公开(公告)号：US20250132147A1

公开(公告)日：2025-04-24

申请号：US18922507

申请日：2024-10-22

Applicant: Applied Materials, Inc.

Inventor： Jae Young PARK ,  Wei LIU ,  Minghang LI ,  Moon Hee SEO ,  Dileep Venkata Sai VADLADI ,  Sahil TAHILIANI ,  Sandip NIYOGI ,  Dimitrios PAVLOPOULOS ,  Amit JAIN ,  Vladimir NAGORNY ,  Victor CALDERON ,  Edric TONG ,  Rene GEORGE

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.