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公开(公告)号：US20190280189A1
公开(公告)日：2019-09-12
申请号：US16423805
申请日：2019-05-28
发明人： Altansargai BUYANDALAI , Satoshi SHIROTORI , Yuichi OHSAWA , Hideyuki SUGIYAMA , Mariko SHIMIZU , Hiroaki YODA , Tomoaki INOKUCHI
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US20180040812A1
公开(公告)日：2018-02-08
申请号：US15448892
申请日：2017-03-03
发明人： Mariko SHIMIZU , Yuichi OHSAWA , Hiroaki YODA , Hideyuki SUGIYAMA , Satoshi SHIROTORI , Altansargai BUYANDALAI
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/12
摘要： According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.
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公开(公告)号：US20160276007A1
公开(公告)日：2016-09-22
申请号：US15063808
申请日：2016-03-08
CPC分类号： G11C11/161 , G11C11/15 , G11C11/165 , H01L29/66984 , H03K19/18
摘要： A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.
摘要翻译： 根据实施例的自旋晶体管存储器包括：第一半导体区域，第二半导体区域和第三半导体区域，每个都是第一导电类型并且设置在半导体层中; 设置在所述第一半导体区域和所述第二半导体区域之间的所述半导体层上方的第一栅极; 设置在所述第二半导体区域和所述第三半导体区域之间的所述半导体层上方的第二栅极; 以及分别设置在第一半导体区域，第二半导体区域和第三半导体区域上的第一铁磁层，第二铁磁层和第三铁磁层。
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公开(公告)号：US20190088859A1
公开(公告)日：2019-03-21
申请号：US15905915
申请日：2018-02-27
发明人： Mariko SHIMIZU , Yuichi OHSAWA , Hideyuki SUGIYAMA , Satoshi SHIROTORI , Altansargai BUYANDALAI , Hiroaki YODA
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion in a first direction crossing a second direction being from the first portion toward the second portion. The second magnetic layer is provided between the first magnetic layer and at least a portion of the third portion. The first nonmagnetic layer includes first and second regions. The first region is provided between the first and second magnetic layers. The second region is continuous with the first region. The second region overlaps at least a portion of the second magnetic layer in the second direction. The controller is electrically connected to the first and second portions.
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公开(公告)号：US20180277746A1
公开(公告)日：2018-09-27
申请号：US15704867
申请日：2017-09-14
发明人： Keiko ABE , Kazutaka IKEGAMI , Shinobu FUJITA , Katsuhiko KOUI , Tomoaki INOKUCHI , Satoshi SHIROTORI , Yuichi OHSAWA , Hideyuki SUGIYAMA , Hiroaki YODA , Naoharu SHIMOMURA , Yuuzo KAMIGUCHI
CPC分类号： H01L43/02 , G11C11/161 , G11C11/165 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.
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公开(公告)号：US20180277185A1
公开(公告)日：2018-09-27
申请号：US15704672
申请日：2017-09-14
发明人： Mariko SHIMIZU , Yuichi OHSAWA , Hideyuki SUGIYAMA , Satoshi SHIROTORI , Altansargai BUYANDALAI , Yushi KATO
CPC分类号： G11C11/165 , G11C11/161 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.
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公开(公告)号：US20170271574A1
公开(公告)日：2017-09-21
申请号：US15266598
申请日：2016-09-15
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/08 , H01L43/10
摘要： A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.
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公开(公告)号：US20200161536A1
公开(公告)日：2020-05-21
申请号：US16684683
申请日：2019-11-15
发明人： Satoshi SHIROTORI , Yuichi OHSAWA , Hideyuki SUGIYAMA , Altansargai BUYANDALAI , Mariko SHIMIZU , Hiroaki YODA
IPC分类号： H01L43/02
摘要： According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.
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公开(公告)号：US20190035448A1
公开(公告)日：2019-01-31
申请号：US16146303
申请日：2018-09-28
发明人： Mariko SHIMIZU , Yuichi OHSAWA , Hideyuki SUGIYAMA , Satoshi SHIROTORI , Altansargai BUYANDALAI , Yushi KATO
CPC分类号： G11C11/165 , G11C11/161 , G11C11/1675 , G11C11/1697 , G11C11/18 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.
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公开(公告)号：US20180190336A1
公开(公告)日：2018-07-05
申请号：US15907714
申请日：2018-02-28
发明人： Satoshi SHIROTORI , Hiroaki YODA , Yuichi OHSAWA , Hideyuki SUGIYAMA , Mariko SHIMIZU , Altansargai BUYANDALAI , Naoharu SHIMOMURA
CPC分类号： G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.
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