摘要:
A semiconductor wafer in which a plurality of regions, designed to become semiconductor chips are provided in a matrix array with interposition of a dicing line(s) respectively separating the regions. The semiconductor wafer comprises: a plurality of test pads provided in an area(s) of the semiconductor wafer disposed between the semiconductor chips, inclusive of the dicing line(s); an inter-test pad interconnect(s) provided in parallel with the test pads in the area(s) of the semiconductor wafer disposed between the regions to become semiconductor chips; the inter-test pad interconnect(s) being connected to the test pads; and an inter-chip interconnect that interconnects at least two of the regions designed to become semiconductor chips; the inter-test pad interconnect being electrically connected to the inter-chip interconnect.
摘要翻译:设置成成为半导体芯片的多个区域的半导体晶片以分别分开该区域的切割线插入矩阵阵列中。 半导体晶片包括:多个测试焊盘,设置在设置在半导体芯片之间的半导体晶片的区域中,包括切割线; 与设置在所述半导体芯片之间的半导体晶片的区域中的测试焊盘平行设置的测试间互连(inter-test pad interconnect); 所述测试间互连连接到所述测试焊盘; 以及将设计成半导体芯片的区域中的至少两个互连的芯片间互连; 所述测试间互连件电连接到所述芯片间互连。
摘要:
A wiring board (20) includes a first wiring portion (10) having a plurality of wiring layers (1) and a plurality of external connecting bumps (5), and a second wiring portion (15) integrated with the first wiring portion in the direction of thickness. The thermal expansion coefficient of the second wiring portion is made smaller than that of the first wiring portion, and equal to that of a semiconductor chip (30) to be mounted on the wiring board. This suppresses the internal stress resulting from the thermal expansion coefficient difference between the semiconductor chip and wiring board, and increases the reliability of a semiconductor device (50) obtained by mounting the semiconductor chip on the wiring board. The sizes of the opposing surfaces of the first and second wiring portions are also made equal. This requires only one second wiring portion to be formed even when improving the performance of the semiconductor device by mounting a plurality of semiconductor chips on the wiring board, thereby improving the performance at a low cost.
摘要:
A system semiconductor device includes a system LSI cell portion and a global wiring layer. The system LSI cell portion has a plurality of functional blocks for realizing specific functions on a semiconductor chip. The global wiring layer has a wiring layer on a semiconductor substrate. The system LSI cell portion is laminated with the global wiring layer.
摘要:
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
摘要:
A system semiconductor device includes a system LSI cell portion and a global wiring layer. The system LSI cell portion has a plurality of functional blocks for realizing specific functions on a semiconductor chip. The global wiring layer has a wiring layer on a semiconductor substrate. The system LSI cell portion is laminated with the global wiring layer.
摘要:
A semiconductor device includes a semiconductor chip. A substrate is arranged in opposition to the semiconductor chip. A first electrode is placed on the semiconductor chip while a second electrode is placed on the substrate. Each of the first and second electrodes is made of the same electrode material. An intermetallic compound layer is formed between the first electrode and the second electrode. The intermetallic compound layer is entirely a binary alloy of the electrode material and a bonding material that was applied to at least one of the first and second electrodes.
摘要:
The present invention provides a semiconductor chip having a bonding face to be mounted onto a mother board, wherein a low elastic modulus resin layer is provided in contact directly with the bonding face of the semiconductor chip without intervening any interposer to form a chip size package, and the low elastic modulus resin layer has at least a conductive pattern of a build-up type, and wherein the low elastic modulus resin layer has both a sufficiently low elastic modulus and a sufficiently large thickness for allowing realization of a stress caused due to a difference in thermal expansion coefficient between the semiconductor chip and the mother board.
摘要:
A semiconductor inspecting device comprises a probe card for transmitting a signal or power supply to semiconductor wafers having one or more subject chips formed therein, and is constituted such that the first semiconductor wafer faces the first face of the probe card and such that the second semiconductor wafer faces the second face of the probe card on the opposite side of the first face. The probe card includes one or more inspecting chips, which can perform non-contact transmissions with the first subject chip in the first semiconductor wafer and the second subject chip in the second semiconductor wafer.
摘要:
There is provided a semiconductor device and a manufacturing method therefor, the semiconductor device requiring flip-chip mounting of a fine pitch electrode, wherein the fine electrode is easily manufactured, resin sealing is not required, and reliability can be improved. In the semiconductor device, one or more LSI chips (1), having an insulating layer (3) surface and an electrode (2) surface on one side, and a substrate (4), having an insulating layer (6) surface and an electrode (5) surface on one side, are bonded by having surfaces of the electrodes and surfaces of the insulating layers face each other via a bonding layer (7) made in a thin film form, in a region excluding the surfaces of the electrodes (2, 5) and the surfaces of the insulating layers (3, 6) in areas surrounding the electrodes.
摘要:
A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.