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    Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell
    6.
    发明授权
    Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell 有权
    存储单元，非易失性存储器阵列，操作存储器单元的方法，写入存储器单元和从存储单元写入的方法以及编程存储器单元的方法

    公开(公告)号：US09275728B2

    公开(公告)日：2016-03-01

    申请号：US14132081

    申请日：2013-12-18

    申请人： Micron Technology, Inc.

    发明人： Bhaskar Srinivasan ,  Gurtej S. Sandhu

    IPC分类号： G11C11/00 ,  G11C13/00 ,  H01L27/10 ,  H01L45/00

    CPC分类号： G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/12 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/56 ,  G11C2213/77 ,  H01L27/101 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1206

    摘要： In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.

    摘要翻译： 一方面，操作存储单元的方法包括使用不同的电极来改变存储器单元的编程状态，而不是用于读取存储器单元的编程状态。 在一个方面，存储单元包括第一和第二相对电极，其间具有接收在其间的材料。 该材料具有彼此不同组成的第一和第二横向区域。 第一和第二横向区域中的一个沿着材料的两个横向相对的边缘中的一个被接收。 第一和第二横向区域中的另一个沿着材料的所述两个横向相对的边缘中的另一个被容纳。 第一和第二横向区域中的至少一个能够被重复编程至至少两个不同的阻力状态。 公开了其他方面和实现。

    Two-terminal memory with intrinsic rectifying characteristic
    8.
    发明授权
    Two-terminal memory with intrinsic rectifying characteristic 有权
    具有固有整流特性的双端存储器

    公开(公告)号：US09196831B2

    公开(公告)日：2015-11-24

    申请号：US14108160

    申请日：2013-12-16

    申请人： Crossbar, Inc.

    发明人： Sung Hyun Jo

    IPC分类号： H01L45/00 ,  G11C13/00 ,  H01L27/24

    CPC分类号： H01L45/1608 ,  G11C13/0011 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/51 ,  G11C2213/54 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148

    摘要： Providing for two-terminal memory having an inherent rectifying characteristic(s) is described herein. By way of example, the two-terminal memory can be a resistive switching device having one or more “on” states and an “off” state, to facilitate storage of digital information. A conductive filament can be electrically isolated from an electrode of the two-terminal memory by a thin tunneling layer, which permits a tunneling current for voltages greater in magnitude than a positive rectifying voltage or a negative rectifying voltage. The two-terminal memory cell can therefore have high resistance to small voltages, mitigating leakage currents in an array of the two-terminal memory cells. In addition, the memory cell can be conductive above a rectifying voltage, enabling reading of the memory cell in response to a suitable read bias, and erasing of the memory cell in response to a suitable negative erase bias.

    摘要翻译： 本文描述了提供具有固有整流特性的双端存储器。 作为示例，两端存储器可以是具有一个或多个“导通”状态和“关闭”状态的电阻式开关器件，以便于数字信息的存储。 导电丝可以通过薄隧道层与双端存储器的电极电隔离，这允许隧道电流的幅度大于正整流电压或负整流电压的幅度。 因此，双端存储器单元可以具有对小电压的高电阻，从而减轻了两端存储单元阵列中的漏电流。 此外，存储器单元可以在整流电压之上导电，使得能够响应于适当的读偏置读取存储单元，以及响应于合适的负擦除偏置来擦除存储单元。