公开(公告)号：US20240242962A1

公开(公告)日：2024-07-18

申请号：US18153709

申请日：2023-01-12

Applicant: Applied Materials, Inc.

Inventor： Dimitrios PAVLOPOULOS ,  Hansel LO ,  Christopher S. OLSEN

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02164 ,  H01L21/02178 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/31111

Abstract: The present disclosure generally relate to semiconductor device fabrication, and more particularly, to methods of forming a bottom thick oxide layer in a high aspect ratio semiconductor structures. In certain embodiments, the method includes depositing a non-conformal oxide layer on in a feature on a substrate, performing an oxidation process to thermally grow an oxide layer beneath the deposited non-conformal oxide layer in the feature, and selectively stripping the non-conformal oxide layer to expose the thermally grown oxide layer.

公开(公告)号：US20250132147A1

公开(公告)日：2025-04-24

申请号：US18922507

申请日：2024-10-22

Applicant: Applied Materials, Inc.

Inventor： Jae Young PARK ,  Wei LIU ,  Minghang LI ,  Moon Hee SEO ,  Dileep Venkata Sai VADLADI ,  Sahil TAHILIANI ,  Sandip NIYOGI ,  Dimitrios PAVLOPOULOS ,  Amit JAIN ,  Vladimir NAGORNY ,  Victor CALDERON ,  Edric TONG ,  Rene GEORGE

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.

公开(公告)号：US20240035195A1

公开(公告)日：2024-02-01

申请号：US18226007

申请日：2023-07-25

Applicant: Applied Materials, Inc.

Inventor： Qinghua ZHAO ,  Rui CHENG ,  Dimitrios PAVLOPOULOS ,  Karthik JANAKIRAMAN

IPC: C30B25/16 ,  H01L21/02 ,  H01J37/32 ,  C30B29/06 ,  C30B29/52 ,  C30B25/10 ,  C23C16/06 ,  C23C16/24 ,  C23C16/46 ,  C23C16/507 ,  C23C16/52

CPC classification number: C30B25/165 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01J37/32816 ,  H01J37/32724 ,  H01J37/32449 ,  C30B29/06 ,  C30B29/52 ,  C30B25/10 ,  C23C16/06 ,  C23C16/24 ,  C23C16/46 ,  C23C16/507 ,  C23C16/52 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/182

Abstract: Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having single crystalline structures. In one implementation, a method of processing substrates includes positioning a substrate in a processing volume of a chamber, and heating the substrate to a substrate temperature that is 800 degrees Celsius or less. The method includes maintaining the processing volume at a pressure within a range of 1.0 Torr to 8.0 Torr, and flowing one or more silicon-containing gases and one or more diluent gases into the processing volume. The method includes reacting the one or more silicon-containing gases to form one or more reactants, and depositing the one or more reactants onto an exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. The one or more silicon-containing layers each having a single crystalline structure.