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公开(公告)号：US20240233760A9
公开(公告)日：2024-07-11
申请号：US18359959
申请日：2023-07-27
CPC分类号： G11B5/3912 , G01R33/07
摘要： According to one embodiment, a magnetic sensor includes first to fourth shields, a first magnetic layer, first and second conductive layers, and first and second intermediate layer. The first magnetic layer is between the third shield and the fourth shield. The first magnetic layer includes a first face and a second face. The first face is between the first shield and the second face. The first conductive layer is provided between the third shield and the first magnetic layer. The second conductive layer is provided between the first magnetic layer and the fourth shield. The first intermediate layer is provided between the first shield and the first magnetic layer. The first intermediate layer includes a first intermediate layer face facing the first face. An area of the first intermediate layer face is smaller than an area of the first face.
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公开(公告)号：US20240135967A1
公开(公告)日：2024-04-25
申请号：US18359959
申请日：2023-07-26
CPC分类号： G11B5/3912 , G01R33/07
摘要： According to one embodiment, a magnetic sensor includes first to fourth shields, a first magnetic layer, first and second conductive layers, and first and second intermediate layer. The first magnetic layer is between the third shield and the fourth shield. The first magnetic layer includes a first face and a second face. The first face is between the first shield and the second face. The first conductive layer is provided between the third shield and the first magnetic layer. The second conductive layer is provided between the first magnetic layer and the fourth shield. The first intermediate layer is provided between the first shield and the first magnetic layer. The first intermediate layer includes a first intermediate layer face facing the first face. An area of the first intermediate layer face is smaller than an area of the first face.
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公开(公告)号：US20220120830A1
公开(公告)日：2022-04-21
申请号：US17395623
申请日：2021-08-06
摘要： According to one embodiment of the invention, a magnetic sensor includes a first element part. The first element part includes a first magnetic element, first and s second structures, a first magnetic member, and a second magnetic member. A direction from the first magnetic layer toward the first counter magnetic layer is along a first direction. The first structure includes a first side magnetic layer. The second structure includes a second side magnetic layer. The first magnetic element is between the first structure and the second structure in a second direction crossing the first direction. The first magnetic element is separated from the first side magnetic layer and the second side magnetic layer. A direction from the first side magnetic layer toward the first magnetic member is along the first direction. A direction from the second side magnetic layer toward the second magnetic member is along the first direction.
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公开(公告)号：US20190287589A1
公开(公告)日：2019-09-19
申请号：US16119003
申请日：2018-08-31
发明人： Altansargai BUYANDALAI , Satoshi SHIROTORI , Yuichi OHSAWA , Hideyuki SUGIYAMA , Mariko SHIMIZU , Hiroaki YODA , Katsuhiko KOUI
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.
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公开(公告)号：US20190088858A1
公开(公告)日：2019-03-21
申请号：US15905907
申请日：2018-02-27
发明人： Yuichi OHSAWA , Mariko SHIMIZU , Satoshi SHIROTORI , Hideyuki SUGIYAMA , Altansargai BUYANDALAI , Hiroaki YODA
摘要： According to one embodiment, a magnetic memory device includes a first conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second conductive layer, a third magnetic layer, a second nonmagnetic layer, a fourth magnetic layer provided, a first compound region, and a first insulating region. The first compound region includes the first metal and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first compound region is provided between the first conductive layer and the second conductive layer. The first insulating region includes at least one selected from the group consisting of Al and Si and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first insulating region is provided between the first magnetic layer and the third magnetic layer.
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公开(公告)号：US20190088297A1
公开(公告)日：2019-03-21
申请号：US16196663
申请日：2018-11-20
发明人： Yuichi OHSAWA , Hiroaki YODA , Altansargai BUYANDALAI , Satoshi SHIROTORI , Mariko SHIMIZU , Hideyuki SUGIYAMA , Yushi KATO
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
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公开(公告)号：US20180271395A1
公开(公告)日：2018-09-27
申请号：US15698372
申请日：2017-09-07
IPC分类号： A61B5/05 , A61B5/04 , G01N33/483
CPC分类号： A61B5/05 , A61B5/04 , A61B5/04008 , A61K49/00 , G01N27/72 , G01N33/4833 , H01S4/00
摘要： According to one embodiment, a magnetic sensor includes a first sensor element and a first interconnect. The first sensor element includes a first magnetic layer, a first opposing magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A first magnetization of the first magnetic layer is aligned with a first length direction crossing a first stacking direction from the first magnetic layer toward the first opposing magnetic layer. At least a portion of the first interconnect extends along the first length direction. The first interconnect cross direction crosses the first length direction and is from the first sensor element toward the portion of the first interconnect. A first electrical resistance of the first sensor element changes according to an alternating current flowing in the first interconnect and a sensed magnetic field applied to the first sensor element.
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公开(公告)号：US20180081001A1
公开(公告)日：2018-03-22
申请号：US15444820
申请日：2017-02-28
CPC分类号： G01R33/093 , A61B5/04007 , A61B5/04008 , A61B5/0444 , A61B5/0448 , A61B5/0476 , A61B5/055 , A61B5/6803 , A61B5/6814 , A61B5/6823 , A61B2562/0223 , G01R33/0029
摘要： In one embodiment, a first magnetoresistive effect element, a current supply unit and a detecting unit is provided. The first magnetoresistive effect element is provided between first and second electrodes and along a first direction which is a current flowing direction between the first and the second electrode. The first magnetoresistive effect element includes first and second magnetic layers and a first intermediate layer provided between the first and the second magnetic layer and along the first direction and a second direction orthogonal to the first direction. The current supply unit is connected to the first and the second electrode and can supply an alternating current. The detecting unit detects a second harmonic component of an alternating current voltage signal outputted from the first magnetoresistive effect element. A length of the first magnetoresistive effect element in the first direction is larger than a length in the second direction.
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公开(公告)号：US20170076769A1
公开(公告)日：2017-03-16
申请号：US15262139
申请日：2016-09-12
发明人： Satoshi SHIROTORI , Hiroaki YODA , Yuichi OHSAWA , Yuuzo KAMIGUCHI , Naoharu SHIMOMURA , Tadaomi DAIBOU , Tomoaki INOKUCHI
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L23/528 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
摘要翻译： 实施例的磁存储器包括：第一至第三端子; 包括第一磁性层，第二磁性层和第一非磁性层的磁阻元件; 包括第一至第三部分的第二非磁性层，第一部分位于第二和第三部分之间，第二和第三部分分别电连接到第二和第三端子，第一磁性层设置在第一部分之间 和第一非磁性层; 以及包括第四至第六部分的第三非磁性层，所述第四部分位于所述第一部分和所述第一磁性层之间，所述第五部分包括从所述磁阻元件延伸到所述第二端子的第一区域，所述第六部分包括第二部分， 区域从磁阻元件延伸到第三端子。
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公开(公告)号：US20130316088A1
公开(公告)日：2013-11-28
申请号：US13706157
申请日：2012-12-05
发明人： Norihito FUJITA , Shinobu SUGIMURA , Satoshi SHIROTORI , Tomohiko NAGATA , Akio HORI , Tomomi FUNAYAMA
IPC分类号： G11B5/84
CPC分类号： G11B5/84 , G11B5/1278 , G11B5/3116 , G11B5/3163 , G11B2005/0021
摘要： According to one embodiment, a magnetic recording head manufacturing method characterized by includes processes of forming a main pole, forming, on the main pole, an insulating layer having a gap for forming a spin torque oscillator, forming a spin torque oscillator in the gap, and forming an auxiliary magnetic pole on the spin torque oscillator is provided.
摘要翻译： 根据一个实施例，一种磁记录头制造方法，其特征在于包括：形成主极，在主极上形成具有用于形成自旋扭矩振荡器的间隙的绝缘层，在间隙中形成自旋转矩振荡器的工艺， 并且在自旋转矩振荡器上形成辅助磁极。
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