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    Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity
    2.
    发明授权
    Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity 失效
    用于高频的双稳态半导体部件具有交替相对导电类型的四个区域

    公开(公告)号：US4081821A

    公开(公告)日：1978-03-28

    申请号：US642551

    申请日：1975-12-19

    申请人： Jozef Cornu ,  Roland Sittig

    发明人： Jozef Cornu ,  Roland Sittig

    IPC分类号： H01L29/36 ,  H01L29/74 ,  H01L1/04 ,  H01L3/00 ,  H01L5/00

    CPC分类号： H01L29/7432 ,  H01L29/36

    摘要： A bistable semiconductor component for high frequencies with a semiconductor chip includes a sequence of at least four zones of alternating opposed types of conductivity. The outer zones form the emitter zones and are more heavily doped than the two inner zones. The base zones are so doped that with a voltage V.sub.R smaller than or at most equal to the maximum inverse voltage V.sub.RS applied in the reverse direction across the two emitter zones, the shortest distance W between the two blocking layers formed at the two outer junctions is less than the diffusion length L.sub.B of the charge carriers in the base zones.

    摘要翻译： 具有半导体芯片的用于高频的双稳态半导体部件包括具有交替相对导电类型的至少四个区域的序列。 外部区域形成发射区，并且比两个内部区域更重掺杂。 基极区是这样掺杂的，其电压VR小于或者最多等于穿过两个发射极区域的相反方向施加的最大反向电压VRS，形成在两个外部接头处的两个阻挡层之间的最短距离W是 小于基区中电荷载体的扩散长度LB。

    Semiconductive metal chalcogenides of the type Cu.sub.3 VS.sub.4 and methods for preparing them
    3.
    发明授权
    Semiconductive metal chalcogenides of the type Cu.sub.3 VS.sub.4 and methods for preparing them 失效
    Cu（hd 3 {b VS {HD 4 {B及其制备方法）的半导体金属硫族化物

    公开(公告)号：US3945935A

    公开(公告)日：1976-03-23

    申请号：US193701

    申请日：1971-10-29

    申请人： Bruce A. Torp ,  Edward C. Shaffer

    发明人： Bruce A. Torp ,  Edward C. Shaffer

    IPC分类号： C30B25/00 ,  H01L45/00 ,  C04B35/00 ,  H01L3/00

    CPC分类号： C30B25/00 ,  C30B29/46 ,  C30B29/48

    摘要： Novel semiconductive tertiary and higher order type copper-Group V transition metal chalcogenides having useful broad-band photoconductive properties are characterized by containing fewer than 100 ppm of impurities as determined by electron microprobe analysis, excluding doping agents which may be present. These materials are made e.g. by chemical vapor transport methods using the powdered chalcogenide or mixtures of stoichiometric amounts of the elements of which it is composed, with a small amount of halogen or hydrogen halide and heating the mixture in vacuum in a temperature gradient in which the highest temperature is below about 1200.degree. C. Photoconducting devices can be made e.g. by supplying electrodes to a thin film of the material upon a dielectric substrate.

    摘要翻译： 具有有用的宽带光电导性质的新型半导体三级和高级类型的铜 - 族V族过渡金属硫族化物的特征在于，通过电子微探针分析测定的含量少于100ppm的杂质，不包括可能存在的掺杂剂。 这些材料例如制成。 通过化学气相传输方法，使用粉末状硫族化物或其组成的化学计量的其元素的混合物与少量的卤素或卤化氢，并在真空中以最高温度低于约的温度梯度加热该混合物 1200℃。可以制成光导器件，例如 通过在电介质基板上向该材料的薄膜供电。

    Mercury sulfide films and method of growth
    4.
    发明授权
    Mercury sulfide films and method of growth 失效
    汞硫化汞薄膜及其生长方法

    公开(公告)号：US3914525A

    公开(公告)日：1975-10-21

    申请号：US45165374

    申请日：1974-03-15

    申请人： ROCKWELL INTERNATIONAL CORP

    发明人： EHMAN MICHAEL F

    IPC分类号： C30B19/02 ,  H01L3/00 ,  H01M15/02

    CPC分类号： C30B19/02 ,  C30B29/10

    摘要： Monocrystalline films or layers of hexagonal mercury sulfide or cinnabar are epitaxially grown on monocrystalline optical or semiconductive substrates using liquid phase epitaxy. The films are grown by forming a charge consisting of HgS, Na2S, and S; heating the charge to above the 344*C transition temperature of HgS to form a homogeneous melt consisting of HgS solute in Na2S4 solvent; lowering the temperature of the melt to saturate the solvent with HgS; inserting a monocrystalline substrate seed crystal into the melt; and, slowly cooling the melt to supersaturate the melt with respect to HgS, then precipitate HgS out of solution and form a monocrystalline layer of cinnabar on the substrate seed crystal.

    摘要翻译： 使用液相外延，在单晶光学或半导体衬底上外延生长单晶膜或六方晶系硫化汞或朱砂的层。 通过形成由HgS，Na 2 S和S组成的电荷来生长膜; 将电荷加热到HgS的344℃转变温度以形成由Na 2 S 4溶剂中的HgS溶质组成的均匀熔体; 降低熔体的温度使HgS饱和溶剂; 将单晶衬底晶种插入熔体中; 并慢慢冷却熔体使熔体相对于HgS过饱和，然后将HgS从溶液中沉淀出来，并在底物晶种上形成朱砂单晶层。

    Reflective multiple contact for semiconductor light conversion elements
    9.
    发明授权
    Reflective multiple contact for semiconductor light conversion elements 失效
    半导体光转换元件的反射多重接触

    公开(公告)号：US3871008A

    公开(公告)日：1975-03-11

    申请号：US42793573

    申请日：1973-12-26

    申请人： GEN ELECTRIC

    发明人： DEBESIS JOHN R

    IPC分类号： H01L29/41 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/10 ,  H01L33/38 ,  H01L3/00 ,  H01L5/00

    CPC分类号： H01L33/38 ,  H01L31/022408 ,  H01L2224/73265 ,  H01L2224/8592

    摘要： A plurality of individual raised metal contact areas are distributed over and attached to a surface of a semiconductor light conversion element such as a gallium phosphide lightemitting diode. The outer tips of at least some of the raised contact areas are bonded to an electrical contact member, thereby providing an air boundary over a substantial portion of said semiconductor surface and thus causing considerable internal light reflection.

    摘要翻译： 多个单独的凸起金属接触区域分布在诸如磷化镓发光二极管的半导体光转换元件的表面上并附着于其表面。 凸起的接触区域中的至少一些的外部尖端被接合到电接触构件上，从而在所述半导体表面的大部分上提供空气边界，从而引起相当大的内部光反射。

    Semiconductor arrangement
    10.
    发明授权
    Semiconductor arrangement 失效
    半导体安排

    公开(公告)号：US3855606A

    公开(公告)日：1974-12-17

    申请号：US31444672

    申请日：1972-12-12

    申请人： LICENTIA GMBH

    发明人： SCHOBERL W

    IPC分类号： H01L21/00 ,  H01L25/03 ,  H01L33/00 ,  H01L3/00 ,  H01L5/00

    CPC分类号： H01L25/03 ,  H01L21/00 ,  H01L33/00 ,  H01L2224/48137

    摘要： A semiconductor arrangement comprises two feed lines leading into a housing, a semiconductor diode connecting to one feed line and resistance means connected to the other feed line, the diode and the resistance means being also connected together in series.

    摘要翻译： 半导体装置包括通向壳体的两条馈线，连接到一条馈电线的半导体二极管和连接到另一馈电线的电阻装置，二极管和电阻装置也串联在一起。