公开(公告)号：US07497911B2

公开(公告)日：2009-03-03

申请号：US11464779

申请日：2006-08-15

Applicant: Anthony A. Primavera ,  Vijesh Unnikrishnan ,  David J. Smith

Inventor： Anthony A. Primavera ,  Vijesh Unnikrishnan ,  David J. Smith

IPC: C23C13/00

CPC classification number: H01L21/4846 ,  H01L23/4985 ,  H01L23/5387 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Apparatus and methods for flattening thin substrate surfaces by stretching thin flexible substrates to which ICs can be bonded. Various embodiments beneficially maintain the substrate flatness during the assembly process through singulation. According to one embodiment, the use of a window frame type component carrier allows processing of thin laminates and flex films through various manufacturing processes. The flexible substrate is bonded to a rigid carrier. The carrier is placed into a specialized fixture comprising a bottom plate and a top plate. The bottom plate with raised regions is created that allows the windowed region of the flex film to be pressed flat. After aligning the top plate, the bottom plate, and the middle structure, the plates are pressed together causing the raised regions to push the flex film substrate upward and around the carrier. By pressing the thin substrate upward, the substrate is stretched like a drum head over the raised sections of the bottom plate, thereby flattening the substrate. The die assembly site is held flat overtop of the raised portion of the carrier to provide a stable vase for placement of the die.

Abstract translation: 通过拉伸IC可以结合的薄柔性基板来平坦化薄基板表面的装置和方法。 各种实施方案通过单分割有利地在组装过程中保持基材的平整度。 根据一个实施例，使用窗框型组件载体允许通过各种制造工艺处理薄层压板和柔性膜。 柔性基底结合到刚性载体上。 载体被放置在包括底板和顶板的专用夹具中。 产生具有凸起区域的底板，其允许柔性膜的窗口区域被压平。 在对准顶板，底板和中间结构之后，将板压在一起，使得凸起区域将柔性薄膜基板向上和围绕载体推动。 通过向上按压薄基板，基板在底板的凸起部分上像鼓头一样被拉伸，从而使基板变平。 模具组装位置被保持在载体的凸起部分的顶部上，以提供用于放置模具的稳定的花瓶。

公开(公告)号：US4539231A

公开(公告)日：1985-09-03

申请号：US503196

申请日：1979-04-16

Applicant: Wolfgang Betz ,  Werner Huther

Inventor： Wolfgang Betz ,  Werner Huther

IPC: B22F3/12 ,  C04B35/593 ,  C04B35/645 ,  C04B41/50 ,  C04B41/87 ,  B05D1/18 ,  B05D3/00 ,  C23C11/00 ,  C23C13/00

CPC classification number: C04B41/009 ,  B22F3/1266 ,  C04B35/593 ,  C04B35/645 ,  C04B41/5066 ,  C04B41/87

Abstract: The present invention provides a method for encapsulating a ceramic moulding, preferably a silicon ceramic moulding such that the encapsulated mouldings can be subjected to hot isostatic pressing without causing the pressure-transfer medium to penetrate into the pores of the moulding. Encapsulation is achieved by first evacuating the moulding, then filling it with nitrogen gas and thereafter immersing it in a silicon (Si) melt. In a preferred aspect the moulding is filled with nitrogen gas under positive pressure. Once the silicon melt has been deposited, pressure can be allowed to act on it externally.

Abstract translation: PCT No.PCT / DE78 / 00001 Sec。 371日期1979年4月16日 102（e）日期1979年4月16日PCT提交1978年6月1日PCT公布。 出版物WO79 / 00101 PCT 日期为1979年3月8日。本发明提供一种封装陶瓷模制件，优选硅陶瓷模制件的方法，使得封装的模制品可以经受热等静压，而不会使压力传递介质渗透到 成型。 通过首先将模制物抽出，然后用氮气填充，然后将其浸入硅（Si）熔体中来实现封装。 在优选的方面，模塑件在正压下用氮气填充。 一旦沉积了硅熔体，就可以在外部施加压力。

公开(公告)号：US4537794A

公开(公告)日：1985-08-27

申请号：US626056

申请日：1984-06-29

Applicant: Eduard Pinkhasov

Inventor： Eduard Pinkhasov

IPC: C04B41/81 ,  C23C14/32 ,  F03H99/00 ,  H01J37/32 ,  H05K1/03 ,  H05K3/38 ,  B05B1/24 ,  C23C13/00

CPC classification number: F03H99/00 ,  C04B41/81 ,  C23C14/325 ,  H01J37/32 ,  H05K1/0306 ,  H05K3/38

Abstract: The adhesion of conductive layers to ceramic substrates in the application of such layers by low-energy techniques is improved by interposing between the high-conductivity metal layer and the substrate a layer of a refractory metal which is preferably also applied by low-energy vaporization. The metal layers can be provided in succession by reversing the polarity of electrodes composed of the metals of these layers which strike an arc vaporizing the metal to be deposited.

Abstract translation: 通过在高导电性金属层和衬底之间插入优选也通过低能量蒸发施加的难熔金属层来改善导电层对陶瓷衬底在通过低能量技术施加这种层的粘合性。 可以通过使由这些层的金属构成的电极的极性反转，从而使金属层连续地提供，该极性使得要沉积的金属发生电弧蒸发。

公开(公告)号：US4444812A

公开(公告)日：1984-04-24

申请号：US172509

申请日：1980-07-28

Applicant: Henry W. Gutsche

Inventor： Henry W. Gutsche

IPC: C01B33/02 ,  C01B33/035 ,  C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B25/14 ,  C30B25/18 ,  C30B29/06 ,  C23C11/00 ,  C23C13/00

CPC classification number: C30B25/18 ,  C01B33/035 ,  C30B25/025 ,  C30B25/10 ,  C30B25/14 ,  Y10S117/906

Abstract: A process for producing electronic-grade silicon bodies is disclosed wherein continuously-pulled slim rods which can be formed in situ from the reaction of a seed crystal and a molten silicon source, are pulled into and through a chemical vapor deposition chamber, having in combination different gas curtains along the chamber inner wall, the slim rod surfaces being preheated before entry into the deposition chamber where the rods are simultaneously exposed to heating and thermally decomposable gaseous silicon compounds in order to provide suitable surface reaction conditions on the slim rods for the decomposition of the gaseous silicon compounds resulting in deposition growth upon the surfaces of the rods.

Abstract translation: 公开了一种用于生产电子级硅体的方法，其中可以从晶种和熔融硅源的反应原位形成的连续拉伸的细棒被拉入并通过化学气相沉积室，其具有组合 不同的气帘沿着室内壁，细杆表面在进入沉积室之前被预热，其中杆同时暴露于加热和可热分解的气态硅化合物中，以便在细长杆上提供合适的表面反应条件用于分解 的气态硅化合物导致在棒表面上沉积生长。

公开(公告)号：US4413022A

公开(公告)日：1983-11-01

申请号：US50606

申请日：1979-06-21

Applicant: Tuomo S. Suntola ,  Arto J. Pakkala ,  Sven G. Lindfors

Inventor： Tuomo S. Suntola ,  Arto J. Pakkala ,  Sven G. Lindfors

IPC: C30B23/02 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C30B23/08 ,  C30B25/02 ,  C30B25/14 ,  H01L21/02 ,  H01L21/205 ,  C23C11/00 ,  C23C13/00

CPC classification number: C23C16/45546 ,  C23C16/306 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45544 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48

Abstract: A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.

Abstract translation: 提供了一种方法和装置，用于通过交替重复包含该化合物的物质的分开的表面反应来进行化合物薄膜的生长。 载气影响要彼此分离的表面反应步骤之间的扩散阻挡层。 气相扩散阻挡层也用于将不同反应蒸气的源区彼此和从表面反应区分开。

公开(公告)号：US4352840A

公开(公告)日：1982-10-05

申请号：US207246

申请日：1980-11-17

Applicant: G. Kelly Sievers

Inventor： G. Kelly Sievers

IPC: F01D5/28 ,  C23C10/28 ,  C23C10/52 ,  C23C12/02 ,  C23C11/00 ,  C23C13/00

CPC classification number: C23C10/52 ,  C23C10/28 ,  C23C12/02

Abstract: In the method of forming diffusion coatings for improved corrosion, erosion or wear properties in high performance alloy structures, the coatings being characterized by the intimate presence of an interdispersed phase material in desired amount to enhance one or more of these properties, which includes interdiffusing under non-oxidizing conditions a portion of the structure surface and an alloying element disposed therewith, such as aluminum, in a diffusion pack of predetermined composition desirable for the interdiffusion, the improvement comprising maintaining the desired amount of interdispersed phase material relatively richly concentrated within a selected pack zone corresponding to the locus of interdiffusion for intimate diffusion coating interdispersal from the pack zone in interdiffusion responsive relation and freely of varying the predetermined composition of the pack.

Abstract translation: 在形成用于改善高性能合金结构中的腐蚀，侵蚀或磨损性能的扩散涂层的方法中，涂层的特征在于以期望的量密切存在分散相材料，以增强这些性能中的一种或多种，​​其包括在 非氧化条件是结构表面的一部分和与其配合的合金元素，例如铝，用于相互扩散所需的预定组成的扩散包装中，改进包括将期望量的分散相材料相对富集地集中在选定的 包装区域对应于相互扩散的轨迹，用于在相互扩散响应关系中从包装区域分散的粘性扩散涂层，并自由地改变包装的预定组成。

公开(公告)号：US4335160A

公开(公告)日：1982-06-15

申请号：US213039

申请日：1980-12-04

Applicant: Michael P. Neary ,  Thomas A. Wilson

Inventor： Michael P. Neary ,  Thomas A. Wilson

IPC: B01J19/12 ,  B01J37/34 ,  B05D7/24 ,  C10G9/00 ,  C22B9/22 ,  C23C16/48 ,  C23C16/517 ,  C30B25/10 ,  C30B31/12 ,  F02B75/02 ,  F02M27/04 ,  F23C99/00 ,  B05D3/06 ,  C23C11/00 ,  C23C13/00

CPC classification number: F23C99/001 ,  B01J19/121 ,  B01J37/341 ,  B05D1/62 ,  C10G9/00 ,  C22B9/221 ,  C22B9/223 ,  C22B9/226 ,  C23C16/483 ,  C23C16/517 ,  C30B25/105 ,  C30B31/12 ,  F02M27/04 ,  F02B2075/027

Abstract: This invention relates to a new manner of carrying out chemical reactions by injection of selected forms of energy into the reaction zone by novel means. By applying this principal, many new processes result with application in a large number of different industries. The new process is generally capable of operation at room temperatures, which has advantages in the creation of certain sensitive products including uniformly doped semi-conductors, new catalysts, pure gases, high purity materials of any kind, controlled coatings, new polymers, combustion enhancement, difficult separation, petroleum refinery operations, and carrying out any reaction in which the injection of specific energy types is helpful.

Abstract translation: 本发明涉及通过新的方法将选定形式的能量注入反应区域来进行化学反应的新方式。 通过应用该主体，许多新的过程可以应用于大量不同的行业。 新工艺通常能够在室温下运行，这在创造某些敏感产品方面具有优势，包括均匀掺杂的半导体，新催化剂，纯气体，任何类型的高纯度材料，受控涂层，新聚合物，燃烧增强 ，分离困难，炼油作业，以及进行特定能源类型注入有利的任何反应。

公开(公告)号：US4278710A

公开(公告)日：1981-07-14

申请号：US69654

申请日：1979-08-27

Applicant: Edward C. Jelks

Inventor： Edward C. Jelks

IPC: C23C14/04 ,  C23C11/00 ,  C23C13/00

CPC classification number: C23C14/042

Abstract: An apparatus and method are provided for depositing submicron patterns on a substrate. The apparatus includes an evaporative source located opposite the substrate so that molecules from the source can be deposited directly on the substrate. A mask is located between the evaporative source and the substrate, the mask having openings which correspond to the desired pattern to be deposited on the substrate. A plate is located between the mask and the substrate, the plate having an aperture for allowing evaporated molecules to be deposited on the substrate according to the pattern of the mask.

Abstract translation: 提供了一种用于在衬底上沉积亚微米图案的装置和方法。 该装置包括位于衬底相对的蒸发源，使得来自源的分子可以直接沉积在衬底上。 掩模位于蒸发源和衬底之间，掩模具有对应于要沉积在衬底上的期望图案的开口。 板位于掩模和基板之间，板具有用于根据掩模的图案使蒸发的分子沉积在基板上的孔。

公开(公告)号：US4269137A

公开(公告)日：1981-05-26

申请号：US22018

申请日：1979-03-19

Applicant: Richard I. Johnson

Inventor： Richard I. Johnson

IPC: B41M5/24 ,  C23C14/02 ,  C23C13/00 ,  C23C17/00

CPC classification number: C23C14/022 ,  B41M5/24

Abstract: To facilitate the ion bombardment of a substrate surface as a pretreatment step prior to depositing thin films in a high vacuum evaporation system, a thermionic electron source is placed in the cathode electrode used to generate the plasma that provides the ion bombardment. The thermionic electron source does not interfere with the basic function of the plasma system. Its main effect is to enhance the plasma efficiency by injecting electrons into the surrounding space, reducing charging effects on surfaces, neutralizing the plasma cloud, causing less plasma dispersion, and perhaps, most importantly, allowing the plasma to be sustained at lower pressures and higher voltages resulting in greater ion energies and mobility for improved surface bombardment.Other electron sources, such as, a cathode ray accelerator as a beta emitter, may be positioned to simultaneously or independently, to inject electrons into the plasma and to direct electrons toward the substrate surface to neutralize surface charge.

Abstract translation: 为了便于在高真空蒸发系统中沉积薄膜之前作为预处理步骤的基板表面的离子轰击，将热离子电子源放置在用于产生提供离子轰击的等离子体的阴极中。 热离子电子源不会干扰等离子体系统的基本功能。 其主要作用是通过将电子注入周围空间来提高等离子体效率，减少对表面的充电效应，中和等离子体云，导致较少的等离子体分散，或许最重要的是允许等离子体在较低的压力和更高的温度下维持 电压导致更大的离子能量和迁移率，以改善表面轰击。 其他电子源，例如作为β发射体的阴极射线加速器可以被定位成同时或独立地将电子注入到等离子体中并将电子引向衬底表面以中和表面电荷。

公开(公告)号：US4181161A

公开(公告)日：1980-01-01

申请号：US951241

申请日：1978-10-13

Applicant: Thaddaus Kraus

Inventor： Thaddaus Kraus

IPC: B01J3/00 ,  C23C14/56 ,  B65B31/00 ,  C23C13/00

CPC classification number: B01J3/006 ,  C23C14/564

Abstract: A method of producing a high vacuum in a container which has limiting wallshich define a reaction chamber which is adapted to be evacuated for vacuum processing purposes, and in which gases are sorbed during vacuum operation and the gases are removed subsequently by increasing the temperature of the walls and evacuating the chamber at the same time includes heating the reaction chamber, sensing the underpressure in the reaction chamber and controlling the heating of the chamber in accordance with the sensed pressure in a manner such that the underpressure remains within a preselected upper and lower limit value until a predetermined temperature of the walls is attained.

Abstract translation: 一种在容器中产生高真空的方法，该容器具有限定壁，该限定壁限定反应室，该反应室适于真空处理目的被抽真空，并且其中气体在真空操作期间被吸收，并且随后通过增加气体的温度 墙壁和同时抽空室包括加热反应室，感测反应室中的负压，并根据感测到的压力控制室的加热，使得负压保持在预选的上部和下部 直到达到壁的预定温度为止。