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公开(公告)号:US07615872B2
公开(公告)日:2009-11-10
申请号:US12314209
申请日:2008-12-05
申请人: Noriyuki Takahashi , Masahiro Ichitani , Rumiko Ichitani, legal representative , Kazuhiro Ichitani, legal representative , Sachiyo Ichitani, legal representative
CPC分类号: H01L23/49838 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45144 , H01L2224/48227 , H01L2224/49175 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要: A semiconductor device comprises: a package substrate having a plurality of bonding electrodes arranged in a peripheral region of a main surface thereof and wirings connected to the respective bonding electrodes and electrolessly plated; a semiconductor chip mounted on the package substrate; a plurality of wires connecting pads of the semiconductor chip and the bonding electrodes; a sealing body for sealing the semiconductor chip and the wires with resin; and a plurality of solder balls arranged on the package substrate. The wirings are formed only at the inner side of the plurality of bonding electrodes on the main surface of the package substrate, and no solder resist film is formed at the outer side of the plurality of bonding electrodes. With this arrangement, the region outside the bonding electrodes can be minimized and the semiconductor device can be downsized without changing the size of the chip mounted thereon.
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公开(公告)号:US20090091031A1
公开(公告)日:2009-04-09
申请号:US12314209
申请日:2008-12-05
申请人: Noriyuki Takahashi , Masahiro Ichitani , Rumiko Ichitani , Kazuhiro Ichitani , Sachiyo Ichitani
发明人: Noriyuki Takahashi , Masahiro Ichitani , Rumiko Ichitani , Kazuhiro Ichitani , Sachiyo Ichitani
IPC分类号: H01L23/498
CPC分类号: H01L23/49838 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45144 , H01L2224/48227 , H01L2224/49175 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要: A semiconductor device comprises: a package substrate having a plurality of bonding electrodes arranged in a peripheral region of a main surface thereof and wirings connected to the respective bonding electrodes and electrolessly plated; a semiconductor chip mounted on the package substrate; a plurality of wires connecting pads of the semiconductor chip and the bonding electrodes; a sealing body for sealing the semiconductor chip and the wires with resin; and a plurality of solder balls arranged on the package substrate. The wirings are formed only at the inner side of the plurality of bonding electrodes on the main surface of the package substrate, and no solder resist film is formed at the outer side of the plurality of bonding electrodes. With this arrangement, the region outside the bonding electrodes can be minimized and the semiconductor device can be downsized without changing the size of the chip mounted thereon.
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公开(公告)号:US07015069B2
公开(公告)日:2006-03-21
申请号:US11047660
申请日:2005-02-02
申请人: Noriyuki Takahashi , Masayuki Suzuki , Kouji Tsuchiya , Takao Matsuura , Takanori Hashizume , Masahiro Ichitani , Kazunari Suzuki , Takafumi Nishita , Kenichi Imura , Takashi Miwa
发明人: Noriyuki Takahashi , Masayuki Suzuki , Kouji Tsuchiya , Takao Matsuura , Takanori Hashizume , Masahiro Ichitani , Kazunari Suzuki , Takafumi Nishita , Kenichi Imura , Takashi Miwa
IPC分类号: H01L21/44
CPC分类号: H01L23/564 , H01L21/561 , H01L21/565 , H01L23/3128 , H01L23/49816 , H01L23/49838 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2223/5442 , H01L2223/54473 , H01L2224/16 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2224/92 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/07802 , H01L2924/0781 , H01L2924/14 , H01L2924/1433 , H01L2924/15151 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/30105 , H01L2924/351 , H01L2224/83 , H01L2224/85 , H01L2924/00014 , H01L2224/92247 , H01L2924/00 , H01L2924/00012
摘要: The back side of a strip substrate with plural semiconductor chips mounted thereon is vacuum-chucked to a lower mold half of a mold, and in this state the plural semiconductor chips are sealed with resin simultaneously to form a seal member. Thereafter, the strip substrate and the seal member are released from the mold and are cut into plural semiconductor devices. The semiconductor devices thus obtained are improved in their mounting reliability.
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公开(公告)号:US06590275B2
公开(公告)日:2003-07-08
申请号:US10059341
申请日:2002-01-31
IPC分类号: H01L23495
CPC分类号: H01L24/32 , H01L21/565 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/05554 , H01L2224/29111 , H01L2224/2919 , H01L2224/32057 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/83194 , H01L2224/83385 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/07802 , H01L2924/10162 , H01L2924/12042 , H01L2924/14 , H01L2924/15151 , H01L2924/15183 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/13116 , H01L2224/45015 , H01L2924/207
摘要: In a ball grid array type semiconductor package, a semiconductor chip is mounted through an adhesive material on a surface of a flexible film substrate. Plural bump electrodes are arranged in an array on the opposite side of said substrate and the semiconductor chip is sealed by a resin. In this regard, an insulation layer is formed to cover an electric conductor layer pattern formed on the surface of the substrate, and the semiconductor chip is mounted through an adhesive material on the insulation layer. The insulation layer is divided into a plural number of parts that are mutually discontinuous in the area under the semiconductor chip. By this divided insulation layer, a short circuit between the semiconductor chip and the electric conductor layer pattern is prevented and a deformation of the substrate that comprises the flexible films is suppressed.
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公开(公告)号:US06531760B1
公开(公告)日:2003-03-11
申请号:US09558105
申请日:2000-04-25
申请人: Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人: Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号: H01L23495
CPC分类号: H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0695 , H01L2224/85399
摘要: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
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公开(公告)号:US06448111B1
公开(公告)日:2002-09-10
申请号:US09594046
申请日:2000-06-15
IPC分类号: H01L2144
CPC分类号: H01L24/32 , H01L21/565 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/05554 , H01L2224/29111 , H01L2224/2919 , H01L2224/32057 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/83194 , H01L2224/83385 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/07802 , H01L2924/10162 , H01L2924/12042 , H01L2924/14 , H01L2924/15151 , H01L2924/15183 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/13116 , H01L2224/45015 , H01L2924/207
摘要: In a method of forming a ball grid array type semiconductor package, a semiconductor chip is mounted through an adhesive material on a surface of a flexible film substrate. Plural bump electrodes are arranged in an array on the opposite side of said substrate and the semiconductor chip is sealed by a resin. In this regard, an insulation layer is formed to cover an electric conductor layer pattern formed on the surface of the substrate, and the semiconductor chip is mounted through an adhesive material on the insulation layer. The insulation layer is divided into a plural number of parts that are mutually discontinuous in the area under the semiconductor chip. By this divided insulation layer, a short circuit between the semiconductor chip and the electric conductor layer pattern is prevented and a deformation of the substrate that comprises the flexible films is suppressed.
摘要翻译: 在形成球栅阵列型半导体封装的方法中,半导体芯片通过粘合剂材料安装在柔性膜基板的表面上。 多个凸起电极在所述基板的相对侧上排列成阵列,半导体芯片由树脂密封。 在这方面,形成绝缘层以覆盖形成在基板的表面上的导电体层图案,并且半导体芯片通过粘合材料安装在绝缘层上。 绝缘层被分成在半导体芯片下面的区域中相互不连续的多个部分。 通过该分隔绝缘层,可以防止半导体芯片与导电体层图案之间的短路,抑制包含柔性膜的基板的变形。
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公开(公告)号:US06340793B1
公开(公告)日:2002-01-22
申请号:US09525026
申请日:2000-03-14
申请人: Akihiro Yaguchi , Ryo Haruta , Masahiro Ichitani
发明人: Akihiro Yaguchi , Ryo Haruta , Masahiro Ichitani
IPC分类号: H01L2328
CPC分类号: H01L24/49 , H01L23/16 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/16225 , H01L2224/32225 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/484 , H01L2224/48599 , H01L2224/48699 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/85444 , H01L2224/85455 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: In a ball grid array type semiconductor device mounted on a printed wiring board, the external terminals can be prevented from being broken down even when the ambient temperature on the device is repeatedly changed. A flexible adhesive member for gluing the semiconductor chip to an insulating tape is provided to cover up to a region including the lands to which the external terminals are bonded and which are provided on the insulating tape surface. The flexible adhesive member for covering the lands may be replaced by a flexible low-elasticity member.
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公开(公告)号:US6120301A
公开(公告)日:2000-09-19
申请号:US686503
申请日:1996-07-24
CPC分类号: H01L23/3128 , H01L21/565 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L2224/05553 , H01L2224/32225 , H01L2224/48227 , H01L2224/48235 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2924/00014 , H01L2924/01078 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19105
摘要: In the BGA in which the bonding portions of the support frame bonded to the wiring substrate via adhesive layer are molded by a resin, the areas of the bonding portions are each selected to be from 0.5 to 3.1 mm.sup.2. Furthermore, holes are formed in the substrate under the frame corresponding to the bonding portions.
摘要翻译: 在其中通过粘合剂层粘合到布线基板的支撑框架的接合部分由树脂模制的BGA中,接合部分的面积各自被选择为0.5至3.1mm 2。 此外,在对应于接合部分的框架下方的基板中形成孔。
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公开(公告)号:US6072231A
公开(公告)日:2000-06-06
申请号:US066877
申请日:1998-04-28
申请人: Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
发明人: Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
IPC分类号: H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号: H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
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公开(公告)号:US5914530A
公开(公告)日:1999-06-22
申请号:US52981
申请日:1998-04-01
申请人: Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人: Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号: H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号: H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
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