公开(公告)号：US20240347372A1

公开(公告)日：2024-10-17

申请号：US18632421

申请日：2024-04-11

申请人： Applied Materials, Inc.

发明人： Balakrishnam R. JAMPANA ,  Masato ISHII ,  Zhepeng CONG

IPC分类号： H01L21/687 ,  C23C16/458 ,  C30B25/12

CPC分类号： H01L21/68785 ,  C23C16/4583 ,  H01L21/6875 ,  C30B25/12

摘要： Described herein are a susceptor, processing chambers having the same, and method for substrate processing using the same. In one example, a susceptor for supporting a substrate during processing is provided. The susceptor has a disk shaped body that includes a rim circumscribing an inner region. The inner region is recessed to form a recessed pocket that is configured to receive a substrate. A plurality of bumps extend radially into the inner region that are configured to contact an outer edge of the substrate when the substrate is disposed in the recessed pocket. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from a centerline of the body that is at least 4.0 millimeter less than a radius defining an inner wall of the rim.

公开(公告)号：US20240014065A1

公开(公告)日：2024-01-11

申请号：US17860891

申请日：2022-07-08

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Balakrishnam R. JAMPANA ,  Masato ISHII ,  Shawn Joseph BONHAM ,  James M. AMOS ,  Kirk Allen FISHER ,  Philip Michael AMOS ,  Cathryne A. RYAN ,  Aimee S. ERHARDT ,  Xinning LUAN ,  Hui CHEN

IPC分类号： H01L21/687

CPC分类号： H01L21/68757 ,  H01L21/68785

摘要： A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a susceptor ledge on an outer circumferential edge of a front side of the susceptor substrate, wherein a pocket within the susceptor ledge is configured to hold a wafer to be processed in a processing chamber, and a coating layer deposited on the susceptor substrate, wherein a surface of the susceptor ledge is textured with a plurality of venting groove lines, a surface of the pocket is textured with a first pattern, and a surface of a back side of the susceptor substrate opposite the front side is textured with a second pattern.

公开(公告)号：US20210028075A1

公开(公告)日：2021-01-28

申请号：US16938510

申请日：2020-07-24

申请人： Applied Materials, Inc.

发明人： Zuoming ZHU ,  Shu-Kwan LAU ,  Ala MORADIAN ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Vilen K. NESTOROV ,  Zhiyuan YE ,  Bindusagar MARATH SANKARATHODI ,  Maxim D. SHAPOSHNIKOV ,  Surendra Singh SRIVASTAVA ,  Zhepeng CONG ,  Patricia M. LIU ,  Errol C. SANCHEZ ,  Jenny C. LIN ,  Schubert S. CHU ,  Balakrishnam R. JAMPANA

IPC分类号： H01L21/66 ,  H01L21/67

摘要： A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.