公开(公告)号：US20210407792A1

公开(公告)日：2021-12-30

申请号：US16914960

申请日：2020-06-29

申请人： Applied Materials, Inc.

发明人： Bo Xie ,  Kang S. Yim ,  Yijun Liu ,  Li-Qun Xia ,  Ruitong Xiong

IPC分类号： H01L21/02 ,  C23C16/32

摘要： Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

公开(公告)号：US20240290611A1

公开(公告)日：2024-08-29

申请号：US18609238

申请日：2024-03-19

申请人： Applied Materials, Inc.

发明人： Bo Xie ,  Kang S. Yim ,  Yijun Liu ,  Li-Qun Xia ,  Ruitong Xiong

IPC分类号： H01L21/02 ,  C23C16/32

CPC分类号： H01L21/02126 ,  C23C16/325 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02216

摘要： Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

公开(公告)号：US11967498B2

公开(公告)日：2024-04-23

申请号：US16914960

申请日：2020-06-29

申请人： Applied Materials, Inc.

发明人： Bo Xie ,  Kang S. Yim ,  Yijun Liu ,  Li-Qun Xia ,  Ruitong Xiong

IPC分类号： H01L21/02 ,  C23C16/32

CPC分类号： H01L21/02126 ,  C23C16/325 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02216

摘要： Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.