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公开(公告)号：US10897007B2
公开(公告)日：2021-01-19
申请号：US16697276
申请日：2019-11-27
发明人： Soichi Oikawa , Yushi Kato , Hiroaki Yoda
摘要： According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.
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公开(公告)号：US10340442B2
公开(公告)日：2019-07-02
申请号：US15445608
申请日：2017-02-28
发明人： Naoki Hase , Takao Ochiai , Tadaomi Daibou , Yushi Kato , Shumpei Omine , Junichi Ito
摘要： A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
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公开(公告)号：US10109332B2
公开(公告)日：2018-10-23
申请号：US15704672
申请日：2017-09-14
发明人： Mariko Shimizu , Yuichi Ohsawa , Hideyuki Sugiyama , Satoshi Shirotori , Altansargai Buyandalai , Yushi Kato
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.
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公开(公告)号：US10580472B2
公开(公告)日：2020-03-03
申请号：US16196663
申请日：2018-11-20
发明人： Yuichi Ohsawa , Hiroaki Yoda , Altansargai Buyandalai , Satoshi Shirotori , Mariko Shimizu , Hideyuki Sugiyama , Yushi Kato
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
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公开(公告)号：US20200020374A1
公开(公告)日：2020-01-16
申请号：US16273387
申请日：2019-02-12
发明人： Hiroaki YODA , Satoshi Takaya , Yuichi Ohsawa , Naoharu Shimomura , Katsuhiko Koui , Yushi Kato , Shinobu Fujita
摘要： According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.
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公开(公告)号：US10360960B2
公开(公告)日：2019-07-23
申请号：US15700485
申请日：2017-09-11
发明人： Yushi Kato , Soichi Oikawa , Mizue Ishikawa , Yoshiaki Saito , Hiroaki Yoda
IPC分类号： G11C11/15 , G11C11/16 , H01L43/04 , H01L43/10 , H01L43/14 , G11C11/56 , H01L43/08 , G11C11/155 , H01L27/22
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US10262711B2
公开(公告)日：2019-04-16
申请号：US15691991
申请日：2017-08-31
发明人： Mizue Ishikawa , Yushi Kato , Yoshiaki Saito , Soichi Oikawa , Hiroaki Yoda
摘要： A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.
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公开(公告)号：US20180268888A1
公开(公告)日：2018-09-20
申请号：US15704571
申请日：2017-09-14
发明人： Yuichi OHSAWA , Hiroaki Yoda , Altansargai Buyandalai , Satoshi Shirotori , Mariko Shimizu , Hideyuki Sugiyama , Yushi Kato
CPC分类号： G11C11/165 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
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公开(公告)号：US20180145247A1
公开(公告)日：2018-05-24
申请号：US15875549
申请日：2018-01-19
发明人： Yoshiaki SAITO , Hiroaki Yoda , Yushi Kato , Mizue Ishikawa , Soichi Oikawa
CPC分类号： H01L43/02 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.
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公开(公告)号：US20180040807A1
公开(公告)日：2018-02-08
申请号：US15445475
申请日：2017-02-28
发明人： Yoshiaki SAITO , Hiroaki Yoda , Yushi Kato , Mizue Ishikawa , Soichi Oikawa
CPC分类号： H01L43/02 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.
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