Abstract:
In order to meet the needs of the semi-conductor industry as it requires finer lithography nodes, a method of feedback control for scanning probe microscopy generates a microwave frequency comb of harmonics in a tunneling junction by irradiating the junction with mode-locked pulses of electromagnetic radiation. Utilizing power measurements within one or more harmonics, the tip-sample distance in the tunneling junction may be regulated for maximum efficiency and avoid tip crash when used with resistive samples. Optionally, no DC bias is required to use the method. Utilization of this method contributes to true sub-nanometer resolution of images of carrier distribution in resistive samples such as semi-conductors.
Abstract:
Techniques, methods, devices, and compositions are disclosed that are useful in identifying and sequencing natural and synthetic, and modified and unmodified DNA, RNA, PNA, DNA/RNA nucleotides. The disclosed techniques, methods, devices, and compositions are useful in identifying various modifications, DNA/RNA damage, and nucleotide structure, using nanoelectronic quantum tunneling spectroscopy, which may be referred to as QM-Seq. The methods and compositions can include the use of a charged, smooth substrate for deposition of single stranded nucleotides and polynucleotide macromolecules, scanning the modified or unmodified DNA/RNA/PNA, comparing the electronic signatures of an unknown nucleobase against a database of electronic fmgerprints of known nucleobases, including natural and synthetic, modified and unmodified nucleobases, and secondary/tertiary structure, obtained under the same or similar conditions, for example where the nucleobase is in an acidic environment.
Abstract:
A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.
Abstract:
Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, caused by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described.
Abstract:
In a preferred embodiment, an exploring needle of a probe 2 is located at the position of each base of a nucleic acid 6, and a tunneling current value is set to a given value measure. When a bias voltage applied to a substrate is changed step by step from −6 V to 4 V, according to the height of an observed image of each base, the electronic state distribution pattern of each base is obtained. The thus obtained electronic state distribution pattern of each base in the nucleic acid as a measurement object is checked against those in a database to find a base species having the highest degree of similarity to each base by pattern matching to identify each base species to determine the base sequence of the nucleic acid.
Abstract:
Disclosed is a measuring apparatus for a physical phenomenon by photoexcitation, in particular a delay time modulated and time-resolved, scanning probe microscope apparatus providing an ultimate resolution both temporal and spatial. The apparatus comprises an ultrashort laser pulse generator (2); a delay time modulating circuit (6) which splits an ultrashort laser pulse (3) produced by the ultrashort laser pulse generator (2) into two and which also modulates a delay time td between the two ultrashort laser pulses (4 and 5) with a frequency (ω); a scanning probe microscope (17); and a lock-in detection unit (8) which performs lock-in detection with the delay time modulation frequency (ω) of a probe signal (11) from the scanning probe microscope (17). It can detect the delay time dependency of the probe signal (11) as its differential coefficient to the delay time, with no substantial influence from fluctuations in the intensity of ultrashort laser pulses (3) while preventing the probe apex (19) from thermal expansion and shrinkage by repeated irradiation with ultrashort laser pulses (3). A photoexcited physical phenomenon dependent on a delay time between ultrashort laser pulses can thus be measured at a temporal resolution in the order of femtoseconds and at a spatial resolution in the order of angstroms.
Abstract:
A scanning tunneling microscope, in which the gap between a tip having a keenly sharpened end and a sample is narrowed to let flow a tunneling current between them and thereby allow observation of the surface of the sample, a strain wave detecting device is disposed on the sample or in the vicinity of the sample to detect strain waves generated within the sample. By modulating the value of the above described tunneling current, strain waves are generated within the sample. The strain waves are detected by the above described strain wave detecting device. On the basis of the amplitude information and phase information of detected strain waves, physical information regarding the inside of the sample is obtained.
Abstract:
A scanning tunneling potentio-spectroscopic microscope, includes a conductive probe and a circuit for selectively applying one of first, second and third bias voltages to a sample. A tunnel current flowing between the probe and sample is detected, and a tunnel current signal is produced upon detection thereof. A servo circuit controls a distance between the probe and sample on the basis of the tunnel current signal by producing a servo signal as a feedback signal. A hold circuit switches the servo circuit between operating and non-operating states. Configuration data on a surface of the sample is obtained, on the basis of the servo signal, with the first bias voltage applied to the sample and with the servo circuit in the operating state. A first dependence of the tunnel current on the bias voltage is obtained, from the tunnel current signal and the second bias voltage, with the second bias voltage applied to the sample and with the servo circuit in the non-operating state. A second dependence of the tunnel current on the bias voltage is obtained from the tunnel current signal and the third bias voltage, with the third bias voltage applied to the sample and with the servo circuit in the non-operating state. Electron state data is obtained on the basis of the first dependence, and potential data is obtained on the basis of the first and second dependencies.
Abstract:
A scanning probe microscope comprises a cantilever having a conductive probe positioned near a sample, an actuator for moving the sample to and away from the probe, a circuit for applying a bias voltage between the probe and sample to produce a tunnel current therebetween, a circuit for detecting the produced tunnel current, a circuit for detecting the amount of displacement of the probe resultant from interatomic forces acting between atomics of the probe and sample, thereby producing signals, a circuit for providing the actuator for feedback in response to the output signals from the circuit to retain constant the distance between the probe and sample, thereby causing the actuator to move the sample, a circuit for forming an STS image data from the detected tunnel current, a circuit for forming an STM image data from the detected tunnel current, and a circuit for forming an AFM image data. Thus, the STS, STP and AFM images are separately obtained simultaneously.
Abstract:
A semiconductor carrier profiling method utilizes a scanning tunneling microscope and shielded probe with an attached spectrum analyzer to measure power loss of a microwave frequency comb generated in a tunneling junction. From this power loss and by utilizing an equivalent circuit or other model, spreading resistance may be determined and carrier density from the spreading resistance. The methodology is non-destructive of the sample and allows scanning across the surface of the sample. By not being destructive, additional analysis methods, like deconvolution, are available for use.