公开(公告)号：US20150311067A1

公开(公告)日：2015-10-29

申请号：US14261017

申请日：2014-04-24

申请人： Applied Materials, Inc.

发明人： Shashank SHARMA ,  Jau-Jiun CHEN ,  Wolfgang R. ADERHOLD ,  Kai NG ,  Houda GRAOUI ,  Shankar MUTHUKRISHNAN ,  Abhilash J. MAYUR ,  Gia PHAM

IPC分类号： H01L21/02

CPC分类号： H01L21/02337 ,  H01L21/02332 ,  H01L21/02345 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/28202

摘要： Embodiments of the present disclosure relate to methods for processing a substrate. In one embodiment, the method includes forming a dielectric layer over a substrate, wherein the dielectric layer has a dielectric value of about 3.9 or greater, heating the substrate to a first temperature of about 600 degrees Celsius or less by a heater of a substrate support disposed within a process chamber, and incorporating nitrogen into the dielectric layer in the process chamber by annealing the dielectric layer at a second temperature between about 650 and about 1450 degrees Celsius in an ambient nitrogen environment, wherein the annealing is performed on the order of millisecond scale.

摘要翻译： 本公开的实施例涉及用于处理衬底的方法。 在一个实施例中，该方法包括在衬底上形成电介质层，其中电介质层的电介质值约为3.9或更大，通过衬底支撑件的加热器将衬底加热至约600摄氏度或更低的第一温度 设置在处理室内，并且通过在环境氮环境中在约650℃和约1450摄氏度之间的第二温度下退火介电层，将氮气并入处理室中的介电层中，其中退火是在毫秒级 规模。