公开(公告)号：US20240112945A1

公开(公告)日：2024-04-04

申请号：US18539507

申请日：2023-12-14

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20190127851A1

公开(公告)日：2019-05-02

申请号：US16170255

申请日：2018-10-25

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA ,  Zuoming ZHU ,  Zhiyuan YE ,  Joseph M. RANISH ,  Nyi O. MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/352 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US20170103907A1

公开(公告)日：2017-04-13

申请号：US15288404

申请日：2016-10-07

Applicant: Applied Materials, Inc.

Inventor： Schubert S. CHU ,  Douglas E. HOLMGREN ,  Kartik SHAH ,  Palamurali GAJENDRA ,  Nyi O. MYO ,  Preetham RAO ,  Kevin Joseph BAUTISTA ,  Zhiyuan YE ,  Martin A. HILKENE ,  Errol Antonio C. SANCHEZ ,  Richard O. COLLINS

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/324 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/268 ,  H01L21/324 ,  H01L21/68764

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US20230027683A1

公开(公告)日：2023-01-26

申请号：US17961040

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Lit Ping LAM ,  Preetham RAO ,  Kartik SHAH ,  Ian ONG ,  Nyi O. MYO ,  Brian H. BURROWS

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US20190267263A1

公开(公告)日：2019-08-29

申请号：US16273902

申请日：2019-02-12

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Danny LAU ,  Zhiyuan YE ,  Zuoming ZHU ,  Nyi O. MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: H01L21/67 ,  H01L21/687 ,  B23K26/0622

Abstract: Embodiments described herein provide processing chambers that include an enclosure for a processing volume, a rotatable support within the enclosure, the support having a shaft that extends outside the enclosure, wherein the shaft has a signal feature located outside the processing volume, an energy module within the enclosure, wherein the shaft extends through the energy module, one or more directed energy sources coupled to the enclosure, and one or more signalers positioned proximate to the signal feature, each signaler coupled to at least one of the directed energy sources.

公开(公告)号：US20160133504A1

公开(公告)日：2016-05-12

申请号：US14885016

申请日：2015-10-16

Applicant: Applied Materials, Inc.

Inventor： Schubert S. CHU ,  Kartik SHAH ,  Anhthu NGO ,  Karthik RAMANATHAN ,  Nitin PATHAK ,  Nyi O. MYO ,  Paul BRILLHART ,  Richard O. COLLINS ,  Kevin Joseph BAUTISTA ,  Edric TONG ,  Zhepeng CONG ,  Anzhong CHANG ,  Kin Pong LO ,  Manish HEMKAR

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  H01L21/67115

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Abstract translation: 本公开的实施方式一般涉及用于半导体衬底的热处理的基座。 在一个实施方式中，基座包括围绕并联接到内部区域的第一边缘和设置在内边缘和第一边缘之间的第二边缘。 第二边缘包括具有形成在其中的多个切口的成角度的支撑表面，并且成角度的支撑表面相对于内部区域的顶部表面倾斜。

公开(公告)号：US20150340266A1

公开(公告)日：2015-11-26

申请号：US14698793

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract translation: 在一个实施例中，提供了用于热处理的基座。 基座包括围绕并连接到内部盘的外缘，外缘具有内边缘和外边缘。 所述感受器还包括一个或多个结构，用于当所述基底由所述基座支撑时减小基底和所述基座之间的接触表面积。 所述一个或多个结构中的至少一个结合到靠近外缘的内边缘的内部盘。

公开(公告)号：US20150162230A1

公开(公告)日：2015-06-11

申请号：US14520957

申请日：2014-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kevin Joseph BAUTISTA ,  Richard O. COLLINS ,  Nyi O. MYO

IPC: H01L21/68 ,  C30B25/10 ,  C30B25/12 ,  C30B25/08

CPC classification number: H01L21/68 ,  C23C16/4585 ,  C23C16/482 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/68735

Abstract: Embodiments described herein generally relate to an apparatus for aligning a preheat member. In one embodiment, an alignment assembly is provided for a processing chamber. The alignment assembly includes a lower liner, a preheat member; an alignment mechanism formed on a bottom surface of the preheat member; and an elongated groove formed in a top surface of the lower liner and configured to engage with the alignment mechanism.

Abstract translation: 本文描述的实施例通常涉及用于对准预热构件的装置。 在一个实施例中，为处理室提供对准组件。 对准组件包括下衬垫，预热构件; 形成在所述预热构件的底面上的对准机构; 以及形成在所述下衬套的顶表面中并被构造成与所述对准机构接合的细长槽。

公开(公告)号：US20220283029A1

公开(公告)日：2022-09-08

申请号：US17630235

申请日：2020-07-08

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Martin A. HILKENE ,  Avinash SHERVEGAR ,  Surendra Singh SRIVASTAVA ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Zhiyuan YE ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Bindusugar MARATH SANKARATHODI ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny LIN ,  Nyi O. MYO ,  Schubert S. CHU

IPC: G01J3/443 ,  C23C16/455

Abstract: One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

公开(公告)号：US20220082445A1

公开(公告)日：2022-03-17

申请号：US17021411

申请日：2020-09-15

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Schubert S. CHU ,  Nyi O. MYO

IPC: G01J5/52 ,  G01J5/34

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.