公开(公告)号：US10340442B2

公开(公告)日：2019-07-02

申请号：US15445608

申请日：2017-02-28

Applicant: Kabushiki Kaisha Toshiba

Inventor： Naoki Hase ,  Takao Ochiai ,  Tadaomi Daibou ,  Yushi Kato ,  Shumpei Omine ,  Junichi Ito

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

公开(公告)号：US10256394B2

公开(公告)日：2019-04-09

申请号：US15444811

申请日：2017-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shumpei Omine ,  Tadaomi Daibou ,  Yushi Kato ,  Naoki Hase ,  Junichi Ito

IPC: H01L29/82 ,  H01L43/02 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L27/105 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.

公开(公告)号：US09859491B2

公开(公告)日：2018-01-02

申请号：US15259855

申请日：2016-09-08

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi Daibou ,  Yushi Kato ,  Shumpei Omine ,  Naoki Hase ,  Junichi Ito

IPC: H01L43/10 ,  H01L43/08 ,  G11B5/39 ,  G01R33/09 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.

公开(公告)号：US09991314B2

公开(公告)日：2018-06-05

申请号：US15262117

申请日：2016-09-12

Applicant: Kabushiki Kaisha Toshiba

Inventor： Naoki Hase ,  Tadaomi Daibou ,  Yushi Kato ,  Shumpei Omine ,  Junichi Ito

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L27/105 ,  H01L29/82 ,  G11C11/16 ,  H01L43/12 ,  H01F10/12 ,  H01F10/32

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/105 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0

公开(公告)号：US09793469B2

公开(公告)日：2017-10-17

申请号：US15259408

申请日：2016-09-08

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yushi Kato ,  Tadaomi Daibou ,  Yuichi Ohsawa ,  Shumpei Omine ,  Naoki Hase

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.

公开(公告)号：US20160380029A1

公开(公告)日：2016-12-29

申请号：US15262117

申请日：2016-09-12

Applicant: Kabushiki Kaisha Toshiba

Inventor： Naoki HASE ,  Tadaomi Daibou ,  Yushi Kato ,  Shumpei Omine ,  Junichi Ito

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/105 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0

Abstract translation: 根据实施例的磁阻元件包括：第一磁性层; 第二磁性层; 以及设置在第一磁性层和第二磁性层之间的第一非磁性层，第二磁性层包含具有组成（1R1-xhRx）z（TM1-yZy）1-z（0