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公开(公告)号：US20190088860A1
公开(公告)日：2019-03-21
申请号：US15913377
申请日：2018-03-06
发明人： Yoshiaki Saito , Tomoaki Inokuchi , Yushi Kato , Soichi Oikawa , Mizue Ishikawa , Hiroaki Yoda
摘要： A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.
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公开(公告)号：US08847288B2
公开(公告)日：2014-09-30
申请号：US13749982
申请日：2013-01-25
CPC分类号： H01L29/82 , G11C11/161 , G11C11/1675 , H01L29/66984
摘要： A spin transistor according to an embodiment includes: a semiconductor layer including a p+-region and an n+-region located at a distance from each other, and an i-region located between the p+-region and the n+-region; a first electrode located on the p+-region, the first electrode including a first ferromagnetic layer; a second electrode located on the n+-region, the second electrode including a second ferromagnetic layer; and a gate located on at least the i-region.
摘要翻译： 根据实施例的自旋晶体管包括：包括彼此相距一定距离的p +区和n +区的半导体层和位于p +区和n +区之间的i区; 位于所述p +区上的第一电极，所述第一电极包括第一铁磁层; 位于所述n +区域上的第二电极，所述第二电极包括第二铁磁层; 以及至少位于i区域的门。
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公开(公告)号：US10453513B2
公开(公告)日：2019-10-22
申请号：US15918000
申请日：2018-03-12
发明人： Yushi Kato , Yoshiaki Saito , Mizue Ishikawa , Soichi Oikawa , Hiroaki Yoda
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
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公开(公告)号：US10374150B2
公开(公告)日：2019-08-06
申请号：US15905271
申请日：2018-02-26
发明人： Yushi Kato , Yoshiaki Saito , Soichi Oikawa , Mizue Ishikawa , Hiroaki Yoda
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US10283697B2
公开(公告)日：2019-05-07
申请号：US15266598
申请日：2016-09-15
摘要： A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.
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公开(公告)号：US20180366639A1
公开(公告)日：2018-12-20
申请号：US15905271
申请日：2018-02-26
发明人： Yushi Kato , Yoshiaki Saito , Soichi Oikawa , Mizue Ishikawa , Hiroaki Yoda
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US20160196861A1
公开(公告)日：2016-07-07
申请号：US15067586
申请日：2016-03-11
IPC分类号： G11C11/16
CPC分类号： G11C11/165 , G11C11/161 , G11C11/1675 , G11C2013/0071 , H01L27/228 , H01L43/08 , H03K19/16
摘要： A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.
摘要翻译： 磁存储器包括磁阻器件和负载电阻单元。 磁阻器件具有第一电阻状态和第二电阻状态，并且包括第一铁磁层和第二铁磁层。 负载电阻单元电连接到磁阻器件。 负载电阻单元处于第一状态和第二状态。 负载电阻单元在第二状态下的差分电阻低于负载电阻单元在第一状态下的差分电阻。
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公开(公告)号：US20130248941A1
公开(公告)日：2013-09-26
申请号：US13749982
申请日：2013-01-25
IPC分类号： H01L29/82
CPC分类号： H01L29/82 , G11C11/161 , G11C11/1675 , H01L29/66984
摘要： A spin transistor according to an embodiment includes: a semiconductor layer including a p+-region and an n+-region located at a distance from each other, and an i-region located between the p+-region and the n+-region; a first electrode located on the p+-region, the first electrode including a first ferromagnetic layer; a second electrode located on the n+-region, the second electrode including a second ferromagnetic layer; and a gate located on at least the i-region.
摘要翻译： 根据实施例的自旋晶体管包括：包括彼此相距一定距离的p +区和n +区的半导体层和位于p +区和n +区之间的i区; 位于所述p +区上的第一电极，所述第一电极包括第一铁磁层; 位于所述n +区域上的第二电极，所述第二电极包括第二铁磁层; 以及至少位于i区域的门。
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公开(公告)号：US10360960B2
公开(公告)日：2019-07-23
申请号：US15700485
申请日：2017-09-11
发明人： Yushi Kato , Soichi Oikawa , Mizue Ishikawa , Yoshiaki Saito , Hiroaki Yoda
IPC分类号： G11C11/15 , G11C11/16 , H01L43/04 , H01L43/10 , H01L43/14 , G11C11/56 , H01L43/08 , G11C11/155 , H01L27/22
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US10262711B2
公开(公告)日：2019-04-16
申请号：US15691991
申请日：2017-08-31
发明人： Mizue Ishikawa , Yushi Kato , Yoshiaki Saito , Soichi Oikawa , Hiroaki Yoda
摘要： A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.
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