Invention Grant
- Patent Title: Resistive connecting contact for a silicon semiconductor component
- Patent Title (中): 硅半导体元件的电阻连接接点
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Application No.: US39217473Application Date: 1973-08-28
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Publication No.: US3893160APublication Date: 1975-07-01
- Inventor: BOTZENHARDT LEONHARD
- Applicant: LICENTIA GMBH
- Assignee: Licentia Patent-Verwaltungs-GmbH
- Current Assignee: Licentia Patent-Verwaltungs-GmbH
- Priority: DE2244062 1972-09-08
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L21/00 ; H01L21/28 ; H01L23/532 ; H01L3/00 ; H01L5/00
Abstract:
A resistive connecting contact for a silicon semiconductor component comprises, on the semiconductor body, a layer sequence platinum silicide-titanium-molybdenum-gold. The invention also includes a method of making such a connecting contact.
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