摘要:
A microwave frequency comb (MFC) is produced when a mode-locked ultrafast laser is focused on the tunneling junction of a scanning tunneling microscope (STM). The MFC consists of hundreds of measureable harmonics at integer multiples of the pulse repetition frequency of the laser, which are superimposed on the DC tunneling current. In Scanning Frequency Comb Microscopy (SFCM) the tip and/or sample electrode of the STM is moved vertically and laterally so that the power in the MFC may be measured at one or more locations on the surface of the sample and, from the power, carrier density, and other characteristics, of the sample may be calculated. SFCM is non-destructive of the sample. While many systems are possible to practice SFCM, a preferred apparatus is disclosed.
摘要:
A method and system for performing simultaneous topographic and elemental chemical and magnetic contrast analysis in a scanning, tunneling microscope. The method and system also includes nanofabricated coaxial multilayer tips with a nanoscale conducting apex and a programmable in-situ nanomanipulator to fabricate these tips and also to rotate tips controllably.
摘要:
An apparatus for measuring physical properties of micro area which has an object to measure physical properties from a micro area on an atomic scale on the surface of a test sample such as electron spin, nuclear magnetic moment, and nuclear quadrupole moment in high sensitivity, allows the probe 2 of the atomic force microscope to approach the surface of the test sample 1, applies a magnetic field to the test sample 1 by the magnetic field generation coil 27 and the magnetic paths 22 to 26 and furthermore a high frequency electromagnetic field to the test sample 1 by the coils 16 and 17 respectively, and detects a signal from atoms existing on the surface of the test sample 1 which are resonant with the high frequency electromagnetic field by the probe 2.
摘要:
A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion.
摘要:
A signal coupling system interposed between a scanning probe and a measurement instrument provides signal communication between the scanning probe and the measurement instrument. The signal coupling system has a pre-stressed shape when the scanning probe is in a neutral position. The pre-stressed shape is designated to provide a characteristic impedance of the signal coupling system that varies linearly as a function of displacement of the scanning probe from the neutral position when the scanning probe is displaced, relative to the neutral position, over a designated range of displacements.
摘要:
A signal coupling system interposed between a scanning probe and a measurement instrument provides signal communication between the scanning probe and the measurement instrument. The signal coupling system has a pre-stressed shape when the scanning probe is in a neutral position. The pre-stressed shape is designated to provide a characteristic impedance of the signal coupling system that varies linearly as a function of displacement of the scanning probe from the neutral position when the scanning probe is displaced, relative to the neutral position, over a designated range of displacements.
摘要:
An electrical property evaluation apparatus for measuring an electrical property of an object to be measured, including: a magnetic field generating mechanism for generating a magnetic field in a target area on the object; a magnetic sensor for measuring the magnetic field near the target area; a contact having a conducting probe, the contact supported so that the probe can be brought into contact with the target area; a voltage source for applying a voltage to the probe; and an electrical property measuring section for measuring a current or an electrical resistance between the probe and the object in contact with each other.
摘要:
A bias voltage U.sub.B including a sine-wave voltage U.sub.T sin.omega. .sub.o t and an off-set voltage U.sub.REG is applied to an electrode on a sample. A potential U.sub.1 of the electrode is represented by: U.sub.1 =U.sub.REG +U.sub.T sin.omega. .sub.o t. A voltage including the bias voltage U.sub.B and a voltage .DELTA.U is applied to an electrode on the sample. A probe is approached to the sample by several nm, and a tunnel current I.sub.T flows therebetween. And the probe scans the surface of the sample. During the scan, the position of the probe is servo-controlled in the z-direction, to make constant the average absolute value of the tunnel current. The servo voltage is recorded thereby obtaining an STM image. Given that the potential difference between the electrode and a surface portion facing the probe is U.sub.S (x), the average of U.sub.1 +U.sub.S (x) becomes zero when the average of the tunnel current I.sub.T is zero. Accordingly, =0, that is, U.sub.S (x)=-U.sub.REG. Thus, by recording-U.sub.REG the potential distribution U.sub.S (x) on the sample surface is determined. Spectroscopic data is obtained by an analog operation unit, on the basis of a differential conductance .differential.I.sub.T /.differential.U.sub.T calculated from the tunnel current signal I.sub.T and the bias voltage U.sub.T.
摘要:
The superimposition of a periodic potential wave to the tip movement control or the bias supply of an STM, in which a microwave frequency comb is generated in its tunneling junction, may be used to reduce or eliminate artifacts or other noise generated from outside the tunneling junction.
摘要:
A computer-aided simulation method for an atomic-resolution scanning Seebeck microscope (SSM) image is provided. In the computer-aided simulation method, a computer may calculate a local thermoelectric voltage for a position of a voltage probe, to acquire an SSM image corresponding to the position, using the following equation: V ( r ) = V diff + S coh ( r ) ∫ ∇ T ( r ; r ′ ) · r ′ - r r ′ - r 3 3 r ′ in which V(r) denotes the local thermoelectric voltage, Vdiff denotes a thermoelectric voltage drop in a diffusive transport region in a tip and a sample, Scoh(r) denotes a position-dependent Seebeck coefficient, r denotes a distance measured from a point voltage probe, r′ denotes material internal coordinates, ∇T(r;r′) denotes a temperature gradient radially weighted by a factor of 1/r2, and ∫ ∇ T ( r ; r ′ ) · r ′ - r r ′ - r 3 3 r ′ denotes a volume integral of a temperature profile.
摘要翻译:提供了原子分辨率扫描塞贝克显微镜(SSM)图像的计算机辅助仿真方法。 在计算机辅助模拟方法中,计算机可以计算电压探针位置的局部热电压,以使用以下等式来获取对应于该位置的SSM图像:V(r)= V diff + S coh 其中V(r)表示局部热电电压,Vdiff表示热电电压(r),r(r),r' Scoh(r)表示与位置相关的塞贝克系数,r表示从点电压探头测得的距离,r'表示材料内部坐标,∇T(r; r' )表示以因子1 / r2径向加权的温度梯度,并且∫∇T(r; r')·r'-rr'-r叁3r'表示a 温度曲线。