发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US686503申请日： 1996-07-24
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公开(公告)号： US6120301A公开(公告)日： 2000-09-19
- 发明人: Masahiro Ichitani , Ryo Haruta , Katsuyuki Matsumoto , Arata Kinjyo , Tsutomu Kakimoto
- 申请人： Masahiro Ichitani , Ryo Haruta , Katsuyuki Matsumoto , Arata Kinjyo , Tsutomu Kakimoto
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-231968 19950817
- 主分类号： H01L23/28
- IPC分类号： H01L23/28 ; H01L21/56 ; H01L23/12 ; H01L23/31 ; H01L23/498 ; H01L21/20
摘要：
In the BGA in which the bonding portions of the support frame bonded to the wiring substrate via adhesive layer are molded by a resin, the areas of the bonding portions are each selected to be from 0.5 to 3.1 mm.sup.2. Furthermore, holes are formed in the substrate under the frame corresponding to the bonding portions.
公开/授权文献
- US4551521A Low-melting copolyester adhesives 公开/授权日：1985-11-05
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