公开(公告)号：US4023179A

公开(公告)日：1977-05-10

申请号：US620687

申请日：1975-10-08

申请人： Kurt Ikrath ,  William Kennebeck ,  Edward C. Shaffer

发明人： Kurt Ikrath ,  William Kennebeck ,  Edward C. Shaffer

IPC分类号： H01Q1/44 ,  H01Q13/18

CPC分类号： H01Q13/16 ,  H01Q1/44 ,  H01Q13/18 ,  Y10S428/919

摘要： A camouflaged VHF military antenna is formed from the slot which is createdhen the door of a pick-up truck having a metal shelter thereon is left partially ajar.

摘要翻译： 当在其上具有金属防护罩的拾取卡车的门部分地残留时，由槽形成伪装的VHF军事天线。

公开(公告)号：US4005429A

公开(公告)日：1977-01-25

申请号：US620684

申请日：1975-10-08

申请人： Kurt Ikrath ,  William Kennebeck ,  Edward C. Shaffer ,  Peter J. Pingitore

发明人： Kurt Ikrath ,  William Kennebeck ,  Edward C. Shaffer ,  Peter J. Pingitore

IPC分类号： H01Q1/32 ,  H01Q13/18

CPC分类号： H01Q1/3275 ,  H01Q13/18 ,  Y10S428/919

摘要： A camouflaged VHF antenna for military vehicles. A false roof is fitted tohe roof of the vehicle's metal shelter. The false roof includes a U-shaped slot which is parallel to the left and right edges and the rear edge of the vehicle roof. The slot is fed at the center of the U and tuning circuits are connected to the left and right edges of the slot.

摘要翻译： 用于军车的伪装VHF天线。 屋顶上装有假屋顶的金属屋顶。 假屋顶包括平行于车顶的左右边缘和后边缘的U形槽。 插槽在U的中心馈电，调谐电路连接到插槽的左右边缘。

公开(公告)号：US3945935A

公开(公告)日：1976-03-23

申请号：US193701

申请日：1971-10-29

申请人： Bruce A. Torp ,  Edward C. Shaffer

发明人： Bruce A. Torp ,  Edward C. Shaffer

IPC分类号： C30B25/00 ,  H01L45/00 ,  C04B35/00 ,  H01L3/00

CPC分类号： C30B25/00 ,  C30B29/46 ,  C30B29/48

摘要： Novel semiconductive tertiary and higher order type copper-Group V transition metal chalcogenides having useful broad-band photoconductive properties are characterized by containing fewer than 100 ppm of impurities as determined by electron microprobe analysis, excluding doping agents which may be present. These materials are made e.g. by chemical vapor transport methods using the powdered chalcogenide or mixtures of stoichiometric amounts of the elements of which it is composed, with a small amount of halogen or hydrogen halide and heating the mixture in vacuum in a temperature gradient in which the highest temperature is below about 1200.degree. C. Photoconducting devices can be made e.g. by supplying electrodes to a thin film of the material upon a dielectric substrate.

摘要翻译： 具有有用的宽带光电导性质的新型半导体三级和高级类型的铜 - 族V族过渡金属硫族化物的特征在于，通过电子微探针分析测定的含量少于100ppm的杂质，不包括可能存在的掺杂剂。 这些材料例如制成。 通过化学气相传输方法，使用粉末状硫族化物或其组成的化学计量的其元素的混合物与少量的卤素或卤化氢，并在真空中以最高温度低于约的温度梯度加热该混合物 1200℃。可以制成光导器件，例如 通过在电介质基板上向该材料的薄膜供电。