公开(公告)号：US3893159A

公开(公告)日：1975-07-01

申请号：US44597174

申请日：1974-02-26

Applicant: RCA CORP

Inventor： MARTIN IRVING EDWIN

IPC: H01L23/66 ,  H01L25/16 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/45099

Abstract: The device comprises a plurality of side by side transistor cells individually connected by a plurality of lead wires in a side-by-side lead wire array having a central axis. For reducing the effects of variations of mutual inductance among the various lead wires, and for providing a more uniform temperature from cell to cell, the individual lead wires are designed to have a self-inductance the magnitude of which is directly related to the distance of the particular lead wire from the central axis.

Abstract translation: 该器件包括多个并排晶体管单元，该多个并联晶体管单元由具有中心轴的并排引线阵列中的多根引线单独连接。 为了减少各种引线之间的互感变化的影响，并且为了从单元到单元提供更均匀的温度，单独的导线被设计成具有自感，其大小与其距离直接相关 特定的导线从中心轴线。

公开(公告)号：US3908185A

公开(公告)日：1975-09-23

申请号：US44869774

申请日：1974-03-06

Applicant: RCA CORP

Inventor： MARTIN IRVING EDWIN

IPC: H01L23/04 ,  H01L23/02 ,  H01L23/12 ,  H01L23/66

CPC classification number: H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49109 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/45099

Abstract: An apertured top ceramic member is mounted on a bottom ceramic member, the latter member having a first metallized area thereon on which a semiconductor chip is mounted and a second surrounding metallized area connected to the ground terminal of the device. A large gap is provided between portions of the first and second areas, the size of this gap affecting various characteristics of the device. Also, metallized areas are provided on the apertured member in overlapped but spaced apart relation with portions of the second area on the bottom member, the amount of overlap of these metallized areas affecting various capacitances of the device.

Abstract translation: 开孔顶部陶瓷构件安装在底部陶瓷构件上，后者构件具有其上安装有半导体芯片的第一金属化区域和连接到装置的接地端子的第二周围金属化区域。 在第一和第二区域的部分之间提供大的间隙，该间隙的大小影响装置的各种特性。 此外，金属化区域以与底部构件上的第二区域的部分重叠但间隔开的关系设置在有孔构件上，这些金属化区域的重叠量影响装置的各种电容。