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    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    3.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20150014756A1

    公开(公告)日：2015-01-15

    申请号：US14504140

    申请日：2014-10-01

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Tadaomi DAIBOU ,  Minoru AMANO ,  Daisuke SAIDA ,  Junichi ITO ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Hiroaki YODA

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

    CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE EFFECT ELEMENT
    4.
    发明申请
    MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE EFFECT ELEMENT 审中-公开
    磁阻效应元件的制造方法和磁阻效应元件的制造设备

    公开(公告)号：US20140087483A1

    公开(公告)日：2014-03-27

    申请号：US13847069

    申请日：2013-03-19

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yuichi OHSAWA ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Naoki Tamaoki

    IPC: H01L43/12

    CPC classification number: H01L43/12 ,  H01J37/08 ,  H01J37/3053 ,  H01J37/3056 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.

    Abstract translation: 根据一个实施例，磁阻效应元件的制造方法包括在基板上形成叠层结构，层压结构包括具有可变磁化方向的第一磁性层，具有不变磁化方向的第二磁性层， 在第一和第二磁性层之间形成磁性层，在叠层结构上形成具有预定平面形状的第一掩模层，并且通过使用在基板的中心处具有立体角的离子束来处理基于第一掩模层的层叠结构 是10°以上。

    MAGNETIC MEMORY DEVICE
    5.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20200161536A1

    公开(公告)日：2020-05-21

    申请号：US16684683

    申请日：2019-11-15

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Satoshi SHIROTORI ,  Yuichi OHSAWA ,  Hideyuki SUGIYAMA ,  Altansargai BUYANDALAI ,  Mariko SHIMIZU ,  Hiroaki YODA

    IPC: H01L43/02

    Abstract: According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.

    MAGNETIC MEMORY DEVICE
    6.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20190035448A1

    公开(公告)日：2019-01-31

    申请号：US16146303

    申请日：2018-09-28

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Mariko SHIMIZU ,  Yuichi OHSAWA ,  Hideyuki SUGIYAMA ,  Satoshi SHIROTORI ,  Altansargai BUYANDALAI ,  Yushi KATO

    IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

    CPC classification number: G11C11/165 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1697 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08

    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.

    MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY
    8.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY 审中-公开
    电磁效应元件，磁阻效应元件的制造方法和磁记忆

    公开(公告)号：US20160197268A1

    公开(公告)日：2016-07-07

    申请号：US15068062

    申请日：2016-03-11

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Megumi YAKABE ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Junichi ITO ,  Eiji KITAGAWA

    IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an intermediate layer between the first magnetic layer and the second magnetic layer; and a sidewall layer having a laminated structure on a side face of the first magnetic layer. The sidewall layer includes a first layer disposed on the side face of the first magnetic layer and including a first element having an atomic number larger than an atomic number of the first magnetic element, and a second layer including a second element having an atomic number smaller than the atomic number of the first atomic element. The first layer is disposed between the first magnetic layer and the second layer.

    Abstract translation: 根据一个实施例，磁阻效应元件包括包括第一磁性元件的第一磁性层; 第二磁性层; 第一磁性层和第二磁性层之间的中间层; 以及在第一磁性层的侧面上具有层叠结构的侧壁层。 侧壁层包括设置在第一磁性层的侧面上的第一层，并且包括具有比第一磁性元件的原子序数大的原子序数的第一元素，以及包含原子序数较小的第二元素的第二层 比第一个原子元素的原子序数。 第一层设置在第一磁性层和第二层之间。

    MAGNETIC MEMORY DEVICE
    9.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20190280189A1

    公开(公告)日：2019-09-12

    申请号：US16423805

    申请日：2019-05-28

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Altansargai BUYANDALAI ,  Satoshi SHIROTORI ,  Yuichi OHSAWA ,  Hideyuki SUGIYAMA ,  Mariko SHIMIZU ,  Hiroaki YODA ,  Tomoaki INOKUCHI

    IPC: H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

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