Eric Kihara SHONO

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45559 ,  C23C16/45517 ,  C23C16/45574 ,  C23C16/458

摘要： A method and processing chamber for plenum driven hydroxyl combustion oxidation. A mixture is produced in a plenum. The mixture includes a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected towards a substrate of a processing chamber at a jet gas velocity greater than a flame gas velocity. A radical is produced as a function of the first gas and the second gas while heating the chamber.