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    Microcoaxial probes made from strained semiconductor bilayers
    1.
    发明申请
    Microcoaxial probes made from strained semiconductor bilayers 有权
    微应力探针由应变半导体双层制成

    公开(公告)号：US20080061798A1

    公开(公告)日：2008-03-13

    申请号：US11519212

    申请日：2006-09-11

    Applicant: Robert H. Blick

    Inventor： Robert H. Blick

    IPC: G01N23/00 ,  G01B5/28 ,  H01L29/00

    CPC classification number: G01Q70/10 ,  G01N23/00 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/30 ,  G01Q70/14 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

    Abstract: The present invention provides microcoaxial probes fabricated from semiconductor heterostructures that include strained semiconductor bilayers. The microcoaxial probes are well suited for use as scanning probes in scanning probe microscopy, including scanning tunneling microscopy (STM), atomic force microscopy (AFM), scanning microwave microscopy, or a combination thereof.

    Abstract translation: 本发明提供由包括应变半导体双层的半导体异质结构制造的微轴向探针。 微扫描探针非常适合用作扫描探针显微镜中的扫描探针，包括扫描隧道显微镜（STM），原子力显微镜（AFM），扫描微波显微镜或其组合。

    Scanning probe characterization of surfaces
    2.
    发明申请
    Scanning probe characterization of surfaces 有权
    扫描探针表面表征

    公开(公告)号：US20060225164A1

    公开(公告)日：2006-10-05

    申请号：US11375867

    申请日：2006-03-15

    Applicant: Clayton Williams ,  Ezra Bussmann

    Inventor： Clayton Williams ,  Ezra Bussmann

    IPC: G01N23/00

    CPC classification number: G01Q60/04 ,  G01Q60/12 ,  G01Q60/40 ,  Y10S977/849 ,  Y10S977/852 ,  Y10S977/854 ,  Y10S977/86 ,  Y10S977/861 ,  Y10S977/862 ,  Y10S977/863 ,  Y10S977/864

    Abstract: Characterizing dielectric surfaces by detecting electron tunneling. An apparatus includes an atomic force probe. A mechanical actuator is connected to the atomic force probe. A mechanical modulator is connected to the mechanical actuator. The mechanical modulator modulates the mechanical actuator and the atomic force probe at the resonant frequency of the atomic force probe. An electrical modulator is connected to the atomic force probe. A feedback sensing circuit is connected to the mechanical modulator to detect movement of the atomic force probe and provide information about the movement of the atomic force probe to the mechanical modulator allowing the mechanical modulator to modulate the atomic force probe at the resonant frequency of the atomic force probe as the resonant frequency of the atomic force probe changes. An FM detector is connected to the feedback circuit detects changes in the resonant frequency of the atomic force probe.

    Abstract translation: 通过检测电子隧道来表征电介质表面。 一种装置包括原子力探针。 机械致动器连接到原子力探针。 机械调节器连接到机械致动器。 机械调制器将机械致动器和原子力探针以原子力探针的共振频率进行调制。 电调制器连接到原子力探针。 反馈感测电路连接到机械调制器以检测原子力探针的移动，并提供关于原子力探针到机械调制器的运动的信息，允许机械调制器以原子的共振频率调制原子力探针 力探头作为原子力探头的共振频率发生变化。 FM检测器连接到反馈电路，检测原子力探头的谐振频率的变化。

    Method for identifying biochemical and chemical reactions and micromechanical processes using nanomechanical and electronic signal identification
    5.
    发明授权
    Method for identifying biochemical and chemical reactions and micromechanical processes using nanomechanical and electronic signal identification 失效
    使用纳米机电和电子信号识别识别生物化学和化学反应和微机械过程的方法

    公开(公告)号：US5620854A

    公开(公告)日：1997-04-15

    申请号：US402800

    申请日：1995-03-13

    Applicant: John F. Holzrichter ,  Wigbert J. Siekhaus

    Inventor： John F. Holzrichter ,  Wigbert J. Siekhaus

    IPC: C12P19/34 ,  C12Q1/68 ,  G01Q20/00 ,  G01Q60/04 ,  G01Q60/18 ,  G01Q60/24 ,  G01Q60/42 ,  G01N21/00 ,  G01N33/53

    CPC classification number: G01Q60/42 ,  B82Y35/00 ,  C12Q1/6869 ,  G01Q60/04 ,  Y10S977/853

    Abstract: A scanning probe microscope, such as an atomic force microscope (AFM) or a scanning tunneling microscope (STM), is operated in a stationary mode on a site where an activity of interest occurs to measure and identify characteristic time-varying micromotions caused by biological, chemical, mechanical, electrical, optical, or physical processes. The tip and cantilever assembly of an AFM is used as a micromechanical detector of characteristic micromotions transmitted either directly by a site of interest or indirectly through the surrounding medium. Alternatively, the exponential dependence of the tunneling current on the size of the gap in the STM is used to detect micromechanical movement. The stationary mode of operation can be used to observe dynamic biological processes in real time and in a natural environment, such as polymerase processing of DNA for determining the sequence of a DNA molecule.

    Abstract translation: 诸如原子力显微镜（AFM）或扫描隧道显微镜（STM）的扫描探针显微镜在静息模式下在感兴趣的活动位置进行操作，以测量和识别由生物引起的特征性时变微型 ，化学，机械，电气，光学或物理过程。 AFM的尖端和悬臂组件被用作直接由感兴趣的位置或间接地通过周围介质传输的特征微观测量的微机械探测器。 或者，隧道电流对STM中间隙大小的指数依赖性用于检测微机械运动。 固定操作模式可以用于实时和自然环境中观察动态生物过程，例如用于确定DNA分子序列的DNA的聚合酶处理。

    Micromechanical sensor fabrication process
    6.
    发明授权
    Micromechanical sensor fabrication process 失效
    微机械传感器制造工艺

    公开(公告)号：US5282924A

    公开(公告)日：1994-02-01

    申请号：US034639

    申请日：1993-03-22

    Applicant: Thomas Bayer ,  Johann Greschner

    Inventor： Thomas Bayer ,  Johann Greschner

    IPC: G01Q70/10 ,  B44C1/22 ,  B81C1/00 ,  C03C15/00 ,  C23F4/00 ,  G01B7/34 ,  G01B21/30 ,  G01Q60/04 ,  G01Q60/08 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/16 ,  H01J9/14 ,  H01J37/00 ,  H01J37/28 ,  H01L21/306 ,  C03C25/06

    CPC classification number: G01Q60/38 ,  B82Y35/00 ,  G01Q60/04 ,  G01Q60/08 ,  G01Q60/16 ,  Y10S977/878

    Abstract: A method for producing micromechanical sensors for the AFM/STM/MFM profilometry is described in which a multiple step mask of cantilever beam and tip is transferred step by step into the wafer substrate by reactive ion etching. A particular highly anisotropic etching step is used for etching and shaping of the tip. This process step uses an Ar/C12 ambient at a pressure of about 100 .sup.6 bar and a self bias voltage of about 300 V DC. The ratio of pressure to self bias voltage determines the concave shape of the tip side-walls. This etching step is followed by a thermal oxidation step. The oxidation is carried out for a time until the oxidation fronts at the thinnest point of the tip shaft touch each other. A stripping process with buffered hydrofluoric acid gently removes the thermally grown oxide. The oxidation process allows--via oxidation time--a modification of tip height and angle in an extremely controllable manner. To prevent sticking of the tip to the structure to be profiled the ratio of tip diameter to tip height should be about 1:10. Should this ratio be exceeded the tip has to be arranged on a pedestal. The structure, comprising a cantilever beam and a tip on pedestal, can be produced with the same but slightly modified process of the invention.

    Abstract translation: 描述了用于AFM / STM / MFM轮廓测量法的微机械传感器的制造方法，其中悬臂梁和尖端的多步骤掩模通过反应离子蚀刻逐步转移到晶片衬底中。 特别是高度各向异性的蚀刻步骤用于尖端的蚀刻和成型。 该工艺步骤在约100 6bar的压力和约300V DC的自偏压下使用Ar / C12环境。 压力与自偏压的比率决定了顶端侧壁的凹形。 该蚀刻步骤之后是热氧化步骤。 氧化进行一段时间，直到尖端轴的最薄点处的氧化前沿相互接触。 用缓冲氢氟酸的汽提过程轻轻地除去热生长的氧化物。 氧化过程允许通过氧化时间 - 以极其可控的方式改变尖端高度和角度。 为了防止尖端粘附到待成型的结构上，尖端直径与尖端高度的比率应为约1:10。 如果超过该比率，则必须将尖端布置在基座上。 包括悬臂梁和基座上的尖端的结构可以用本发明的相同但略微改进的方法制造。

    Method of producing ultrafine silicon tips for the AFM/STM profilometry
    7.
    发明授权
    Method of producing ultrafine silicon tips for the AFM/STM profilometry 失效
    生产AFM / STM型材超导硅胶的方法

    公开(公告)号：US5242541A

    公开(公告)日：1993-09-07

    申请号：US568451

    申请日：1990-08-16

    Applicant: Thomas Bayer ,  Johann Greschner ,  Yves Martin ,  Helga Weiss ,  Hemantha K. Wickramasinghe ,  Olaf Wolter

    Inventor： Thomas Bayer ,  Johann Greschner ,  Yves Martin ,  Helga Weiss ,  Hemantha K. Wickramasinghe ,  Olaf Wolter

    IPC: G01B7/34 ,  G01B21/30 ,  G01N27/00 ,  G01Q10/04 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  H01J37/28 ,  H01L21/00 ,  H01L21/66

    CPC classification number: G01Q60/38 ,  B82Y35/00 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q70/10 ,  Y10S977/878

    Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising:1. providing a silicon substrate and applying a silicon dioxide layer thereto;2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching;3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate;4. thinning the shaft and forming a base by isotropic wet etching; and5. removing the mask by etching.The resulting tip shaft with a rectangular end may be pointed by argon ion milling.In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.

    Abstract translation: 描述了一种用于生产用于AFM / STM轮廓测量法的超细硅尖端的方法，包括：1.提供硅衬底并向其施加二氧化硅层; 2.通过光刻和湿法或干蚀刻在所述二氧化硅层中产生掩模; 3.通过将在步骤2中产生的掩模图案通过反应离子蚀刻转移到硅衬底中来生产尖端轴; 4.通过各向同性湿法蚀刻使轴变薄并形成基座; 和5.通过蚀刻去除掩模。 所产生的具有矩形端部的尖端轴可以通过氩离子铣削来尖。 在第二实施例中，在步骤5之前，通过完整的二氧化硅掩模存在各向异性湿法蚀刻步骤，从而产生正好在掩模下面的轴的负轮廓。 在该蚀刻步骤之后，通过蚀刻除去掩模。

    Sensor for noncontact profiling of a surface
    10.
    发明授权
    Sensor for noncontact profiling of a surface 有权
    用于表面非接触式分析的传感器

    公开(公告)号：US08393009B2

    公开(公告)日：2013-03-05

    申请号：US13300749

    申请日：2011-11-21

    Applicant: Franz Josef Giessibl

    Inventor： Franz Josef Giessibl

    IPC: G01B13/16 ,  G01Q70/08 ,  G01Q60/24

    CPC classification number: G01Q60/04

    Abstract: A sensor for scanning a surface with an oscillating cantilever (12), made from piezoelectric material that is suitable for a transverse oscillation of the free end of a beam, holding an electrically conductive probe tip (14) on the free end of the beam in transverse direction, a first deflection electrode (26A, 26B) and an inversely phased second electrode (28A, 28B, 28C) being provided to collect charges that are separated within the space of the deflection electrodes (34, 36). The cantilever (12) is provided with at least one electrode (30) in addition to the deflection electrodes (26A, 26B, 28A, 28B, 28C) that provides electrical contact to the tip (14), the at least one additional electrode being located in a region on the deflecting beam where the surface charge density due to the strain caused by beam deflection (34, 36) is smaller than in the region where the deflection electrodes are located.

    Abstract translation: 一种用于利用由压电材料制成的振荡悬臂（12）扫描表面的传感器，该压电材料适用于梁的自由端的横向振荡，将导电探针尖端（14）保持在梁的自由端上 提供横向，第一偏转电极（26A，26B）和反相第二电极（28A，28B，28​​C），以收集在偏转电极（34,36）的空间内分离的电荷。 除了提供与尖端（14）电接触的偏转电极（26A，26B，28A，28B，28​​C）之外，悬臂（12）还设置有至少一个电极（30），所述至少一个附加电极 位于偏转光束上的由于由光束偏转（34,36）引起的应变引起的表面电荷密度小于偏转电极所在的区域的区域中。

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