公开(公告)号：US07141275B2

公开(公告)日：2006-11-28

申请号：US10870664

申请日：2004-06-16

申请人： Yong Chen

发明人： Yong Chen

IPC分类号： H01L1/04

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A method is provided for imprinting a pattern having nanoscale features from a mold into the patternable layer on a substrate. The method comprises: providing the mold; forming the patternable layer on the substrate; and imprinting the mold into the patternable layer, wherein the patternable layer comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is within a range of at least 10° above room temperature.

摘要翻译： 提供了一种用于将具有纳米尺度特征的图案从模具压印到基底上的可图案层中的方法。 该方法包括：提供模具; 在所述基板上形成所述图案化层; 并将模具压印到图案化层中，其中可图案层包括具有从其固体形式到其液体形式的转变温度的金属或合金，其在高于室温的至少10°的范围内。

公开(公告)号：US3591837A

公开(公告)日：1971-07-06

申请号：US3591837D

申请日：1968-02-06

申请人： INT RECTIFIER CORP

发明人： BOYER JOHN L

IPC分类号： H01L21/60 ,  H01L23/31 ,  H01L1/04

CPC分类号： H01L24/80 ,  H01L23/3157 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/00

摘要： A semiconductor device is formed having a silicon wafer which is assembled between molybdenum expansion plates with junctionproducing solders between the interfaces of the plates and wafer. A glass ring is secured about the outer periphery of the upper expansion plate in an initial manufacturing step, the upper plate being smaller in diameter than the wafer. The combined upper plate and ring is placed in engagement with the upper surface of the wafer and, in single heating step, the outer periphery of the ring is fused to the exposed outer periphery of the wafer and the impurity containing solder is alloyed into the wafer to form one or more junctions.

公开(公告)号：US6133714A

公开(公告)日：2000-10-17

申请号：US455604

申请日：1999-12-06

申请人： Christian Hoffmann ,  Hellmut Freudenberg ,  Manfred Weigl ,  Hartmut Gerken ,  Martin Hecker ,  Richard Pirkl

发明人： Christian Hoffmann ,  Hellmut Freudenberg ,  Manfred Weigl ,  Hartmut Gerken ,  Martin Hecker ,  Richard Pirkl

IPC分类号： F02M51/06 ,  F02D41/20 ,  F02D41/30 ,  F16K31/06 ,  H01L41/04 ,  H01L41/09 ,  H02N2/06 ,  H02J7/16 ,  H01L1/04 ,  H02N7/00

CPC分类号： F02D41/3005 ,  F02D41/2096 ,  H02N2/062 ,  F02D2041/2003 ,  F02D2041/2006 ,  F02D2041/201 ,  F02D2041/2051 ,  F02D2041/2075 ,  F02D2041/2082

摘要： A method of driving at least one capacitive actuator with a charge voltage. From a charge quantity .DELTA.Q supplied to the actuator and from the actuator voltage U.sub.p applied to the actuator after the charging operation is terminated, the actuator capacitance is calculated by the equation C.sub.p =.DELTA.Q/U.sub.p. From these values, the energy E.sub.actual =0.5*C.sub.p *U.sub.p.sup.2 =0.5*.DELTA.Q*U.sub.p is calculated. The charge voltage is regulated such that the energy actually supplied is equivalent to a specified desired value.

摘要翻译： 一种驱动具有充电电压的至少一个电容式致动器的方法。 从充电操作结束后，从提供给致动器的充电量DELTA Q和施加到致动器的致动器电压Up上，通过等式Cp = DELTA Q / Up来计算致动器电容。 从这些值，能量Eactual = 0.5 * Cp * Up2 = 0.5 * DELTA Q * Up。 调节充电电压使得实际供应的能量等于指定的期望值。

公开(公告)号：US4081821A

公开(公告)日：1978-03-28

申请号：US642551

申请日：1975-12-19

申请人： Jozef Cornu ,  Roland Sittig

发明人： Jozef Cornu ,  Roland Sittig

IPC分类号： H01L29/36 ,  H01L29/74 ,  H01L1/04 ,  H01L3/00 ,  H01L5/00

CPC分类号： H01L29/7432 ,  H01L29/36

摘要： A bistable semiconductor component for high frequencies with a semiconductor chip includes a sequence of at least four zones of alternating opposed types of conductivity. The outer zones form the emitter zones and are more heavily doped than the two inner zones. The base zones are so doped that with a voltage V.sub.R smaller than or at most equal to the maximum inverse voltage V.sub.RS applied in the reverse direction across the two emitter zones, the shortest distance W between the two blocking layers formed at the two outer junctions is less than the diffusion length L.sub.B of the charge carriers in the base zones.

摘要翻译： 具有半导体芯片的用于高频的双稳态半导体部件包括具有交替相对导电类型的至少四个区域的序列。 外部区域形成发射区，并且比两个内部区域更重掺杂。 基极区是这样掺杂的，其电压VR小于或者最多等于穿过两个发射极区域的相反方向施加的最大反向电压VRS，形成在两个外部接头处的两个阻挡层之间的最短距离W是 小于基区中电荷载体的扩散长度LB。