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    Acousto-optic devices utilizing thallium arsenic sulfide (T1AsS.sub.3) crystals
    2.
    发明授权
    Acousto-optic devices utilizing thallium arsenic sulfide (T1AsS.sub.3) crystals 失效
    使用铊硫化砷（T1AsS3）晶体的声光器件

    公开(公告)号：US5504615A

    公开(公告)日：1996-04-02

    申请号：US165291

    申请日：1993-12-13

    申请人： Narsingh B. Singh ,  Milton S. Gottlieb ,  James P. McHugh ,  Robert Mazelsky

    发明人： Narsingh B. Singh ,  Milton S. Gottlieb ,  James P. McHugh ,  Robert Mazelsky

    IPC分类号： G02F1/00 ,  G02F1/33 ,  G02F1/11

    CPC分类号： G02F1/0018 ,  C01P2002/84 ,  G02F1/33

    摘要： Acousto-optical devices utilize crystals of a novel material thallium arsenic sulfide (Tl.sub.3 AsS.sub.3) grown from a melt. A Tl.sub.3 AsS.sub.3 crystal is cut and parallel faces are prepared and polished. A piezoelectric transducer connected to an RF generator is placed on the acoustic face to generate sound waves. The light is directed through the optical face of the crystal and interacts with the acoustic waves. These devices may be used in signal processing, spectrum analyzing, spectroscopic, liquid analyzing and spectral imaging systems.

    摘要翻译： 声光装置使用从熔体生长的新型材料铊硫化砷（Tl3AsS3）的晶体。 切割Tl3AsS3晶体并制备并平面。 连接到RF发生器的压电换能器放置在声表面上以产生声波。 光被引导通过晶体的光学面并与声波相互作用。 这些器件可用于信号处理，频谱分析，光谱，液体分析和光谱成像系统。

    Thin film electroluminescent edge emitter structure with optical lens and multi-color light emission systems
    4.
    发明授权
    Thin film electroluminescent edge emitter structure with optical lens and multi-color light emission systems 失效
    具有光学透镜和多色发光系统的薄膜电致发光边缘发射器结构

    公开(公告)号：US5043715A

    公开(公告)日：1991-08-27

    申请号：US353316

    申请日：1989-05-17

    申请人： Zoltan K. Kun ,  Juris A. Asars ,  David Leksell ,  Robert Mazelsky

    发明人： Zoltan K. Kun ,  Juris A. Asars ,  David Leksell ,  Robert Mazelsky

    IPC分类号： B41J2/44 ,  B41J2/447 ,  B41J2/45 ,  B41J2/455 ,  G03G15/04 ,  G03G15/32 ,  G06K15/12 ,  G09F9/30 ,  H01L27/32 ,  H05B33/02 ,  H05B33/06 ,  H05B33/12

    CPC分类号： B41J2/45 ,  G03G15/04072 ,  G03G15/326 ,  G06K15/1247 ,  H05B33/06 ,  H05B33/12 ,  G03G15/043 ,  G03G2215/017

    摘要： A thin film electroluminescent edge emitter structure includes a common electrode layer and control electrodes disposed above the common electrode layer. At least one dielectric layer is disposed between the common electrode layer and control electrodes, and a phosphor layer is interposed between the one dielectric layer and common electrode layer. The common electrode layer, one dielectric layer and the phosphor layer define the light-emitting pixels of the emitter structure. Each pixel has a light-emitting face formed thereon and is operable upon application of electrical excitation to cause the radiation of light energy within its phosphor layer at least in a direction towards the pixel light-emitting face. An optical lens system associated with the pixels includes a preselected contour shaped on the light-emitting face of each pixel to define an optical lens integral therewith to project the light energy passed therethrough in a preselected direction and form a beam of light energy having a preselected beam pattern. A multi-color light emission system employed by the pixels includes a plurality of phosphor zones composing the phosphor layer and capable of projecting different light energy through the light-emitting faces of the pixels. Also, separate edge emitter structures projecting different colors of light can be utilized in a electrophotographic printer.

    摘要翻译： 薄膜电致发光边缘发射器结构包括公共电极层和设置在公共电极层上方的控制电极。 在公共电极层和控制电极之间设置至少一个电介质层，并且在一个电介质层和公共电极层之间插入荧光体层。 公共电极层，一个电介质层和荧光体层限定发射器结构的发光像素。 每个像素具有形成在其上的发光面，并且在施加电激励时可以至少在朝向像素发光面的方向上引起其荧光体层内的光能的辐射。 与像素相关联的光学透镜系统包括形状在每个像素的发光面上的预选轮廓，以限定与其成一体的光学透镜，以预选的方向投射穿过其中的光能，并形成具有预选的光束 光束图案。 由像素使用的多色发光系统包括构成荧光体层并能够通过像素的发光面投射不同光能的多个荧光体区域。 此外，在电子照相打印机中可以使用投射不同颜色的光的单独的边缘发射器结构。

    Thin film electroluminescent edge emitter structure with optical lens and multi-color light emission systems
    5.
    发明授权
    Thin film electroluminescent edge emitter structure with optical lens and multi-color light emission systems 失效
    具有光学透镜和多色发光系统的薄膜电致发光边缘发射器结构

    公开(公告)号：US5138347A

    公开(公告)日：1992-08-11

    申请号：US748993

    申请日：1991-08-22

    申请人： Zoltan K. Kun ,  Juris A. Asars ,  David Leksell ,  Robert Mazelsky

    发明人： Zoltan K. Kun ,  Juris A. Asars ,  David Leksell ,  Robert Mazelsky

    IPC分类号： B41J2/447 ,  B41J2/45 ,  G03G15/32 ,  G06K15/12 ,  H05B33/06 ,  H05B33/12

    CPC分类号： H05B33/12 ,  B41J2/45 ,  G03G15/04072 ,  G03G15/326 ,  G06K15/1247 ,  H05B33/06 ,  G03G2215/017

    摘要： A thin film electroluminescent edge emitter structure includes a common electrode layer and control electrodes disposed above the common electrode layer. At least one dielectric layer is disposed between the common electrode layer and control electrodes, and a phosphor layer is interposed between the one dielectric layer and common electrode layer. The common electrode layer, one dielectric layer and the phosphor layer define the light-emitting pixels of the emitter structure. Each pixel has a light-emitting face formed thereon and is operable upon application of electrical excitation to cause the radiation of light energy within its phosphor layer at least in a direction towards the pixel light-emitting face. An optical lens system associated with the pixels includes a preselected contour shaped on the light-emitting face of each pixel to define an optical lens integral therewith to project the light energy passed therethrough in a preselected direction and form a beam of light energy having a preselected beam pattern. A multi-color light emission system employed by the pixels includes a plurality of phosphor zones comprising the phosphor layer and capable of projecting different light energy through the light-emitting faces of the pixels. Also, separate edge emitter structures projecting different colors of light can be utilized in a electrophotographic printer.

    摘要翻译： 薄膜电致发光边缘发射器结构包括公共电极层和设置在公共电极层上方的控制电极。 在公共电极层和控制电极之间设置至少一个电介质层，并且在一个电介质层和公共电极层之间插入荧光体层。 公共电极层，一个电介质层和荧光体层限定发射器结构的发光像素。 每个像素具有形成在其上的发光面，并且在施加电激励时可以至少在朝向像素发光面的方向上引起其荧光体层内的光能的辐射。 与像素相关联的光学透镜系统包括形状在每个像素的发光面上的预选轮廓，以限定与其成一体的光学透镜，以预选的方向投射穿过其中的光能，并形成具有预选的光束 光束图案。 由像素使用的多色发光系统包括多个荧光体区，该荧光体区包括荧光体层，并能够通过像素的发光面投射不同的光能。 此外，在电子照相打印机中可以使用投射不同颜色的光的单独的边缘发射器结构。

    Precious metal doped crystals for hardening of the crystals
    9.
    发明授权
    Precious metal doped crystals for hardening of the crystals 失效
    用于硬化晶体的贵金属掺杂晶体

    公开(公告)号：US4955699A

    公开(公告)日：1990-09-11

    申请号：US276093

    申请日：1988-11-23

    申请人： Narsingh B. Singh ,  Tom Henningsen ,  Robert Mazelsky ,  Richard H. Hopkins ,  Milton S. Gottlieb

    发明人： Narsingh B. Singh ,  Tom Henningsen ,  Robert Mazelsky ,  Richard H. Hopkins ,  Milton S. Gottlieb

    IPC分类号： C30B11/00 ,  G02F1/00

    CPC分类号： G02F1/0018 ,  C30B11/00 ,  C30B29/46

    摘要： Disclosed is a crystal 1 of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, cadmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphoride, indium arsenide, or mixtures thereof, doped with a precious metal in an amount of about 25 ppm up to the solubility limit of a precious metal in the crystal. The crystal is useful in nonlinear optical devices, acousto-optical devices, piezoelectric devices, and other types of optical and acoustic devices.

    摘要翻译： 公开了铊砷化钪，硫化铊硫化物，铊硫化钒，硒化锇，硒化镉，硫化镉，硒化镉，砷化镉锡，砷化镉砷，磷化铟，砷化铟或其混合物的晶体1，掺杂 其中贵金属的量约为25ppm，高达贵金属在晶体中的溶解度极限。 该晶体在非线性光学器件，声光器件，压电器件和其他类型的光学和声学器件中是有用的。