公开(公告)号：US09793473B2

公开(公告)日：2017-10-17

申请号：US14914808

申请日：2013-09-05

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Shih-Yuan Wang ,  Jianhua Yang ,  Minxian Max Zhang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

IPC: H01L47/00 ,  H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1608

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

公开(公告)号：US20160218285A1

公开(公告)日：2016-07-28

申请号：US14914808

申请日：2013-09-05

Applicant: HEWLETT-PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Shih-Yuan Wang ,  Jianhua Yang ,  Minxian Max Zhang ,  Alexandre M. Bratkovski ,  R. Stanley Williams

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1608

Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

Abstract translation: 可以提供一种忆阻器结构，其包括设置在第一电极上的第一电极，第二电极和缓冲层。 忆阻器结构可以包括插入在第二电极和缓冲层之间的开关层，当施加电压时，形成从第二电极延伸到缓冲层并形成肖特基状接触的长丝或路径 灯丝与缓冲层之间的异质结。