公开(公告)号：US20170271410A1

公开(公告)日：2017-09-21

申请号：US15500049

申请日：2015-02-11

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Minxian Max Zhang ,  Kathryn Samuels ,  Jianhua Joshua Yang ,  R. Stanley Williams ,  Zhiyong Li

IPC: H01L27/24

CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/14 ,  H01L45/146

Abstract: Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.

公开(公告)号：US20160218285A1

公开(公告)日：2016-07-28

申请号：US14914808

申请日：2013-09-05

Applicant: HEWLETT-PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Shih-Yuan Wang ,  Jianhua Yang ,  Minxian Max Zhang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1608

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

Abstract translation: 可以提供一种忆阻器结构，其包括设置在第一电极上的第一电极，第二电极和缓冲层。 忆阻器结构可以包括插入在第二电极和缓冲层之间的开关层，当施加电压时，形成从第二电极延伸到缓冲层并形成肖特基状接触的长丝或路径 灯丝与缓冲层之间的异质结。

公开(公告)号：US10147762B2

公开(公告)日：2018-12-04

申请号：US15316762

申请日：2014-06-26

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Minxian Max Zhang ,  Jianhua Yang ,  R. Stanley Williams

IPC: H01L45/00 ,  H01L27/24 ,  H01L27/02

Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.

公开(公告)号：US20170271409A1

公开(公告)日：2017-09-21

申请号：US15329913

申请日：2015-01-29

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Ning Ge ,  Katy Samuels ,  Minxian Max Zhang

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2418 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625

Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.

公开(公告)号：US10096651B2

公开(公告)日：2018-10-09

申请号：US15329913

申请日：2015-01-29

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Ning Ge ,  Katy Samuels ,  Minxian Max Zhang

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00 ,  G11C11/16

Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.

公开(公告)号：US09793473B2

公开(公告)日：2017-10-17

申请号：US14914808

申请日：2013-09-05

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Shih-Yuan Wang ,  Jianhua Yang ,  Minxian Max Zhang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

IPC: H01L47/00 ,  H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1608

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

公开(公告)号：US20170271589A1

公开(公告)日：2017-09-21

申请号：US15329801

申请日：2015-01-26

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Minxian Max Zhang ,  Jianhua Yang ,  Zhiyong Li ,  R. Stanley Williams

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/146 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1633 ,  H01L45/1641

Abstract: A resistive memory array includes a plurality of resistive memory devices. A sneak path current in the resistive memory array is reduced when a negative temperature coefficient of resistance material is incorporated in series with a negative differential resistance selector that is in series with a memristor switching material at a junction formed at a cross-point between two conductors of one of the plurality of resistive memory devices.