公开(公告)号：US20070267660A1

公开(公告)日：2007-11-22

申请号：US11744574

申请日：2007-05-04

申请人： Radu Surdeanu

发明人： Radu Surdeanu

IPC分类号： H01L29/78

CPC分类号： H01L21/26506 ,  H01L21/02667 ,  H01L21/2026 ,  H01L21/26513 ,  H01L21/268 ,  Y10S438/916

摘要： Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is amorphized, after which the region is implanted with a first dopant at a first doping concentration. Then a solid phase epitaxy regrowth step is performed on a thin layer of desired thickness of the amorphized region, in order to activate the first dopant only in this thin layer. Subsequently, a second dopant is implanted in the remaining amorphous region at a second doping concentration. Subsequent annealing of the substrate activates the second dopant only in said remaining region, so a very abrupt transition between dopant characteristics of the thin layer with first dopant and the region with the second dopant is obtained.

摘要翻译： 公开了具有薄且明确限定的活化掺杂剂层的层状结构的半导体器件的方法。 在优选的方法中，半导体衬底中的区域是非晶化的，之后在第一掺杂浓度下注入第一掺杂剂区域。 然后在非晶形区域的所需厚度的薄层上进行固相外延再生步骤，以便仅在该薄层中激活第一掺杂剂。 随后，第二掺杂剂以第二掺杂浓度注入剩余的非晶区。 衬底的随后的退火仅在所述剩余区域中激活第二掺杂物，因此获得具有第一掺杂剂的薄层的掺杂剂特性与具有第二掺杂剂的区域之间的非常突然的转变。

公开(公告)号：US20050112831A1

公开(公告)日：2005-05-26

申请号：US10966145

申请日：2004-10-15

申请人： Radu Surdeanu

发明人： Radu Surdeanu

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/26506 ,  H01L21/2026 ,  H01L21/26513 ,  H01L21/268 ,  Y10S438/916

摘要： Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is amorphized, after which the region is implanted with a first dopant at a first doping concentration. Then a solid phase epitaxy regrowth step is performed on a thin layer of desired thickness of the amorphized region, in order to activate the first dopant only in this thin layer. Subsequently, a second dopant is implanted in the remaining amorphous region at a second doping concentration. Subsequent annealing of the substrate activates the second dopant only in said remaining region, so a very abrupt transition between dopant characteristics of the thin layer with first dopant and the region with the second dopant is obtained.

摘要翻译： 公开了具有薄且明确限定的活化掺杂剂层的层状结构的半导体器件的方法。 在优选的方法中，半导体衬底中的区域是非晶化的，之后在第一掺杂浓度下注入第一掺杂剂区域。 然后在非晶形区域的所需厚度的薄层上进行固相外延再生步骤，以便仅在该薄层中激活第一掺杂剂。 随后，第二掺杂剂以第二掺杂浓度注入剩余的非晶区。 衬底的随后的退火仅在所述剩余区域中激活第二掺杂物，因此获得具有第一掺杂剂的薄层的掺杂剂特性与具有第二掺杂剂的区域之间的非常突然的转变。

公开(公告)号：US06599772B2

公开(公告)日：2003-07-29

申请号：US09826144

申请日：2001-04-04

申请人： Hideshi Abe

发明人： Hideshi Abe

IPC分类号： H01L27148

CPC分类号： H01L27/14887 ,  H01L27/14812 ,  H01L27/14818 ,  Y10S438/916

摘要： A solid-state pickup element achieves both improvement in sensitivity and reduction of pixel size and a method thereof, includes a first conductive type semiconductor area, which is formed at least so as to include the inside of the semiconductor substrate upward of the overflow barrier area inside the semiconductor substrate, and a charge accumulating area at the position corresponding to the first conductive type semiconductor area of the light receptive sensor part in the epitaxial layer on the semiconductor substrate. An overflow barrier area is formed in the semiconductor substrate, and the first conductive type semiconductor area is formed on the surface, respectively, wherein an epitaxial layer is formed on the semiconductor substrate, and a charge accumulating area is formed at the position corresponding to the first conductive type semiconductor area on the surface side of the epitaxial layer, thereby producing a solid-state pickup element.

摘要翻译： 固体拾取元件既可实现灵敏度的提高，也可实现像素尺寸的缩小，其方法包括：第一导电型半导体区域，其至少形成为将半导体衬底的内部包围在溢流阻挡区域的上方 以及与半导体衬底上的外延层中的光接收传感器部分的第一导电类型半导体区域对应的位置处的电荷累积区域。 在半导体衬底中形成溢出屏障区域，并且在表面上分别形成第一导电型半导体区域，其中在半导体衬底上形成外延层，并且在对应于半导体衬底的位置形成电荷累积区域 在外延层的表面侧的第一导电型半导体区域，由此产生固态拾取元件。

公开(公告)号：US20010031544A1

公开(公告)日：2001-10-18

申请号：US09828890

申请日：2001-04-10

发明人： Tomoko Matsuda

IPC分类号： H01L021/261 ,  H01L021/425 ,  H01L021/26 ,  H01L021/324

CPC分类号： H01L21/324 ,  Y10S438/916

摘要： When the temperature of a silicon substrate is increased, a first annealing gas which is mainly composed of argon or the like that does not react with said silicon substrate with a trace of oxygen added thereto, is supplied to the position of the silicon substrate to prevent any unwanted reaction from occurring on the silicon substrate whose temperature is increasing. When the temperature of the silicon substrate is lowered, a second annealing gas which is mainly composed of nitrogen or the like which has a high thermal conductivity is supplied to the silicon substrate to quickly lower the temperature of the silicon substrate and prevent a doped impurity from being undesirably diffused.

摘要翻译： 当硅衬底的温度升高时，向硅衬底的位置提供主要由氩等形成的不与所述硅衬底反应的第一退火气体，其中所述硅衬底具有微量的氧，以防止 在温度升高的硅基板上发生任何不希望的反应。 当硅衬底的温度降低时，向硅衬底提供主要由氮等形成的具有高导热性的第二退火气体，以快速降低硅衬底的温度并防止掺杂杂质 不期望地扩散。

公开(公告)号：US4379005A

公开(公告)日：1983-04-05

申请号：US348526

申请日：1982-02-12

申请人： Harold J. Hovel ,  Jerry M. Woodall

发明人： Harold J. Hovel ,  Jerry M. Woodall

IPC分类号： H01L21/285 ,  H01L21/337 ,  H01L29/812 ,  H01L21/24

CPC分类号： H01L29/66924 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/812 ,  Y10S438/916

摘要： Semiconductor devices can be fabricated using as an intermediate manufacturing structure a substrate of one semiconductor with a thin epitaxial surface layer of a different semiconductor with properties such that the semiconductors each have different solubilities with respect to a metal. When a vertical differentiation is used to expose the different materials and the metal is deposited on both and heated, the metal will form a Schottky barrier in one material and an ohmic contact in the other. Where the substrate is gallium arsenide and the epitaxial layer is gallium aluminum arsenide and the metal is tin, a self-aligned gallium arsenide MESFET is formed wherein the tin forms ohmic contacts with the gallium arsenide and a Schottky barrier contact with the gallium aluminum arsenide.

摘要翻译： 可以使用具有不同半导体的薄外延表面层的半导体衬底作为中间制造结构来制造半导体器件，其性能使得半导体对于金属具有不同的溶解度。 当使用垂直分化来暴露不同的材料并且金属沉积在两者上并被加热时，金属将在一种材料中形成肖特基势垒并在另一种材料中形成欧姆接触。 在衬底是砷化镓并且外延层是砷化镓铝并且金属是锡的情况下，形成自对准的砷化镓MESFET，其中锡与砷化镓形成欧姆接触，并与砷化镓砷化物进行肖特基势垒接触。

公开(公告)号：US4371967A

公开(公告)日：1983-02-01

申请号：US215665

申请日：1980-12-12

申请人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

发明人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/305 ,  H01S5/32308 ,  Y10S438/916

摘要： In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.

摘要翻译： 在半导体衬底上具有包括有源层的外延层的半导体激光器中，形成与有源层相邻的缓冲层，以便防止高度扩散的掺杂​​剂（Zn）从相邻层（例如 作为第二包覆层。 缓冲层具有与相邻层相同的导电性，具有比有源层更宽的能隙，并且缓冲层的掺杂剂比相邻层的扩散更少。

公开(公告)号：US4236947A

公开(公告)日：1980-12-02

申请号：US40643

申请日：1979-05-21

申请人： Bantval J. Baliga

发明人： Bantval J. Baliga

IPC分类号： C30B19/02 ,  H01L21/208

CPC分类号： H01L21/02381 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S438/916 ,  Y10S438/925 ,  Y10S438/936

摘要： High quality p-n junctions are formed in silicon grown epitaxially onto a silicon substrate of one conductivity type from a melt undersaturated with silicon and containing opposite conductivity type determining impurities. Lowering the substrate into the melt causes same of the substrate dopant to enter the melt. With a substrate doping level exceeding that of the epitaxial layer that would grow in the absence of meltback, the epitaxial layer initially grows with the one conductivity type. However, as epitaxial layer thickness increases, the substrate dopant atoms in the melt are consumed and the epitaxial layer grown thereafter is of opposite conductivity type, producing a p-n junction in the epitaxial layer away from the substrate.

摘要翻译： 高品质的p-n结形成在外延生长在一个导电类型的硅衬底上的硅中，该硅衬底由硅不饱和并且含有相反导电类型的确定杂质。 将基材降低到熔体中导致基材掺杂剂的相同物质进入熔体。 衬底掺杂水平超过在不存在熔融反射的情况下生长的外延层的衬底掺杂水平，外延层最初以一种导电类型生长。 然而，随着外延层厚度增加，熔体中的衬底掺杂剂原子被消耗，此后生长的外延层具有相反的导电类型，在外延层中离开衬底产生p-n结。

公开(公告)号：US3909317A

公开(公告)日：1975-09-30

申请号：US38365373

申请日：1973-07-30

申请人： MATSUSHITA ELECTRONICS CORP

发明人： ITOH KUNIO ,  INOUE MORIO

IPC分类号： C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

CPC分类号： C30B19/063 ,  C30B19/064 ,  C30B19/10 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/006 ,  Y10S148/025 ,  Y10S148/107 ,  Y10S438/916

摘要： In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.

摘要翻译： 在诸如通过液相外延生长形成的半导体激光器件的多层半导体器件的制造中，提供以下改进，即，通过使半导体衬底接触第一半导体溶液形成第一外延生长层之后，以及 在通过使所述第一层与第二半导体溶液接触来形成第二外延生长层之前，使所述第一层与第三半导体溶液或液态金属接触，由此在形成在第二半导体溶液之间的结处附近的杂质浓度的斜率 第一层和第二层可以令人满意地陡峭，从而获得良好的性能。

公开(公告)号：US3669769A

公开(公告)日：1972-06-13

申请号：US3669769D

申请日：1970-09-29

申请人： IBM

发明人： BADAMI ANGELO V ,  EBERT EKKEHARD ,  KEMLAGE BERNARD M ,  KROELL KARL E ,  POGGE H BERNHARD

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L21/22 ,  H01L7/36 ,  C23C13/00

CPC分类号： C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/145 ,  Y10S438/916

摘要： AUTODOPING IS MINIMIZED DURING THE GROWTH OF AN EPITAXIAL LAYER OF A SEMICONDUCTOR SUBSTRATE BY USING A GASEOUS REACTION MIXTURE THAT DEPOSITS THE INITIAL CAPPING LAYER AT A RELATIVELY SLOW DEPOSITION RATE. THE REACTION MIXTURE CONTAINS A RELATIVELY MINOR PORTION OF A SEMICONDUCTOR COMPOUND ALONG WITH THE CARRIER GAS. SUBSEQUENTLY, A SECOND GASEOUS REACTION MIXTURE CONTAINING A GREATER PORTION OF A COMPOUND OF A SEMICONDUCTOR MATERIAL IS USED TO COMPLETE THE DEPOSITION OF THE EPITXIAL LAYER. THIS IS DONE MERELY TO REDUCE THE TOTAL GROWTH CYCLE.

公开(公告)号：US3649387A

公开(公告)日：1972-03-14

申请号：US3649387D

申请日：1969-06-20

申请人： PHILIPS CORP

发明人： FRENTZ HERMAN ,  WEIJLAND BERNARD HENDRIK

IPC分类号： H01L21/00 ,  H01L21/22 ,  H01L29/00 ,  H01L29/73 ,  H01L7/44

CPC分类号： H01L29/00 ,  H01L21/00 ,  H01L21/22 ,  H01L29/73 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/043 ,  Y10S148/049 ,  Y10S148/06 ,  Y10S148/106 ,  Y10S148/145 ,  Y10S148/151 ,  Y10S438/916

摘要： IN THE MANUFACTURING OF A SEMICONDUCTOR DEVICE IN WHICH A SEMICONDUCTOR BODY IS LOCALLY DOPPED BY DIFFUSION FROM A MASKING MATERIAL WHICH COMPRISES AN IMPURITY, THE INCIDENTAL DIFFUSION OF THE IMPURITY FROM THE MASKING MATERIAL INTO A SURFACE OF THE SEMICONDUCTOR BODY WHICH IS UNMASKED IS CHECKED BY PERFORMING THE DIFFUSION PROCESS IN THE PRESENCE OF A POWDER OF A SEMICONDUCTOR MATERIAL. THIS METHOD ALSO PERMITS THE DIFFUSION OF TWO OR MORE IMPURITIES DURING A SINGLE DIFFUSION PROCESS.